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公开(公告)号：US10232413B2
公开(公告)日：2019-03-19
申请号：US15690707
申请日：2017-08-30
Applicant: ASML Netherlands B.V.
Inventor： Silvia De Dea , Chunguang Xia , Gregory James Wilson , Brandon Wilson Verhoff
Abstract: A fluid is directed toward a surface of an optical element based on a first flow pattern, the surface of the optical element including debris and the fluid directed based on the first flow pattern moving at least some of the debris to a first stagnation region at the surface of the optical element; and the fluid is directed toward the optical element based on a second flow pattern, the fluid directed based on the second flow pattern moving at least some of the debris to a second stagnation region on the surface of the optical element, the second stagnation region and the first stagnation region being different locations at the surface of the optical element. Directing the fluid toward the surface of the optical element based on the second flow pattern removes at least some of the debris from the first stagnation region.
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公开(公告)号：US11347154B2
公开(公告)日：2022-05-31
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US10955749B2
公开(公告)日：2021-03-23
申请号：US16469689
申请日：2018-01-05
Applicant: ASML NETHERLANDS B.V.
Inventor： Dzmitry Labetski , Christianus Wilhelmus Johannes Berendsen , Rui Miguel Duarte Rodriges Nunes , Alexander Igorevich Ershov , Kornelis Frits Feenstra , Igor Vladimirovich Fomenkov , Klaus Martin Hummler , Arun Johnkadaksham , Matthias Kraushaar , Andrew David Laforge , Marc Guy Langlois , Maksim Loginov , Yue Ma , Seyedmohammad Mojab , Kerim Nadir , Alexander Shatalov , John Tom Stewart, IV , Henricus Gerardus Tegenbosch , Chunguang Xia
Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.
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公开(公告)号：US20170036252A1
公开(公告)日：2017-02-09
申请号：US14937973
申请日：2015-11-11
Applicant: ASML Netherlands B.V.
Inventor： Silvia De Dea , Chunguang Xia , Gregory James Wilson , Brandon Wilson Verhoff
CPC classification number: B08B5/02 , G01F1/00 , G03F7/70925 , G03F7/70933
Abstract: A fluid is directed toward a surface of an optical element based on a first flow pattern, the surface of the optical element including debris and the fluid directed based on the first flow pattern moving at least some of the debris to a first stagnation region at the surface of the optical element; and the fluid is directed toward the optical element based on a second flow pattern, the fluid directed based on the second flow pattern moving at least some of the debris to a second stagnation region on the surface of the optical element, the second stagnation region and the first stagnation region being different locations at the surface of the optical element. Directing the fluid toward the surface of the optical element based on the second flow pattern removes at least some of the debris from the first stagnation region.
Abstract translation: 基于第一流动图案将流体引导到光学元件的表面，光学元件的表面包括碎屑，并且基于第一流动图案指向的流体将至少一些碎片移动到第一停滞区域 光学元件的表面; 并且基于第二流动图案将流体引向光学元件，基于第二流动图案指向的流体将至少一些碎片移动到光学元件的表面上的第二停滞区域，第二停滞区域和 第一停滞区域是在光学元件的表面处不同的位置。 基于第二流动模式将流体引导到光学元件的表面去除了来自第一停滞区域的至少一些碎屑。
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公开(公告)号：US11822252B2
公开(公告)日：2023-11-21
申请号：US17155951
申请日：2021-01-22
Applicant: ASML NETHERLANDS B.V.
Inventor： Dzmitry Labetski , Christianus Wilhelmus Johannes Berendsen , Rui Miguel Duarte Rodreigues Nunes , Alexander Igorevich Ershov , Kornelis Frits Feenstra , Igor Vladimirovich Fomenkov , Klaus Martin Hummler , Arun Johnkadaksham , Matthias Kraushaar , Andrew David Laforge , Marc Guy Langlois , Maksim Loginov , Yue Ma , Seyedmohammad Mojab , Kerim Nadir , Alexander Shatalov , John Tom Stewart , Henricus Gerardus Tegenbosch , Chunguang Xia
CPC classification number: G03F7/70033 , G03F7/70916 , H05G2/003 , H05G2/008
Abstract: An extreme ultraviolet radiation (EUV) source, including: a vessel having an inner vessel wall and an intermediate focus (IF) region; an EUV collector disposed inside the vessel, the EUV collector including a reflective surface configured to reflect EUV radiation toward the intermediate focus region, the reflective surface configured to directionally face the IF region of the vessel; a showerhead disposed along at least a portion of the inner vessel wall, the showerhead including a plurality of nozzles configured to introduce gas into the vessel; and one or more exhausts configured to remove gas introduced into the vessel, the one or more exhausts being oriented along at least a portion of the inner vessel wall so that the gas is caused to flow away from the EUV collector.
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Patent Agency Ranking
公开(公告)号：US20210063899A1
公开(公告)日：2021-03-04
申请号：US16961747
申请日：2019-02-12
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue MA
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20170361359A1
公开(公告)日：2017-12-21
申请号：US15690707
申请日：2017-08-30
Applicant: ASML Netherlands B.V.
Inventor： Silvia De Dea , Chunguang Xia , Gregory James Wilson , Brandon Wilson Verhoff
CPC classification number: B08B5/02 , G01F1/00 , G03F7/70925 , G03F7/70933
Abstract: A fluid is directed toward a surface of an optical element based on a first flow pattern, the surface of the optical element including debris and the fluid directed based on the first flow pattern moving at least some of the debris to a first stagnation region at the surface of the optical element; and the fluid is directed toward the optical element based on a second flow pattern, the fluid directed based on the second flow pattern moving at least some of the debris to a second stagnation region on the surface of the optical element, the second stagnation region and the first stagnation region being different locations at the surface of the optical element. Directing the fluid toward the surface of the optical element based on the second flow pattern removes at least some of the debris from the first stagnation region.
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公开(公告)号：US12189313B2
公开(公告)日：2025-01-07
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20220179328A1
公开(公告)日：2022-06-09
申请号：US17680784
申请日：2022-02-25
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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公开(公告)号：US20250085643A1
公开(公告)日：2025-03-13
申请号：US18962837
申请日：2024-11-27
Applicant: ASML Netherlands B.V.
Inventor： Chunguang Xia , Jonghoon Baek , John Tom Stewart, IV , Andrew David LaForge , Deniz Van Heijnsbergen , David Robert Evans , Nina Vladimirovna Dziomkina , Yue Ma
Abstract: In some general aspects, a surface of a structure within a chamber of an extreme ultraviolet (EUV) light source is cleaned using a method. The method includes generating a plasma state of a material that is present at a location adjacent to a non-electrically conductive body that is within the chamber. The generation of the plasma state of the material includes electromagnetically inducing an electric current at the location adjacent the non-electrically conductive body to thereby transform the material that is adjacent the non-electrically conductive body from a first state into the plasma state. The plasma state of the material includes plasma particles, at least some of which are free radicals of the material. The method also includes enabling the plasma particles to pass over the structure surface to remove debris from the structure surface without removing the structure from the chamber of the EUV light source.
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