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公开(公告)号:US11886987B2
公开(公告)日:2024-01-30
申请号:US16451205
申请日:2019-06-25
申请人: Arm Limited
摘要: A multiply-accumulate method and architecture are disclosed. The architecture includes a plurality of networks of non-volatile memory elements arranged in tiled columns. Logic digitally modulates the equivalent conductance of individual networks among the plurality of networks to map the equivalent conductance of each individual network to a single weight within the neural network. A first partial selection of weights within the neural network is mapped into the equivalent conductances of the networks in the columns to enable the computation of multiply-and-accumulate operations by mixed-signal computation. The logic updates the mappings to select a second partial selection of weights to compute additional multiply-and-accumulate operations and repeats the mapping and computation operations until all computations for the neural network are completed.
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公开(公告)号:US11886972B2
公开(公告)日:2024-01-30
申请号:US17036490
申请日:2020-09-29
申请人: Arm Limited
IPC分类号: G06N3/04 , G11C13/00 , G06F7/544 , H03M1/12 , H03M1/66 , G06N3/065 , G06N3/045 , G06N3/048 , G11C11/54 , G06N3/044
CPC分类号: G06N3/04 , G06F7/5443 , G06N3/045 , G06N3/048 , G06N3/065 , G11C11/54 , G11C13/0007 , G11C13/0069 , G06N3/044 , H03M1/12 , H03M1/66
摘要: A non-volatile memory (NVM) crossbar for an artificial neural network (ANN) accelerator is provided. The NVM crossbar includes row signal lines configured to receive input analog voltage signals, multiply-and-accumulate (MAC) column signal lines, a correction column signal line, a MAC cell disposed at each row signal line and MAC column signal line intersection, and a correction cell disposed at each row signal line and correction column signal line intersection. Each MAC cell includes one or more programmable NVM elements programmed to an ANN unipolar weight, and each correction cell includes one or more programmable NVM elements. Each MAC column signal line generates a MAC signal based on the input analog voltage signals and the respective MAC cells, and the correction column signal line generates a correction signal based on the input analog voltage signals and the correction cells. Each MAC signal is corrected based on the correction signal.
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公开(公告)号:US20230297432A1
公开(公告)日:2023-09-21
申请号:US17697706
申请日:2022-03-17
申请人: Arm Limited
摘要: Various implementations described herein are related to a method that monitors workloads of a neural network for current spikes. The method may determine current transitions of the workloads that result in rapid changes in load current consumption of the neural network. The method may modify load scheduling of the neural network so as to smooth and/or stabilize the current transitions of the workloads.
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公开(公告)号:US20210365764A1
公开(公告)日:2021-11-25
申请号:US16879587
申请日:2020-05-20
申请人: Arm Limited
摘要: Various implementations are related to an apparatus with memory cells arranged in columns and rows, and the memory cells are accessible with a column control voltage for accessing the memory cells via the columns and a row control voltage for accessing the memory cells via the rows. The apparatus may include neural network circuitry having neuronal junctions that are configured to receive, record, and provide information related to incoming voltage spikes associated with input signals based on resistance through the neuronal junctions. The apparatus may include stochastic re-programmer circuitry that receives the incoming voltage spikes, receives the information provided by the neuronal junctions, and reconfigure the information recorded in the neuronal junctions based on the incoming voltage spikes associated with the input signals along with a programming control signal provided by the memory circuitry.
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公开(公告)号:US20210149834A1
公开(公告)日:2021-05-20
申请号:US16685090
申请日:2019-11-15
申请人: Arm Limited , ECS Partners Limited
摘要: A chip-carrier package includes a data processing system having one or more slave dies, a master die and a system bus. Each slave die includes a slave device and a slave-side wireless bus interface (WBI) coupled to the slave device. The master die includes a master device, one or more bus-side WBIs coupled to the master device. Each bus-side WBI is configured to be wirelessly coupled to at least one slave-side WBI of the one or more slave dies and a system bus. The system bus includes the one or more bus-side WBIs and the slave-side WBIs of the one or more slave-side dies. The system bus is configured to exchange information between the master device and the slave devices of the one or more slave dies.
