公开(公告)号：US10270416B2

公开(公告)日：2019-04-23

申请号：US15410922

申请日：2017-01-20

Applicant: ARM Limited

Inventor： Bal S. Sandhu ,  Mudit Bhargava ,  Akshay Kumar ,  Piyush Agarwal ,  Shidhartha Das

IPC: H03H7/06 ,  H03H7/065 ,  H03H7/01 ,  H01L27/10 ,  H01L45/00

Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analog or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

公开(公告)号：US09859003B1

公开(公告)日：2018-01-02

申请号：US15334747

申请日：2016-10-26

Applicant: ARM Limited

Inventor： Shidhartha Das ,  Andreas Hansson ,  Akshay Kumar ,  Piyush Agarwal ,  Azeez Jennudin Bhavnagarwala ,  Lucian Shifren

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0064 ,  G11C2013/0045 ,  G11C2013/0054 ,  G11C2013/0076 ,  G11C2013/0078 ,  G11C2207/2263 ,  G11C2213/31

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

公开(公告)号：US10181350B2

公开(公告)日：2019-01-15

申请号：US15842207

申请日：2017-12-14

Applicant: ARM Limited

Inventor： Shidhartha Das ,  Andreas Hansson ,  Akshay Kumar ,  Piyush Agarwal ,  Azeez Jennudin Bhavnagarwala ,  Lucian Shifren

IPC: G11C11/00 ,  G11C13/00

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

公开(公告)号：US09882576B1

公开(公告)日：2018-01-30

申请号：US15398142

申请日：2017-01-04

Applicant: ARM Limited

Inventor： Bal S. Sandhu ,  Piyush Agarwal ,  Akshay Kumar

IPC: H03M1/78 ,  H03M1/12 ,  H03M1/38

CPC classification number: H03M1/1004 ,  H03M1/46 ,  H03M1/785

Abstract: An analog-to-digital converter (ADC) and method of operation thereof are provided for converting an analog signal to a digital signal. The ADC utilizes Correlated Electron Material (CEM) devices that may contain a transition metal oxide (TMO), such as Nickel Oxide (NiO). The ADC may include an interconnect circuit that is operable to couple a power supply to the CEM devices. The power supply is controlled to program the resistance of the CEM devices and thereby control performance characteristics of the ADC.