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    RADIO FREQUENCY GROUND SYSTEM AND METHOD
    1.
    发明申请
    RADIO FREQUENCY GROUND SYSTEM AND METHOD 有权

    公开(公告)号：US20210391147A1

    公开(公告)日：2021-12-16

    申请号：US16898650

    申请日：2020-06-11

    Applicant: Applied Materials, Inc.

    Inventor： Gaosheng FU ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

    IPC: H01J37/32 ,  H05H1/46

    Abstract: The present disclosure provides an apparatus including a chamber body and a lid defining a volume therein. The apparatus includes a substrate support disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem, and a ground plate disposed between the support body and the stem. A top flange is coupled to a lower peripheral surface the ground plate and a bottom flange is coupled to a bottom of the chamber body. The bottom flange and the top flange is coupled to one another with a plurality of straps, each of the straps having a first end coupled to the bottom flange and a second end coupled to the top flange.

    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES
    2.
    发明申请
    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES 审中-公开

    公开(公告)号：US20190100839A1

    公开(公告)日：2019-04-04

    申请号：US16192228

    申请日：2018-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

    ISOLATOR APPARATUS AND METHODS FOR SUBSTRATE PROCESSING CHAMBERS
    4.
    发明申请
    ISOLATOR APPARATUS AND METHODS FOR SUBSTRATE PROCESSING CHAMBERS 有权

    公开(公告)号：US20230047451A1

    公开(公告)日：2023-02-16

    申请号：US17974408

    申请日：2022-10-26

    Applicant: Applied Materials, Inc.

    Inventor： Nitin PATHAK ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Thomas RUBIO ,  Badri N. RAMAMURTHI ,  Juan Carlos ROCHA-ALVAREZ

    IPC: C23C16/458 ,  C23C16/455 ,  C23C16/44

    Abstract: Aspects of the present disclosure relate generally to isolator devices, components thereof, and methods associated therewith for substrate processing chambers. In one implementation, a substrate processing chamber includes an isolator ring disposed between a pedestal and a pumping liner. The isolator ring includes a first surface that faces the pedestal, the first surface being disposed at a gap from an outer circumferential surface of the pedestal. The isolator ring also includes a second surface that faces the pumping liner and a protrusion that protrudes from the first surface of the isolator ring and towards the outer circumferential surface of the pedestal. The protrusion defines a necked portion of the gap between the pedestal and the isolator ring.

    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES
    5.
    发明申请
    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES 审中-公开

    公开(公告)号：US20200263301A1

    公开(公告)日：2020-08-20

    申请号：US16867307

    申请日：2020-05-05

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and an underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

    EXTERNAL SUBSTRATE SYSTEM ROTATION IN A SEMICONDUCTOR PROCESSING SYSTEM
    6.
    发明申请
    EXTERNAL SUBSTRATE SYSTEM ROTATION IN A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开

    公开(公告)号：US20200035522A1

    公开(公告)日：2020-01-30

    申请号：US16588959

    申请日：2019-09-30

    Applicant: Applied Materials, Inc.

    Inventor： Tuan Anh NGUYEN ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

    IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02

    Abstract: A method and apparatus for processing a semiconductor is disclosed herein. In one embodiment, a processing system for semiconductor processing is disclosed. The processing chamber includes two transfer chambers, a processing chamber, and a rotation module. The processing chamber is coupled to the transfer chamber. The rotation module is positioned between the transfer chambers. The rotation module is configured to rotate the substrate. The transfer chambers are configured to transfer the substrate between the processing chamber and the transfer chamber. In another embodiment, a method for processing a substrate on the apparatus is disclosed herein.

    HIGH TEMPERATURE FACE PLATE FOR DEPOSITION APPLICATION
    7.
    发明申请
    HIGH TEMPERATURE FACE PLATE FOR DEPOSITION APPLICATION 有权

    公开(公告)号：US20210395881A1

    公开(公告)日：2021-12-23

    申请号：US16904169

    申请日：2020-06-17

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Saket RATHI ,  Tuan Anh NGUYEN

    IPC: C23C16/04

    Abstract: Embodiments of the disclosure relate to faceplates for a processing chamber. In one example, a faceplate includes a body having a plurality of apertures formed therethrough. A heating element is disposed within the body, and the heating element circumscribes the plurality of apertures. A support ring is disposed in the body. The support ring circumscribes the heating element. The support ring includes a main body and a cantilever extending radially inward from the main body. The cantilever contacts the body of the faceplate.

    RADIO FREQUENCY POWER RETURN PATH
    8.
    发明申请
    RADIO FREQUENCY POWER RETURN PATH 有权

    公开(公告)号：US20210032748A1

    公开(公告)日：2021-02-04

    申请号：US16941994

    申请日：2020-07-29

    Applicant: Applied Materials, Inc.

    Inventor： Luke BONECUTTER ,  David BLAHNIK ,  Tuan Anh NGUYEN ,  Amit Kumar BANSAL

    IPC: C23C16/458 ,  H01J37/32 ,  C23C16/505

    Abstract: Embodiments presented herein are directed to radio frequency (RF) grounding in process chambers. In one embodiment, a dielectric plate is disposed between a chamber body and a lid of a process chamber. The dielectric plate extends laterally into a volume defined by the chamber body and the lid. A substrate support is disposed in the volume opposite the lid. The substrate support includes a support body disposed on a stem. The support body includes a central region and a peripheral region. The peripheral region is radially outward of the central region. The central region has a thickness less than a thickness of the peripheral region. A flange is disposed adjacent to a bottom surface of the peripheral region. The flange extends radially outward from an outer edge of the peripheral region. A bellows is disposed on the flange and configured to sealingly couple to the dielectric plate.

    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES
    9.
    发明申请
    SHOWERHEAD ASSEMBLY WITH MULTIPLE FLUID DELIVERY ZONES 审中-公开

    公开(公告)号：US20170101712A1

    公开(公告)日：2017-04-13

    申请号：US14965061

    申请日：2015-12-10

    Applicant: Applied Materials, Inc.

    Inventor： Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ ,  Sanjeev BALUJA ,  Sam H. KIM ,  Tuan Anh NGUYEN

    IPC: C23C16/455

    CPC classification number: C23C16/45565 ,  C23C16/45574

    Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

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