APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE
    1.
    发明申请
    APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SUBSTRATE 审中-公开
    用于控制基板温度均匀性的装置

    公开(公告)号:US20160169593A1

    公开(公告)日:2016-06-16

    申请号:US15050419

    申请日:2016-02-22

    CPC classification number: F28F3/12 F28F2013/001

    Abstract: Apparatus for controlling the thermal uniformity of a substrate are provided. The thermal uniformity of the substrate may be controlled to be more uniform or the thermal uniformity of the substrate may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling the thermal uniformity of a substrate includes: a substrate support having a support surface to support a substrate thereon; and a flow path disposed within the substrate support to flow a heat transfer fluid beneath the support surface, wherein the flow path comprises a first portion and a second portion, each portion having a substantially equivalent axial length, wherein the first portion is spaced about 2 mm to about 10 mm from the second portion, and wherein the first portion provides a flow of heat transfer fluid in a direction opposite a flow of heat transfer fluid of the second portion.

    Abstract translation: 提供了用于控制基板的热均匀性的装置。 可以将基板的热均匀性控制得更均匀,或者基板的热均匀性可以被控制为在所需图案中不均匀。 在一些实施例中,用于控制衬底的热均匀性的装置包括:衬底支撑件,其具有用于在其上支撑衬底的支撑表面; 以及设置在所述基板支撑件内的流动路径,以使传热流体在所述支撑表面下方流动,其中所述流动路径包括第一部分和第二部分,每个部分具有基本相当的轴向长度,其中所述第一部分间隔开约2 从第二部分到约10mm,并且其中第一部分在与第二部分的传热流体的流动相反的方向上提供传热流体的流动。

    MULTI-SUBSTRATE THERMAL MANAGEMENT APPARATUS
    2.
    发明申请
    MULTI-SUBSTRATE THERMAL MANAGEMENT APPARATUS 有权
    多基板热管理装置

    公开(公告)号:US20160033205A1

    公开(公告)日:2016-02-04

    申请号:US14504021

    申请日:2014-10-01

    CPC classification number: F28F3/12 H01L21/67109 H01L21/67303

    Abstract: Embodiments of multi-substrate thermal management apparatus are provided herein. In some embodiments, a multi-substrate thermal management apparatus includes a plurality of plates vertically arranged above one another; a plurality of channels extending through each of the plurality of plates; a supply manifold including a supply channel coupled to the plurality of plates at first locations; and a return manifold including a return channel coupled to the plurality of plates via a plurality of legs at second locations, wherein the supply and return channels are fluidly coupled to the plurality of channels to flow a heat transfer fluid through the plurality of plates.

    Abstract translation: 本发明提供了多基板热管理装置的实施例。 在一些实施例中,多基板热管理装置包括彼此垂直布置的多个板; 多个通道,其延伸穿过所述多个板中的每一个; 供应歧管,其包括在第一位置处联接到所述多个板的供应通道; 以及返回歧管,其包括在第二位置处经由多个腿联接到所述多个板的返回通道,其中所述供应和返回通道流体地联接到所述多个通道以使传热流体流过所述多个板。

    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL
    3.
    发明申请
    PLASMA REACTOR WITH CHAMBER WALL TEMPERATURE CONTROL 审中-公开
    具有室壁温度控制的等离子体反应器

    公开(公告)号:US20130105085A1

    公开(公告)日:2013-05-02

    申请号:US13647574

    申请日:2012-10-09

    CPC classification number: H01L21/20 H01J37/32522 H01L21/30604

    Abstract: Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a first conductive body disposed about a substrate support in the inner volume of a process chamber; a first conductive ring having an inner edge coupled to a first end of the second conductive body and having an outer edge disposed radially outward of the inner edge; a second conductive body coupled to the outer edge of the first conductive ring and having at least a portion disposed above the first conductive ring, wherein the first conductive ring and the at least a portion of the second conductive body partially define a first region above the first conductive ring; and a heater configured to heat the first conductive body, the second conductive body, and the first conductive ring.

    Abstract translation: 本文提供了处理基板的设备。 在一些实施例中,一种装置包括:第一导电体,其布置在处理室的内部体积中的基板支撑件周围; 第一导电环,其具有耦合到所述第二导电体的第一端的内边缘,并且具有设置在所述内边缘的径向外侧的外边缘; 耦合到所述第一导电环的所述外边缘并且具有设置在所述第一导电环上方的至少一部分的第二导电体,其中所述第一导电环和所述第二导电体的所述至少一部分部分地限定所述第一导电环上方的第一区域 第一导电环; 以及加热器,被配置为加热第一导电体,第二导​​电体和第一导电环。

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