公开(公告)号：US20160372371A1

公开(公告)日：2016-12-22

申请号：US15189768

申请日：2016-06-22

Applicant: Applied Materials, Inc.

Inventor： Kaushal K. SINGH ,  Er-Xuan PING ,  Xianmin TANG ,  Sundar RAMAMURTHY ,  Randhir THAKUR

IPC: H01L21/768

CPC classification number: H01L21/28518 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53219

Abstract: Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.

Abstract translation: 本文所述的实施方案一般涉及形成硅化物材料的方法。 根据本文所述的实施方案形成的硅化物材料可以用作接触和/或互连结构，并且可以提供优于常规硅化物形成方法的优点。 在一个实施例中，一个或多个过渡金属和铝层可以沉积在含硅衬底上，并且过渡金属层可以沉积在一个或多个过渡金属和铝层上。 可以进行退火工艺以形成金属硅化物材料。

公开(公告)号：US20140271097A1

公开(公告)日：2014-09-18

申请号：US14188344

申请日：2014-02-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Anchuan WANG ,  Xinglong CHEN ,  Zihui LI ,  Hiroshi HAMANA ,  Zhijun CHEN ,  Ching-Mei HSU ,  Jiayin HUANG ,  Nitin K. INGLE ,  Dmitry LUBOMIRSKY ,  Shankar VENKATARAMAN ,  Randhir THAKUR

IPC: H01L21/677

CPC classification number: H01L21/324 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  H01L21/02041 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/263 ,  H01L21/2686 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/67703 ,  H01L21/67739 ,  H01L21/67742 ,  H01L21/6831

Abstract: Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional processing capabilities in combination chamber designs. The methods may provide for the limiting, prevention, and correction of aging defects that may be caused as a result of etching processes performed by system tools.

Abstract translation: 提供系统，室和过程以控制由水分污染引起的过程缺陷。 这些系统可以提供腔室的配置，以在真空或受控环境中执行多个操作。 腔室可以包括在组合腔室设计中提供附加处理能力的构造。 这些方法可以提供由系统工具执行的蚀刻工艺可能引起的老化缺陷的限制，预防和校正。