公开(公告)号：US11276590B2

公开(公告)日：2022-03-15

申请号：US15597949

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US20200328098A1

公开(公告)日：2020-10-15

申请号：US16915749

申请日：2020-06-29

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  B01F5/00 ,  H01L21/311

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US10760161B2

公开(公告)日：2020-09-01

申请号：US14584441

申请日：2014-12-29

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Mehmet Tugrul Samir ,  Aaron Miller

IPC: C23C16/455 ,  F16L41/02 ,  C30B25/14 ,  C30B31/16 ,  H01J37/32 ,  C30B25/16

Abstract: Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.

公开(公告)号：US10577690B2

公开(公告)日：2020-03-03

申请号：US15492928

申请日：2017-04-20

Applicant: Applied Materials, Inc.

Inventor： Anh N. Nguyen ,  Dmitry Lubomirsky ,  Mehmet Tugrul Samir

IPC: H01J37/00 ,  C23C16/455

Abstract: Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

公开(公告)号：US20190311883A1

公开(公告)日：2019-10-10

申请号：US16448305

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US20190252216A1

公开(公告)日：2019-08-15

申请号：US15897860

申请日：2018-02-15

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang

IPC: H01L21/67 ,  H01L21/311 ,  B01F5/00

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

公开(公告)号：US20140261185A1

公开(公告)日：2014-09-18

申请号：US13846355

申请日：2013-03-18

Applicant: Applied Materials, Inc.

Inventor： STEVE ABOAGYE ,  Paul Brillhart ,  Surajit Kumar ,  Anzhong Chang ,  Satheesh Kuppurao ,  Mehmet Tugrul Samir ,  David K. Carlson

IPC: C23C16/455

CPC classification number: C23C16/45502 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45563 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/481

Abstract: Embodiments described herein relate to a base ring assembly for use in a substrate processing chamber. In one embodiment, the base ring assembly comprises a ring body sized to be received within an inner circumference of the substrate processing chamber, the ring body comprising a loading port for passage of the substrate, a gas inlet, and a gas outlet, wherein the gas inlet and the gas outlet are disposed at opposing ends of the ring body, and an upper ring configured to dispose on a top surface of the ring body, and a lower ring configured to dispose on a bottom surface of the ring body, wherein the upper ring, the lower ring, and the ring body, once assembled, are generally concentric or coaxial.

Abstract translation: 本文所述的实施例涉及用于衬底处理室中的基座环组件。 在一个实施例中，基环组件包括尺寸适于容纳在基板处理室的内圆周内的环体，环体包括用于通过基板的装载口，气体入口和气体出口，其中， 气体入口和气体出口设置在环体的相对端，并且配置成设置在环体的顶表面上的上环和被配置为设置在环体的底表面上的下环，其中， 一旦组装，上环，下环和环体大致同心或同轴。

公开(公告)号：US11361939B2

公开(公告)日：2022-06-14

申请号：US16448305

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32 ,  C23C16/455

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11276559B2

公开(公告)日：2022-03-15

申请号：US15597973

申请日：2017-05-17

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC: H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US10923386B2

公开(公告)日：2021-02-16

申请号：US14969444

申请日：2015-12-15

Applicant: Applied Materials, Inc.

Inventor： Mehmet Tugrul Samir

IPC: H01L21/687 ,  C23C16/455 ,  H01L21/67 ,  C23C16/50 ,  C23C16/458 ,  C23C16/48 ,  C23C16/44

Abstract: Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a gas distributor around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central opening and a plurality of substrate locations distributed around the central opening, a pumping port below the substrate support, and an energy source coupled to the top or the bottom. The energy source may be a radiant source, a thermal source, a UV source, or a plasma source. The substrate support may be rotated using a magnetic rotator and an air bearing. The gas distributor may have a plurality of passages distributed around a circumference of the gas distributor.