METROLOGY SYSTEM, LITHOGRAPHIC APPARATUS, AND METHOD

    公开(公告)号:US20220121129A1

    公开(公告)日:2022-04-21

    申请号:US17432443

    申请日:2020-02-11

    Abstract: A metrology system includes a radiation source configured to generate radiation, an optical element configured to direct the radiation toward a grating structure comprising a non-constant pitch, and a detector configured to receive radiation scattered by the grating structure and generate a measurement based on the received radiation. The metrology system is configured to generate a set of measurements corresponding to a set of locations on the grating structure along a direction of the non-constant pitch and determine a parameter of a lithographic process or a correction for the metrology system based on the set of measurements.

    INTENSITY IMBALANCE CALIBRATION ON AN OVERFILLED BIDIRECTIONAL MARK

    公开(公告)号:US20240263941A1

    公开(公告)日:2024-08-08

    申请号:US18562675

    申请日:2022-05-24

    Abstract: Systems, apparatuses, and methods are provided for correcting the detected positions of alignment marks disposed on a substrate and aligning the substrate using the corrected data to accurately expose patterns on the substrate. An example method can include receiving a measurement signal including a combined intensity signal corresponding to first and second diffracted light beams diffracted from first and second alignment targets having different orientations. The example method can further include fitting the combined intensity signal using templates to determine weight values and determining, based on the templates and weight values, first and second intensity sub-signals corresponding to the first and second diffracted light beams. The method can further include determining first and second intensity imbalance signals based on the first and second intensity sub-signals and determining a set of corrections to the measurement signal based on the first and second intensity imbalance signals.

    GENERATING AN ALIGNMENT SIGNAL WITHOUT DEDICATED ALIGNMENT STRUCTURES

    公开(公告)号:US20250060680A1

    公开(公告)日:2025-02-20

    申请号:US18721405

    申请日:2022-12-14

    Abstract: Generating an alignment signal for alignment of features in a layer of a substrate as part of a semiconductor manufacturing process is described. The present systems and methods can be faster and/or generate more information than typical methods for generating alignment signals because they utilize one or more existing structures in a patterned semiconductor wafer instead of a dedicated alignment structure. A feature (not a dedicated alignment mark) of the patterned semiconductor wafer is continuously scanned, where the scanning includes: continuously irradiating the feature with radiation; and continuously detecting reflected radiation from the feature. The scanning is performed perpendicular to the feature, along one side of the feature, or along both sides of the feature.

    WAFER ALIGNMENT USING FORM BIREFRINGENCE OF TARGETS OR PRODUCT

    公开(公告)号:US20220137523A1

    公开(公告)日:2022-05-05

    申请号:US17432019

    申请日:2020-02-06

    Abstract: An alignment method includes directing an illumination beam with a first polarization state to form a diffracted beam with a second polarization state from an alignment target, and passing the diffracted beam through a polarization analyzer. The alignment method further includes measuring a polarization state of the diffracted beam and determining a location of the alignment target from the measured polarization state relative to its initial polarization state. The alignment target includes a plurality of diffraction gratings with a single pitch and two or more duty cycles, wherein the pitch is smaller than a wavelength of the illumination beam, and the location of the alignment target corresponds to the duty cycle of the diffraction grating.

    LITHOGRAPHIC APPARATUS, METROLOGY SYSTEM, AND ILLUMINATION SYSTEMS WITH STRUCTURED ILLUMINATION

    公开(公告)号:US20220373895A1

    公开(公告)日:2022-11-24

    申请号:US17764139

    申请日:2020-09-14

    Abstract: A system (500) includes an illumination system (502), a lens element (506), and a detector (504). The illumination system generates a beam of radiation (510) having a first spatial intensity distribution (800) at a pupil plane (528) and a second spatial intensity distribution (900) at a plane of a target (514). The first spatial intensity distribution comprises an annular intensity profile (802) or an intensity profile corresponding to three or more beams. The lens element focuses the beam onto the target. The second spatial intensity distribution is a conjugate of the first intensity distribution and has an intensity profile corresponding to a central beam (902) and one or more side lobes (904) that are substantially isolated from the central beam. The central beam has a beam diameter of approximately 20 microns or less at the target. The detector receives radiation scattered by the target and generates a measurement signal based on the received radiation.

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