SYSTEMS AND METHODS FOR CONTROLLING MOISTURE IN SEMICONDUCTOR PROCESSING SYSTEMS

    公开(公告)号:US20230197472A1

    公开(公告)日:2023-06-22

    申请号:US18065869

    申请日:2022-12-14

    Abstract: A semiconductor processing system includes a front-end module connected to a load lock, a process module coupled to the front-end module by the load lock, a purge/vent fluid inlet conduit connected to the load lock, a heater element coupled to the load lock by the purge/vent fluid inlet conduit, and a controller. The controller is operably connected to the heater element and responsive to instructions recorded on a memory to transfer a substrate carrying substrate moisture from the front-end module into the load lock, heat a purge/vent fluid using the heater element, flow the heated purge/vent fluid into the load lock using the purge/vent fluid inlet conduit, remove the moisture from the load lock using the heated purge/vent fluid, and transfer the substrate from the load lock to the process module for processing using the process module. Moisture control methods and heated purge/vent fluid arrangements are also described.

    SYSTEMS AND METHODS FOR SUBSTRATE COOLING AND/OR HEATING USING COOLING GAS INTRODUCED FROM ANOTHER CHAMBER

    公开(公告)号:US20250038012A1

    公开(公告)日:2025-01-30

    申请号:US18783113

    申请日:2024-07-24

    Abstract: Substrate processing systems and methods include sealing a gate valve connecting a first chamber (e.g., a load-lock module) and a second chamber (e.g., an equipment front end module), wherein a first side of the first chamber connects to layer deposition equipment and a second side of the first chamber connects to the second chamber via the gate valve. The second chamber receives (i) incoming substrates to be supplied to the first chamber and (ii) outgoing substrates to be removed from the first chamber. In use, a processed substrate is moved from the layer deposition equipment into the first chamber. This processed substrate is cooled by transferring inert gas from the second chamber into the first chamber and into contact with the processed substrate, thereby transferring heat from the processed substrate to the inert gas. After passing over the processed substrate, the inert gas is exhausted from the first chamber.

    NON-CONTACT COOLING ASSEMBLY FOR COOLING SUBSTRATES

    公开(公告)号:US20250081327A1

    公开(公告)日:2025-03-06

    申请号:US18813147

    申请日:2024-08-23

    Inventor: Mandar Deshpande

    Abstract: A non-contact cooling assembly for cooling substrates in equipment front end module in batch is presented. The cooling assembly may comprise a support beam and a plurality of cooling plates, wherein the cooling plates are arranged horizontally stacked and attached to the support beam, and wherein the support beam is configured to move horizontally for cooling substrates. Each of the cooling plates may utilize either thermoelectric cooling effect or cooling fluid for cooling the cooling plates and a cooling plate is placed at a first position (distal position) at first and it moves to a second position (proximal position) for more effective substrate cooling.

    THERMAL BREAK BETWEEN A SUBSTRATE PROCESSING CHAMBER AND SUBSTRATE HANDLING CHAMBER

    公开(公告)号:US20240426381A1

    公开(公告)日:2024-12-26

    申请号:US18745241

    申请日:2024-06-17

    Abstract: Thermal breaks and/or gaps between portions of interfacing surfaces of two chambers reduce heat transfer between the chambers. An interface surface (e.g., of a gate valve) includes (i) a base surface; (ii) a raised ring surface extending outward beyond the base surface, wherein the raised ring surface extends around a gate valve access opening; (iii) a seal support surface extending around the raised ring surface; and (iv) at least one raised boss surface extending outward beyond the base surface. The interface surface defines an outer perimeter having a total interface area. The raised ring surface and raised boss surface(s) define at least a portion of a total contacting surface area of the interface surface that is spaced outward from the base surface. The total contacting surface area of the interface surface is less than 10% of the total interface area and/or less than 10% of the base surface's surface area.

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