摘要:
The invention relates to a process for producing a film of self-assembled block copolymers on a substrate, said process consisting in carrying out a simultaneous deposition of block copolymer and of random copolymer by means of a solution containing a blend of block copolymer and of random copolymer of different chemical nature and which are immiscible, then in carrying out an annealing treatment allowing the promotion of the phase segregation inherent in the self-assembly of block copolymers.
摘要:
The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which is crystallizable or has at least one liquid crystal phase.
摘要:
The present invention relates to a process for the perpendicular orientation of nanodomains of block copolymers on a substrate by using a sublayer of random or gradient copolymers whose monomers differ at least in part from those present, respectively, in each of the blocks of the block copolymer.
摘要:
The invention relates to a process that enables the creation of nanometric structures by self-assembly of block copolymers, at least one of the blocks of which results from the polymerization of monomers comprising at least one cyclic entity corresponding to the formula I. where X═Si(R1,R2); Ge(R1,R2) Z═Si(R3,R4); Ge(R3,R4); O; S; C(R3,R4) Y═O; S; C(R5,R6) T=O; S; C(R7,R8) R1, R2, R3, R4, R5, R6, R7, R8 are selected from hydrogen, linear, branched or cyclic alkyl groups, with or without heteroatoms, and aromatic groups with or without heteroatoms.
摘要:
The present invention relates to the field of organic electronics for photovoltaic energy, i.e. conversion of light energy into electricity. More particularly, this invention relates to a method of fabrication of an active layer capable of emitting an electric current under light irradiation combining a ferroelectric polymer material and a semiconducting polymer for converting light energy into electricity.
摘要:
The present invention relates to a process for producing nanostructured films obtained from block copolymers exhibiting a dispersity index of between 1.1 and 2, limits included, without nanostructuring defects, on a surface, in order for this treated surface to be able to be used as masks for applications in microelectronics.