公开(公告)号：USD1007449S1

公开(公告)日：2023-12-12

申请号：US29782632

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Designer： David Gunther ,  Kirankumar Neelasandra Savandaiah ,  Jiao Song ,  Madan Kumar Shimoga Mylarappa ,  Yue Cui ,  Nuno Yen-Chu Chen ,  Mengxue Wu

Abstract: FIG. 1 is a top perspective view of a sputtering target for a physical vapor deposition chamber, according to one embodiment of the novel design.
FIG. 2 is a top plan view thereof.
FIG. 3 is a bottom plan view thereof.
FIG. 4 is a right side elevation view thereof.
FIG. 5 is a left side elevation view thereof.
FIG. 6 is a front elevation thereof.
FIG. 7 is a back elevation view thereof; and,
FIG. 8 is an enlarged partial right side elevation view showing portions of the design in greater detail.
The dash-dash broken lines in FIGS. 1-8 represent unclaimed environment and form no part of the claimed design.
The short dash-dot lines on FIG. 4 and FIG. 8 depict the bounds of the region taken from FIG. 4 to be enlarged on FIG. 8 and form no part of the claimed design.

公开(公告)号：US11784033B2

公开(公告)日：2023-10-10

申请号：US17333732

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Mengxue Wu ,  Siew Kit Hoi ,  Jay Min Soh ,  Yue Cui ,  Chul Nyoung Lee ,  Palaniappan Chidambaram ,  Jiao Song

IPC: C23C14/35 ,  H01J3/34 ,  H01J37/34 ,  C23C14/54 ,  C23C14/34

CPC classification number: H01J37/3476 ,  C23C14/345 ,  C23C14/3492 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3455 ,  C23C14/351

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

公开(公告)号：US12048948B2

公开(公告)日：2024-07-30

申请号：US16427723

申请日：2019-05-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Yue Cui ,  Arvind Sundarrajan ,  Nuno Yen-Chu Chen ,  Guan Huei See ,  Felix Deng

IPC: B05D3/06 ,  H01L23/00 ,  H01P3/08 ,  H01P11/00

CPC classification number: B05D3/06 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03515 ,  H01L2224/0401 ,  H01L2224/05024 ,  H01L2924/19031 ,  H01L2924/19032 ,  H01L2924/3511 ,  H01P3/08 ,  H01P11/003

Abstract: Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.

公开(公告)号：US20200206775A1

公开(公告)日：2020-07-02

申请号：US16427723

申请日：2019-05-31

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Yue Cui ,  Arvind Sundarrajan ,  Nuno Yen-Chu Chen ,  Guan Huei See ,  Felix Deng

IPC: B05D3/06

Abstract: Methods of curing a polymer layer on a substrate using variable microwave frequency are provided herein. In some embodiments, methods of curing a polymer layer on a substrate using variable microwave frequency include (a) forming a first thin-film polymer layer on a substrate, the first thin-film polymer layer including at least one first base dielectric material and at least one microwave tunable material, (b) applying a variable frequency microwave energy to the substrate and the first thin-film polymer layer to heat the substrate and the first thin-film polymer layer to a first temperature, and (c) adjusting the variable frequency microwave energy applied to the substrate and the first thin-film polymer layer to tune at least one material property of the first thin-film polymer layer.