公开(公告)号：US11361939B2

公开(公告)日：2022-06-14

申请号：US16448305

申请日：2019-06-21

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01J37/32 ,  C23C16/455

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11276559B2

公开(公告)日：2022-03-15

申请号：US15597973

申请日：2017-05-17

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01J37/32

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US12002659B2

公开(公告)日：2024-06-04

申请号：US17869987

申请日：2022-07-21

申请人： Applied Materials, Inc.

发明人： Tae Seung Cho ,  David Michael Benjaminson ,  Kenneth Schatz ,  Ryan Michael Pakulski ,  Martin Yue Choy ,  Pratheep Gunaseelan ,  Chih-Yung Huang

IPC分类号： H01J37/30 ,  H01J37/32

CPC分类号： H01J37/32596 ,  H01J37/32357 ,  H01J37/3244

摘要： A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.

公开(公告)号：US10522371B2

公开(公告)日：2019-12-31

申请号：US15159478

申请日：2016-05-19

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC分类号： H01L21/67 ,  H01J37/32 ,  H01L21/3065

摘要： Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US20180337057A1

公开(公告)日：2018-11-22

申请号：US15597973

申请日：2017-05-17

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01L21/3065 ,  H01L21/67 ,  H01J37/32

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US11735441B2

公开(公告)日：2023-08-22

申请号：US16707379

申请日：2019-12-09

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC分类号： H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/324

CPC分类号： H01L21/67069 ,  H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/6719 ,  H01L21/67109 ,  H01J2237/334

摘要： Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US11276590B2

公开(公告)日：2022-03-15

申请号：US15597949

申请日：2017-05-17

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01L21/67 ,  H01L21/687 ,  H01J37/32

摘要： Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

公开(公告)号：US20190311883A1

公开(公告)日：2019-10-10

申请号：US16448305

申请日：2019-06-21

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01J37/32

摘要： Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

公开(公告)号：US20170338134A1

公开(公告)日：2017-11-23

申请号：US15159530

申请日：2016-05-19

申请人： Applied Materials, Inc.

发明人： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC分类号： H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/324

CPC分类号： H01L21/67069 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/6719

摘要： Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US11915950B2

公开(公告)日：2024-02-27

申请号：US17583935

申请日：2022-01-25

申请人： Applied Materials, Inc.

发明人： Mehmet Tugrul Samir ,  Dongqing Yang ,  Dmitry Lubomirsky ,  Peter Hillman ,  Soonam Park ,  Martin Yue Choy ,  Lala Zhu

IPC分类号： H01L21/67 ,  H01L21/687 ,  H01J37/32

CPC分类号： H01L21/67103 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68735 ,  H01L21/68757 ,  H01L21/68785 ,  H01J2237/002 ,  H01J2237/332

摘要： Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.