公开(公告)号：US20210287912A1

公开(公告)日：2021-09-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US11961741B2

公开(公告)日：2024-04-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US12266540B2

公开(公告)日：2025-04-01

申请号：US18530759

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20240128090A1

公开(公告)日：2024-04-18

申请号：US18530759

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02164 ,  H01L21/0217

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US11821078B2

公开(公告)日：2023-11-21

申请号：US17227814

申请日：2021-04-12

Applicant: ASM IP Holding B.V.

Inventor： Takeru Kuwano ,  Eiichiro Shiba ,  Toshikazu Hamada ,  Yoshinori Ota

IPC: C23C16/02 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

CPC classification number: C23C16/0272 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/3244 ,  H01J37/32183 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02274 ,  H01J2237/3321

Abstract: A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.

公开(公告)号：US20210324510A1

公开(公告)日：2021-10-21

申请号：US17227814

申请日：2021-04-12

Applicant: ASM IP Holding B.V.

Inventor： Takeru Kuwano ,  Eiichiro Shiba ,  Toshikazu Hamada ,  Yoshinori Ota

IPC: C23C16/02 ,  H01L21/02 ,  H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40

Abstract: A method for forming a precoat film on a metal surface in a chamber before forming a silicon-containing film having an identical composition system with that of the precoat film on a substrate in the chamber using a PECVD method, wherein the precoat film is formed using a PEALD method in which a first gas and a second gas are supplied into the chamber by shifting timing of supply, the PEALD method comprises an adsorption step comprising supplying the first gas into the chamber so that the source gas component adsorbs on the metal surface, a first purge step comprising discharging an excessive source gas component not adsorbed on the metal surface, and a precoat film forming step comprising supplying the second gas into the chamber and applying high-frequency power to generate plasma in the reactant gas component in the second gas.