OPTIMIZATION USING A NON-UNIFORM ILLUMINATION INTENSITY PROFILE

    公开(公告)号:US20220390832A1

    公开(公告)日:2022-12-08

    申请号:US17776728

    申请日:2020-11-18

    Abstract: A method for source mask optimization or mask only optimization used to image a pattern onto a substrate. The method includes determining a non-uniform illumination intensity profile for illumination; and determining one or more adjustments for the pattern based on the non-uniform illumination intensity profile until a determination that features patterned onto a substrate substantially match a target design. The non-uniform illumination intensity profile may be determined based on an illumination optical system and projection optics of a lithographic apparatus. In some embodiments, the lithographic apparatus includes a slit, and the non-uniform illumination profile is a through slit non-uniform illumination intensity profile. Determining the one or more adjustments for the pattern may include performing optical proximity correction, for example.

Patent Agency Ranking