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    METHOD AND APPARATUS FOR BACKSIDE CLEANING OF SUBSTRATES
    2.
    发明申请
    METHOD AND APPARATUS FOR BACKSIDE CLEANING OF SUBSTRATES 有权
    背衬清洗方法和装置

    公开(公告)号：US20160151808A1

    公开(公告)日：2016-06-02

    申请号：US14556085

    申请日：2014-11-28

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  JEN SERN LEW ,  ARVIND SUNDARRAJAN ,  SRINIVAS D. NEMANI

    IPC: B08B5/02 ,  B08B6/00

    CPC classification number: B08B5/02 ,  B08B6/00 ,  H01L21/67028 ,  H01L21/6831 ,  H01L21/6838

    Abstract: Embodiments of methods and apparatus for removing particles from a surface of a substrate, such as from the backside of the substrate, are provided herein. In some embodiments, an apparatus for removing particles from a surface of a substrate includes: a substrate handler to expose the surface of the substrate; a particle separator to separate particles from the exposed surface of the substrate; a particle transporter to transport the separated particles; and a particle collector to collect the transported particles.

    Abstract translation: 本文提供了用于从衬底的表面（例如从衬底的背面）去除颗粒的方法和设备的实施例。 在一些实施例中，用于从衬底的表面去除颗粒的设备包括：衬底处理器，用于暴露衬底的表面; 颗粒分离器，用于从基板的暴露表面分离颗粒; 用于输送分离的颗粒的颗粒转运体; 和用于收集被输送的颗粒的颗粒收集器。

    SUBSTRATE TRANSFER CHAMBER
    3.
    发明申请
    SUBSTRATE TRANSFER CHAMBER 审中-公开
    基板传送室

    公开(公告)号：US20160133494A1

    公开(公告)日：2016-05-12

    申请号：US14933635

    申请日：2015-11-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  ENG SHENG PEH ,  SRINIVAS D. NEMANI ,  ARVIND SUNDARRAJAN ,  AVINASH AVULA ,  ELLIE Y. YIEH

    IPC: H01L21/677 ,  H01L21/673 ,  B25J11/00

    CPC classification number: H01L21/67778 ,  H01L21/67201 ,  H01L21/67369 ,  H01L21/67373 ,  H01L21/67379 ,  H01L21/67389

    Abstract: Embodiments of substrate transfer chambers are provided herein. In some embodiments, a substrate transfer chamber includes a body having an interior volume, wherein a bottom portion of the body includes a first opening; an adapter plate coupled to the bottom portion of the body to couple the substrate transfer chamber to a load lock chamber of a substrate processing system; wherein the adapter plate includes a second opening aligned with the first opening to fluidly couple the interior volume with an inner volume of the load lock chamber; a cassette support disposed in the interior volume to support a substrate cassette; and a lift actuator coupled to the cassette support to lower or raise the substrate cassette into or out of the load lock chamber.

    Abstract translation: 本文提供了基板传送室的实施例。 在一些实施例中，衬底传送室包括具有内部容积的主体，其中主体的底部包括第一开口; 耦合到所述主体的底部的适配器板，以将所述衬底传送室耦合到衬底处理系统的负载锁定室; 其中所述适配器板包括与所述第一开口对准的第二开口，以将所述内部容积与所述负载锁定室的内部容积流体连接; 设置在所述内部容积中以支撑衬底盒的盒支架; 以及联接到所述盒支撑件的升降致动器，以将所述基板盒降低或升高到所述负载锁定室中或从所述负载锁定室中升起。

    MULTI-CASSETTE CARRYING CASE
    4.
    发明申请
    MULTI-CASSETTE CARRYING CASE 审中-公开
    多箱运输箱

    公开(公告)号：US20160133491A1

    公开(公告)日：2016-05-12

    申请号：US14933651

    申请日：2015-11-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  ENG SHENG PEH ,  SRINIVAS D. NEMANI ,  ARVIND SUNDARRAJAN ,  AVINASH AVULA ,  ELLIE Y. YIEH ,  MICHAEL RICE ,  GINETTO ADDIEGO

    IPC: H01L21/673 ,  B25J11/00

    Abstract: Embodiments of multi-cassette carrying cases are provided herein. In some embodiments a multi-cassette carrying case includes: a body having an inner volume; a door coupled to the body to selectively seal off the inner volume; and a plurality of cassette holders disposed in the inner volume to hold one or more substrate cassettes. In some embodiments, a method of transferring substrates includes: placing a substrate in a substrate cassette, wherein an inner volume of the substrate cassette is sealed from an environment outside of the substrate cassette; and placing the substrate cassette in a multi-cassette carrying case.

