摘要:
Various implementations described herein are related to a device with a bias generator that receives a pad control signal, receives an output pad voltage as a pad feedback signal from an output pad, and provides bias voltage signals based on the pad control signal and the pad feedback signal. The device may have a bias driver that receives the bias signals from the bias generator and provides the output pad voltage to the output pad based on the bias signals. The device may have a pad voltage detector that receives the output pad voltage as the pad feedback signal from the output pad and provides the pad control signal to the bias generator based on the pad feedback signal.
摘要:
Various implementations described herein are directed to an integrated circuit. The integrated circuit may include signal generation circuitry that receives an input signal from a first voltage domain and generates multiple internal signals based on the input signal. The integrated circuit may include signal evaluation circuitry that receives the multiple internal signals from the signal generation circuitry and provides an intermediate signal based on the multiple internal signals. The integrated circuit may include signal conversion circuitry that receives the intermediate signal and provides an output signal for a second voltage domain based on the intermediate signal. The integrated circuit may include signal protection circuitry that receives the input signal from the first voltage domain, receives the intermediate signal from the signal evaluation circuitry, and allows the input signal until the intermediate signal transitions between a first state and a second state that is different than the first state.
摘要:
The present invention provides a receiver circuit and method for receiving an input signal from a source voltage domain and converting the input signal into an output signal for a destination voltage domain. The source voltage domain operates from a supply voltage that exceeds a stressing threshold of components within the receiver circuitry, and the receiver circuitry is configured to operate from the supply voltage of the source voltage domain. The receiver circuitry comprises first internal signal generation circuitry configured to convert the input signal into a first internal signal in a first voltage range, and second internal signal generation circuitry configured to convert the input signal into a second internal signal in a second voltage range. Signal evaluation circuitry establishes a logic high voltage threshold and a logic low voltage threshold dependent on the supply voltage, and employs the first and second internal signals in order to detect based on the logic high voltage threshold and logic low voltage threshold when the input signal transitions between a logic low level and a logic high level (in either direction). Output generation circuitry then generates the output signal in dependence on the detection performed by the signal evaluation circuitry. The first voltage range and the second voltage range are such that the first internal signal and second internal signal will not exceed the stressing threshold of components in the signal evaluation circuitry. The receiver circuitry is able to reliably detect transitions in the input signal in situations where the supply voltage of the source voltage domain exceeds the stressing threshold of the receiver's components, but without overstress of the receiver's components.
摘要:
A memory controller and a method of calibrating the memory controller are provided. Input circuitry in the memory controller receives a differential pair of data strobe signals from a memory and generates a logical data strobe signal in dependence on a voltage difference between the differential pair of data strobe signals. Hysteresis circuitry, when active, increases by a predetermined offset a threshold voltage difference at which the input circuitry changes a logical state of the logical data strobe signal. Gate signal generation circuitry generates a data strobe gating signal, wherein the memory controller interprets the logical data strobe signal as valid when the data strobe gating signal is asserted. The memory controller performs a training process to determine a timing offset for the data strobe gating signal with respect to said logical data strobe signal, wherein the training process provides a first phase in which the hysteresis circuitry is active and a second phase in which the hysteresis circuitry is inactive.
摘要:
Output signal generation circuitry 100 may be used for converting an input signal 110 from a source voltage domain to an output signal for a destination voltage domain, the destination voltage domain operating from a supply voltage that exceeds a stressing threshold of components within the output signal generation circuitry. The output signal generation circuitry may comprise level shifting circuitry 160 operating from the supply voltage, which is configured to generate at an output node 130 the output signal for the destination voltage domain in dependence on the input signal. The output signal generation circuitry may also comprise tracking circuitry 280A, 280B, 280C, 280D associated with at least one component of the level shifting circuitry to ensure that a voltage drop across the at least one component does not exceed the stressing threshold, wherein the tracking circuitry additionally introduces a delay in a change in the output signal in response to a change in the input signal. Timing compensation circuitry 180A, 180B may also be provided, to control the voltage on the output node in a manner to compensate for the delay introduced by the tracking circuitry.
摘要:
Various implementations described herein are directed to an integrated circuit for electrostatic discharge (ESD) protection. The integrated circuit may include a detection stage having a resistor and a first capacitor cascaded with a second capacitor. The resistor and the first capacitor are arranged to define a triggering node configured to provide a triggering signal. The first capacitor and the second capacitor are arranged to define a reference node configured to provide a reference signal. The integrated circuit may include a first ESD clamping stage having a first transistor configured to provide a supply voltage to a first clamping transistor based on the triggering signal. The integrated circuit may include a second ESD clamping stage having a second transistor configured to receive the supply voltage from the first transistor and provide the supply voltage to a second clamping transistor based on the reference signal.
摘要:
Output signal generation circuitry 100 may be used for converting an input signal 110 from a source voltage domain to an output signal for a destination voltage domain, the destination voltage domain operating from a supply voltage that exceeds a stressing threshold of components within the output signal generation circuitry. The output signal generation circuitry may comprise level shifting circuitry 160 operating from the supply voltage, which is configured to generate at an output node 130 the output signal for the destination voltage domain in dependence on the input signal. The output signal generation circuitry may also comprise tracking circuitry 280A, 280B, 280C, 280D associated with at least one component of the level shifting circuitry to ensure that a voltage drop across the at least one component does not exceed the stressing threshold, wherein the tracking circuitry additionally introduces a delay in a change in the output signal in response to a change in the input signal. Timing compensation circuitry 180A, 180B may also be provided, to control the voltage on the output node in a manner to compensate for the delay introduced by the tracking circuitry.
摘要:
Various implementations described herein are related to a device having header circuitry with first transistors that are configured to receive a supply voltage and provide a dynamically biased voltage. The device may include reference generation circuitry having multiple amplifiers that are configured to receive the supply voltage and provide reference voltages based on the supply voltage. The device may include bias generation circuitry having second transistors configured to track changes in the dynamically biased voltage and adjust the dynamically biased voltage by generating bias voltages based on the reference voltages and by applying the bias voltages to the header circuitry so as to adjust the dynamically biased voltage.
摘要:
Various implementations described herein are related to a device having header circuitry with first transistors that are configured to receive a supply voltage and provide a dynamically biased voltage. The device may include reference generation circuitry having multiple amplifiers that are configured to receive the supply voltage and provide reference voltages based on the supply voltage. The device may include bias generation circuitry having second transistors configured to track changes in the dynamically biased voltage and adjust the dynamically biased voltage by generating bias voltages based on the reference voltages and by applying the bias voltages to the header circuitry so as to adjust the dynamically biased voltage.
摘要:
Various implementations described herein are directed to a device having an output pad that provides an input-output (IO) voltage from an IO power supply. The device may include core ramp detection circuitry that detects a first ramp of a core voltage from a core power supply and provides a core ramp sensing signal. The device may include output logic circuitry that couples the output pad to ground after receiving the core ramp sensing signal so as to reduce leakage of the IO power supply.