Position measurement system, interferometer system and lithographic apparatus

    公开(公告)号:US11619886B2

    公开(公告)日:2023-04-04

    申请号:US16975745

    申请日:2019-03-01

    Abstract: A position measurement system including a first interferometer and a second interferometer arranged to determine a distance of the object in a first direction when the object is in a first measurement area by emitting beams onto a target surface of the object. The position measurement system further has a third interferometer and a fourth interferometer arranged to determine a distance of the object in the first direction when the object is in a second measurement area by emitting beams onto the target surface of the object. An arrangement of relative positions in a second direction of beams spots impinging on the target surface from the beams emitted by the first and second interferometers is different from an arrangement of relative positions in the second direction of beams spots impinging on the target surface from the beams emitted by the third and fourth interferometers.

    Lithographic method and apparatus

    公开(公告)号:US10747120B2

    公开(公告)日:2020-08-18

    申请号:US16558265

    申请日:2019-09-02

    Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

    Lithographic method and apparatus

    公开(公告)号:US10401735B2

    公开(公告)日:2019-09-03

    申请号:US15778093

    申请日:2016-11-03

    Abstract: A measurement method comprising using multiple radiation poles to illuminate a diffraction grating on a mask at a mask side of a projection system of a lithographic apparatus, coupling at least two different resulting diffraction orders per illumination pole through the projection system, using the projection system to project the diffraction orders onto a grating on a wafer such that a pair of combination diffraction orders is formed by diffraction of the diffraction orders, coupling the combination diffraction orders back through the projection system to detectors configured to measure the intensity of the combination diffraction orders, and using the measured intensity of the combination diffraction orders to measure the position of the wafer grating.

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