SEMICONDUCTOR PROCESSING APPARATUS AND METHODS FOR MONITORING AND CONTROLLING A SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20190276934A1

    公开(公告)日:2019-09-12

    申请号:US15917224

    申请日:2018-03-09

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

    SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE
    2.
    发明申请
    SUSCEPTOR HEATER AND METHOD OF HEATING A SUBSTRATE 有权
    SUSCEPTOR加热器和加热基材的方法

    公开(公告)号:US20150096973A1

    公开(公告)日:2015-04-09

    申请号:US14563044

    申请日:2014-12-08

    Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.

    Abstract translation: 晶片处理装置可以包括具有顶侧和背面的基座,具有间隔构件和加热构件的基座加热器,可移除地安装在基座和基座加热器之间的垫片,由基座背面形成的空腔,基座 加热器和垫片,与空腔连通的流体入口以及与空腔连通的多个流体出口。

    Semiconductor processing apparatus and methods for monitoring and controlling a semiconductor processing apparatus

    公开(公告)号:US12234552B2

    公开(公告)日:2025-02-25

    申请号:US18131170

    申请日:2023-04-05

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

    SEMICONDUCTOR PROCESSING APPARATUS AND METHODS FOR MONITORING AND CONTROLLING A SEMICONDUCTOR PROCESSING APPARATUS

    公开(公告)号:US20230243033A1

    公开(公告)日:2023-08-03

    申请号:US18131170

    申请日:2023-04-05

    CPC classification number: C23C16/45544 C23C16/52 C23C16/46

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

    REMOTE SOLID SOURCE REACTANT DELIVERY SYSTEMS FOR VAPOR DEPOSITION REACTORS

    公开(公告)号:US20230175127A1

    公开(公告)日:2023-06-08

    申请号:US18074629

    申请日:2022-12-05

    Inventor: Todd Dunn Paul Ma

    CPC classification number: C23C16/4481 C23C16/45561 C23C16/52

    Abstract: Herein disclosed are systems and methods related to remote delivery systems using solid source chemical bulk fill vessels. The delivery system can include a vapor deposition reactor, two or more bulk fill vessels remote from the vapor deposition reactor, an interconnect line, a line heater, and a gas panel comprising one or more valves. Each bulk fill vessel is configured to hold solid source chemical reactant therein. The bulk fill vessels can each include fluid outlets. The interconnect line can fluidly connect the vapor deposition reactor with each bulk fill vessel. The line heater can heat at least a portion of the interconnect line to at least a minimum line temperature. The one or more valves of the gas panel can switch a flow of vaporized chemical reactant through the interconnect line from being from one fluid outlet to being from another fluid outlet.

    Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate

    公开(公告)号:US11629406B2

    公开(公告)日:2023-04-18

    申请号:US15917224

    申请日:2018-03-09

    Abstract: A semiconductor processing apparatus is disclosed. The apparatus may include a multiple chamber module comprising at least a first reaction chamber and a second reaction chamber, and a first substrate support structure disposed within the first reaction chamber and a second substrate support structure disposed within the second reaction chamber. The apparatus may also include a wafer handling chamber comprising a transfer robot configured for transferring two or more substrates along a first transfer path between the wafer handling chamber and the first substrate support structure and a second transfer path between the wafer handling chamber and the second substrate support structure. The apparatus may also include at least a first pyrometer and a second pyrometer, wherein a first optical path of the first pyrometer intersects the first transfer path and a second optical path of the second pyrometer intersect the second transfer path. Methods of monitoring and controlling a semiconductor processing apparatus are also disclosed.

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