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公开(公告)号:US20210064789A1
公开(公告)日:2021-03-04
申请号:US17048521
申请日:2019-04-18
申请人: Arm Limited
摘要: A method and authenticator for authenticating a device in a system using the electrical properties of the device is disclosed. Embodiments of the disclosure enable authentication by receiving a plurality of input seed values from a requestor. For each input seed value, load stimuli are generated to produce an electrical load sequence on a power delivery network powering at least part of the system. Noise induced in the power delivery network is measured in response to the electrical load sequence using one or more sensors located on the power delivery network. Based on the measured noise, a dynamic response property (magnitude and phase response as a function of frequency) of the power delivery network corresponding to a respective input seed value can be determined and returned to the requestor.
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公开(公告)号:US20200226095A1
公开(公告)日:2020-07-16
申请号:US16645993
申请日:2018-09-25
申请人: Arm Limited
发明人: Mbou Eyole , Emre Ozer , Xabier Iturbe , Shidhartha Das
IPC分类号: G06F15/78 , G11C14/00 , H03K19/17728
摘要: A method of reconfiguration and a reconfigurable circuit architecture comprising a configurable volatile storage circuit and Non-Volatile Memory circuit elements; wherein the Non-Volatile memory circuit elements store multiple bit states for re-configuration, the multiple bit states being read from the Non-Volatile memory circuit elements and written into the configurable volatile storage circuit for reconfiguration. The Non-Volatile Memory circuit elements and the configurable volatile storage circuit are provided on a common die.
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公开(公告)号:US20180233194A1
公开(公告)日:2018-08-16
申请号:US15948918
申请日:2018-04-09
申请人: ARM Limited
发明人: Parameshwarappa Anand Kumar Savanth , James Edward Myers , Pranay Prabhat , David Walter Flynn , Shidhartha Das , David Michael Bull
IPC分类号: G11C11/419 , G11C5/06
CPC分类号: G11C11/419 , G11C5/063 , G11C11/4125
摘要: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.
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公开(公告)号:US09786362B1
公开(公告)日:2017-10-10
申请号:US15248335
申请日:2016-08-26
申请人: ARM Limited
IPC分类号: G11C8/00 , G11C11/419 , G11C11/418
CPC分类号: G11C11/419 , G11C5/14 , G11C7/18 , G11C11/413 , G11C11/418 , G11C2207/2236
摘要: A memory circuit comprises an array of data storage elements; access circuitry to access a data bit, stored by a data storage element enabled for access, by an access signal for that data storage element; and control circuitry to enable groups of data storage elements for access, the groups having a group size, the group size being one or more, the access signals for data storage elements in a group being combined to provide a combined access signal common to that group of data storage elements; the control circuitry being configured to selectively operate in at least a first mode and a second mode, the group size in the first mode being different to the group size in the second mode.
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公开(公告)号:US12124384B2
公开(公告)日:2024-10-22
申请号:US17817686
申请日:2022-08-05
申请人: Arm Limited
发明人: James Edward Myers , Shidhartha Das
CPC分类号: G06F12/1408 , G06F21/72 , G06F2212/1052
摘要: An integrated circuit device including processing circuitry, communications circuitry configured to provide a communication link with a communication apparatus external to the integrated circuit device, and a memory accessible by the processing circuitry and by the communications circuitry, the memory comprising a memory region to which the processing circuitry has write access and to which the communications circuitry has read access, in which the processing circuitry is configured to write information to the memory region indicative of one or more use conditions of the integrated circuit device, and in which the communications circuitry is configured to access the memory region and to provide the information indicative of the one or more use conditions of the integrated circuit device via the communication link.
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