    Abstract translation: 这里提供了多盒式携带箱的实施例。 在一些实施例中，多卡带手提箱包括：具有内部容积的主体; 一个门连接到主体以选择性地密封内部容积; 以及设置在所述内部容积中以容纳一个或多个衬底盒的多个盒座。 在一些实施例中，传送衬底的方法包括：将衬底放置在衬底盒中，其中衬底盒的内部体积与衬底盒外的环境密封; 并将衬底盒放置在多盒式手提箱中。

    METHODS AND APPARATUS FOR TRANSFERRING A SUBSTRATE
    7.
    发明申请
    METHODS AND APPARATUS FOR TRANSFERRING A SUBSTRATE 审中-公开
    用于传输基板的方法和装置

    公开(公告)号：US20160133490A1

    公开(公告)日：2016-05-12

    申请号：US14933628

    申请日：2015-11-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SRISKANTHARAJAH THIRUNAVUKARASU ,  ENG SHENG PEH ,  SRINIVAS D. NEMANI ,  ARVIND SUNDARRAJAN ,  AVINASH AVULA ,  ELLIE Y. YIEH

    IPC: H01L21/673 ,  H01L21/677

    CPC classification number: H01L21/67373 ,  H01L21/67201 ,  H01L21/67369 ,  H01L21/67376 ,  H01L21/67379

    Abstract: Embodiments method and apparatus for transferring a substrate are provided herein. In some embodiments, a substrate cassette includes a body having an upper portion and a lower portion, the upper portion and the lower portion defining an interior volume when the upper portion is coupled to the lower portion; a locking mechanism moveable between a locked position, in which the upper and lower portions are coupled, and an unlocked position, in which the lower portion can be separated from the upper portion; and a load distribution plate coupled to an upper surface of the upper portion along an edge of the upper portion to distribute a load applied to the load distribution plate.

    Abstract translation: 本发明提供了用于转移基板的实施例的方法和装置。 在一些实施例中，衬底盒包括具有上部和下部的主体，当上部联接到下部时，上部和下部限定内部容积; 锁定机构，其能够在上部和下部结合的锁定位置和解锁位置之间移动，其中下部可以与上部分离; 以及负载分配板，其沿着所述上部的边缘联接到所述上部的上表面，以分配施加到所述负载分配板的负载。

    METHODS FOR ETCHING SILICON USING HYDROGEN RADICALS IN A HOT WIRE CHEMICAL VAPOR DEPOSITION CHAMBER
    8.
    发明申请
    METHODS FOR ETCHING SILICON USING HYDROGEN RADICALS IN A HOT WIRE CHEMICAL VAPOR DEPOSITION CHAMBER 有权
    在热线化学气相沉积室中使用氢化物​​进行硅蚀刻的方法

    公开(公告)号：US20150126041A1

    公开(公告)日：2015-05-07

    申请号：US14533389

    申请日：2014-11-05

    Applicant: APPLIED MATERIALS, INC.

    Inventor： SUKTI CHATTERJEE ,  SRINIVAS D. NEMANI

    IPC: H01L21/3065

    CPC classification number: H01L21/3065 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/02532 ,  H01L21/30621 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67207

    Abstract: Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition process are provided herein. In some embodiments, a method of processing a substrate having a crystalline silicon layer atop the substrate and a patterned masking layer atop the crystalline silicon layer exposing portions of the crystalline silicon layer; the method may include (a) exposing the substrate to a plasma formed from an inert gas wherein ions from the plasma amorphize a first part of the exposed portions of the crystalline silicon layer; and (b) exposing the substrate to hydrogen radicals generated from a process gas comprising a hydrogen-containing gas in a hot wire chemical vapor deposition (HWCVD) process chamber to etch the amorphized first part of the exposed portion of the crystalline silicon layer.

    Abstract translation: 本文提供了在热线化学气相沉积工艺中使用氢自由基蚀刻硅的方法。 在一些实施例中，一种处理在衬底上方具有晶体硅层的衬底的方法以及暴露晶体硅层部分的晶体硅层顶部的图案化掩模层; 该方法可以包括（a）将衬底暴露于由惰性气体形成的等离子体，其中来自等离子体的离子将晶体硅层的暴露部分的第一部分非晶化; 和（b）将基底暴露于在热线化学气相沉积（HWCVD）处理室中由包含含氢气体的工艺气体产生的氢自由基，以蚀刻晶体硅层的暴露部分的非晶化第一部分。

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