公开(公告)号：US20170200590A1

公开(公告)日：2017-07-13

申请号：US15397429

申请日：2017-01-03

Applicant: Applied Materials, Inc.

Inventor： Chirantha RODRIGO ,  Jingchun ZHANG ,  Lili JI ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32862 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  Y10S438/905

Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

公开(公告)号：US20230096309A1

公开(公告)日：2023-03-30

申请号：US17486631

申请日：2021-09-27

Applicant: Applied Materials, Inc.

Inventor： Chang Seok KANG ,  Tomohiko KITAJIMA ,  Sung-Kwan KANG ,  Fredrick FISHBURN ,  Gill Yong LEE ,  Nitin K. INGLE

IPC: H01L27/108

Abstract: Examples herein relate to three-dimensional (3D) dynamic random access memory (DRAM) and corresponding methods. In an example, a film stack is formed on a substrate. The film stack includes multiple unit stacks, each having, sequentially, a first dielectric layer, a semiconductor layer, and a second dielectric layer. A first opening is formed through the film stack. The second dielectric layer is pulled back from the first opening forming a first lateral recess. A gate structure is formed in the first lateral recess and disposed on a portion of the semiconductor layer. A second opening, laterally disposed from where the first opening was formed, is formed through the film stack. The portion of the semiconductor layer is pulled back from the second opening forming a second lateral recess. A capacitor is formed in a region where the second lateral recess was disposed and contacting the portion of the semiconductor layer.

公开(公告)号：US20150206764A1

公开(公告)日：2015-07-23

申请号：US14157724

申请日：2014-01-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Xikun WANG ,  Lin XU ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/311

CPC classification number: H01L21/31122 ,  H01J37/32357 ,  H01L21/0337

Abstract: Methods of selectively etching titanium oxide relative to silicon oxide, silicon nitride and/or other dielectrics are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and/or a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium oxide. The plasmas effluents react with exposed surfaces and selectively remove titanium oxide while very slowly removing other exposed materials. A direction sputtering pretreatment is performed prior to the remote plasma etch and enables an increased selectivity as well as a directional selectivity. In some embodiments, the titanium oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Abstract translation: 描述了相对于氧化硅，氮化硅和/或其它电介质来选择性地蚀刻氧化钛的方法。 所述方法包括使用由含氟前体和/或含氯前体形成的等离子体流出物的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入基板处理区域，其中等离子体流出物与氧化钛反应。 等离子体流出物与暴露的表面反应并选择性地去除氧化钛，同时非常缓慢地除去其它暴露的材料。 在远程等离子体蚀刻之前执行方向溅射预处理，并且能够提高选择性以及方向选择性。 在一些实施方案中，钛氧化物蚀刻选择性部分地来自位于远程等离子体和基板处理区域之间的离子抑制元件的存在。

公开(公告)号：US20170229313A1

公开(公告)日：2017-08-10

申请号：US15496907

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065 ,  C30B33/12

CPC classification number: H01L21/3065 ,  C09K13/06 ,  C30B33/12 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20170178915A1

公开(公告)日：2017-06-22

申请号：US15043955

申请日：2016-02-15

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20220341042A1

公开(公告)日：2022-10-27

申请号：US17861750

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Adib KHAN ,  Shankar VENKATARAMAN ,  Jay D. PINSON, II ,  Jang-Gyoo YANG ,  Nitin K. INGLE ,  Qiwei LIANG

IPC: C23C16/56 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  H01L21/02 ,  H01L21/677 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments of the present disclosure generally relate to a batch processing chamber that is adapted to simultaneously cure multiple substrates at one time. The batch processing chamber includes multiple processing sub-regions that are each independently temperature controlled. The batch processing chamber may include a first and a second sub-processing region that are each serviced by a substrate transport device external to the batch processing chamber. In addition, a slotted cover mounted on the loading opening of the batch curing chamber reduces the effect of ambient air entering the chamber during loading and unloading.

公开(公告)号：US20180082849A1

公开(公告)日：2018-03-22

申请号：US15823083

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Nitin K. INGLE ,  Anchuan WANG ,  Zihui LI ,  Mikhail KOROLIK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a silicon material disposed on a substrate.

公开(公告)号：US20170291199A1

公开(公告)日：2017-10-12

申请号：US15485105

申请日：2017-04-11

Applicant: Applied Materials, Inc.

Inventor： Xing ZHONG ,  Zhijun CHEN ,  Zhenjiang CUI ,  Nitin K. INGLE

IPC: B08B5/00 ,  H01L21/02

CPC classification number: H01L21/02057 ,  H01L21/76224

Abstract: A method for removing halogen from a surface of a substrate is described herein. The method described herein includes flowing oxygen gas and an inert gas such as nitrogen gas into a RPS. The gases in the RPS are energized to form oxygen radicals and nitrogen radicals. The oxygen and nitrogen radicals are used to remove halogen content on the surface of the substrate. The chamber pressure of the halogen content removal process is very low, ranging from about 50 mTorr to about 100 mTorr. By using oxygen gas and an inert gas and with a low chamber pressure, the halogen content on the surface of the substrate is reduced while keeping the oxidation level of the surface of the substrate to at most 10 Angstroms.

公开(公告)号：US20170133232A1

公开(公告)日：2017-05-11

申请号：US14961495

申请日：2015-12-07

Applicant: Applied Materials, Inc.

Inventor： Zihui LI ,  Xing ZHONG ,  Anchuan WANG ,  Nitin K. INGLE

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/32137

Abstract: The present disclosure provides methods for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including chlorine containing gas to remove a silicon material disposed on a substrate.

公开(公告)号：US20240290612A1

公开(公告)日：2024-08-29

申请号：US18409549

申请日：2024-01-10

Applicant: Applied Materials, Inc.

Inventor： Zeqing SHEN ,  Supriya GHOSH ,  Susmit Singha ROY ,  Abhijit Basu MALLICK ,  Nitin K. INGLE

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56

CPC classification number: H01L21/0217 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02247 ,  H01L21/02271

Abstract: The present disclosure generally relates to methods for forming silicon nitride film layers on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber, depositing a first silicon film layer on a non-silicon oxide surface of the substrate for a time duration of about 1 to about minutes, nitriding the first silicon film layer to form a first silicon nitride film layer on the substrate, selectively depositing a second silicon film layer on the first silicon nitride film layer, and nitriding the second silicon film layer to form a second silicon nitride film layer disposed directly on the first silicon nitride film layer.