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    ESC substrate support with chucking force control
    3.
    发明授权
    ESC substrate support with chucking force control 有权

    公开(公告)号：US11114327B2

    公开(公告)日：2021-09-07

    申请号：US16105731

    申请日：2018-08-20

    Applicant: Applied Materials, Inc.

    Inventor： Wendell Glenn Boyd, Jr. ,  Jim Zhongyi He ,  Zhenwen Ding

    IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  C23C14/50

    Abstract: Embodiments described herein provide methods and apparatus used to reduce or substantially eliminate undesirable scratches to the non-active surface of a substrate by monitoring and controlling the deflection of a substrate, and thus the contact force between the substrate and a substrate support, during substrate processing. In one embodiment a method for processing a substrate includes positioning the substrate on a patterned surface of a substrate support, where the substrate support is disposed in a processing volume of a processing chamber, applying a chucking voltage to a chucking electrode disposed in the substrate support; flowing a gas into a backside volume disposed between the substrate and the substrate support, monitoring a deflection of the substrate, and changing a chucking parameter based on the deflection of the substrate.

    Cleaning method
    6.
    发明授权
    Cleaning method 有权

    公开(公告)号：US10861693B2

    公开(公告)日：2020-12-08

    申请号：US15375683

    申请日：2016-12-12

    Applicant: Applied Materials, Inc.

    Inventor： Peter Stone ,  Christopher S. Olsen ,  Teng-fang Kuo ,  Ping Han Hsieh ,  Zhenwen Ding

    IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  H01L21/322 ,  H01L21/311

    Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

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