公开(公告)号：US10832903B2

公开(公告)日：2020-11-10

申请号：US15861418

申请日：2018-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  C23C16/44

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.

公开(公告)号：US10009961B2

公开(公告)日：2018-06-26

申请号：US14335278

申请日：2014-07-18

Applicant: ASM IP HOLDING B.V.

Inventor： Sokol Ibrani

IPC: H05B3/68 ,  F27D11/00 ,  H05B3/02 ,  C23C16/00 ,  H05B6/10 ,  C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458

CPC classification number: H05B6/105 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

Abstract: The present disclosure relates to a substrate support and a heating assembly comprising heaters for controlling the temperature uniformity of a susceptor of the assembly and a substrate, which may be used for thin film deposition on a substrate such as semi-conductor wafer, and a method of using the same is provided for improved temperature uniformity of a susceptor and a substrate heated by the heating assembly.

公开(公告)号：US20160021707A1

公开(公告)日：2016-01-21

申请号：US14335278

申请日：2014-07-18

Applicant: ASM IP HOLDING B.V.

Inventor： Sokol Ibrani

IPC: H05B6/10 ,  C23C16/46 ,  C23C16/458

CPC classification number: H05B6/105 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68792

Abstract: A heating assembly, such as may be used in thin film deposition, and a method of use is provided for improved temperature uniformity of a susceptor and substrate heated by the heating assembly. The substrate may be a semi-conductor wafer.

Abstract translation: 提供诸如可用于薄膜沉积的加热组件，以及用于改善由加热组件加热的基座和基板的温度均匀性的方法。 衬底可以是半导体晶片。

公开(公告)号：US20180130652A1

公开(公告)日：2018-05-10

申请号：US15861418

申请日：2018-01-03

Applicant: ASM IP Holding B.V.

Inventor： Fred Pettinger ,  Carl White ,  Dave Marquardt ,  Sokol Ibrani ,  Eric Shero ,  Todd Dunn ,  Kyle Fondurulia ,  Mike Halpin

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01L21/02104 ,  C23C16/4409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32532

Abstract: Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange structures separated from one another by intervening gaps. The example gas channel plate also includes a heat exchange fluid director plate support surface for supporting a heat exchange fluid director plate above the plurality of heat exchange structures so that at least a portion of the plurality of heat exchange structures are spaced from the heat exchange fluid director plate.