公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20220301856A1

公开(公告)日：2022-09-22

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  H01L21/311 ,  B08B5/00 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20230324227A1

公开(公告)日：2023-10-12

申请号：US18190696

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Ernesto Suarez ,  Amir Kajbafvala ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran ,  Alexandros Demos

IPC: C23C16/52 ,  H01L21/67 ,  C23C16/44 ,  G01J5/00

CPC classification number: G01J5/0007 ,  C23C16/4407 ,  C23C16/52 ,  H01L21/67115 ,  H01L21/67248

Abstract: A method of depositing an epitaxial material layer using pyrometer-based control. The method includes cleaning a reaction chamber of a reactor system, and, after the cleaning, providing a substrate within the reaction chamber. The method includes stabilizing a temperature of the substrate relative to a target deposition temperature. During stabilization, the heater assembly is operated with control signals to operate heaters in the heater assembly that are generated based on a direct measurement of the temperature of the substrate, such as with one to three pyrometers. The method includes, after the stabilizing of the temperature of the substrate, depositing an epitaxial material layer on a surface of the substrate. Then, for an additional number of substrates, the method involves repeating the steps of providing a substrate within the reaction chamber, stabilizing the temperature of the substrate, and depositing an epitaxial material layer on the substrate followed by another chamber cleaning.

公开(公告)号：US20250034714A1

公开(公告)日：2025-01-30

申请号：US18784060

申请日：2024-07-25

Applicant: ASM IP Holding B.V.

Inventor： Wentao Wang ,  Peipei Gao ,  Kishor Patil ,  Aniket Chitale ,  Fan Gao ,  Xing Lin ,  Alexandros Demos ,  Amir Kajbafvala ,  Emesto Suarez ,  Arun Murali ,  Caleb Miskin ,  Bubesh Babu Jotheeswaran

IPC: C23C16/46 ,  C23C16/06 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12 ,  C30B29/52 ,  H01L21/02

Abstract: A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, is opposite the slotted surface and separated from the slotted surface by the thickness of the reflector body and spans the slotted surface of the reflector body. The ellipsoidal surface defines an elliptical profile that is orthogonal relative to the planar surface to concentrate heat flux at a distal focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

公开(公告)号：US12112938B2

公开(公告)日：2024-10-08

申请号：US17655245

申请日：2022-03-17

Applicant: ASM IP HOLDING B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: B08B5/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01L21/02046 ,  B08B5/00 ,  H01L21/31116 ,  H01L21/67069 ,  H01J2237/335

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

公开(公告)号：US20220367175A1

公开(公告)日：2022-11-17

申请号：US17875907

申请日：2022-07-28

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  B08B7/00 ,  B08B5/00 ,  H01L21/67 ,  H01J37/32 ,  H01L21/311

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.

公开(公告)号：US20190019670A1

公开(公告)日：2019-01-17

申请号：US16000109

申请日：2018-06-05

Applicant: ASM IP Holding B.V.

Inventor： Xing Lin ,  Peipei Gao ,  Fei Wang ,  John Tolle ,  Bubesh Babu Jotheeswaran ,  Vish Ramanathan ,  Eric Hill

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/00 ,  B08B7/00

Abstract: A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.