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公开(公告)号：US06258137B1
公开(公告)日：2001-07-10
申请号：US09413518
申请日：1999-10-06
IPC分类号： C09G100
CPC分类号： B82Y30/00 , C01F7/442 , C01P2002/01 , C01P2004/52 , C01P2004/64 , C01P2006/12 , C09K3/1436 , C09K3/1463 , Y10T428/2993
摘要： CMP processes and products employ aluminas comprising alpha alumina particles having a particle width of less than 50 nanometers and a surface area of at least 50 m2/gm.
摘要翻译： CMP工艺和产品使用包含粒径小于50纳米且表面积至少为50m 2 / gm的α氧化铝颗粒的氧化铝。
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公开(公告)号：US06364920B1
公开(公告)日：2002-04-02
申请号：US09553664
申请日：2000-04-21
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： CMP formulations comprising alumina particles and an iodate oxidizer can be stabilized against pH drift during use by acidification using an organic acid. Formulation pH stability can be further enhanced by treating the formulation at an elevated temperature before it is used.
摘要翻译： 包含氧化铝颗粒和碘酸盐氧化剂的CMP配方可以在使用期间通过使用有机酸的酸化来稳定，防止pH漂移。 制剂pH稳定性可以在使用前在高温下处理制剂进一步增强。
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公开(公告)号：US06238450B1
公开(公告)日：2001-05-29
申请号：US09553968
申请日：2000-04-21
IPC分类号： C04B3550
CPC分类号： C01F17/0043 , C01P2004/01 , C01P2004/03 , C01P2004/62 , C01P2006/12 , C09K3/1463 , H01L21/30625
摘要： A polishing slurry, useful in optical or CMP applications, comprises a ceria with a BET surface area of at least 10 m2/gm. The slurry may be made by subjecting a commercial ceria slurry comprising agglomerates to a mechano-chemical treatment at a pH of from 9 to 11 using media that are low purity alpha alumina or zirconia. Preferred slurries maintain a positive surface charge at all pH values. CMP slurries preferably comprise in addition an anionic surfactant to aid in removal of surface residues.
摘要翻译： 可用于光学或CMP应用的抛光浆料包含BET表面积至少为10m 2 / gm的二氧化铈。 可以通过使用低纯度α氧化铝或氧化锆的介质，使包含附聚物的商业二氧化铈浆料在pH为9至11的机械化学处理下进行制备浆料。 优选的浆料在所有pH值下保持正表面电荷。 CMP浆料优选还包含阴离子表面活性剂以帮助除去表面残留物。
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公开(公告)号：US08197303B2
公开(公告)日：2012-06-12
申请号：US11963454
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
IPC分类号： B24B1/00
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
摘要翻译： 蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向并且具有不大于约0.037μm/ cm 2的nTTV的大致平坦表面， 其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，所述基底的直径不小于约9.0cm。
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公开(公告)号：US08455879B2
公开(公告)日：2013-06-04
申请号：US11963420
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
IPC分类号： H01L29/15
CPC分类号： B24B7/228 , Y10T428/257 , Y10T428/26
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
摘要翻译： 蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向并具有不大于约0.037μm/ cm 2的nTTV的大致平坦表面， 其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，所述基底的直径不小于约9.0cm。
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公开(公告)号：US20080164578A1
公开(公告)日：2008-07-10
申请号：US11963369
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
IPC分类号： H01L31/036
CPC分类号： C30B29/20
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
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公开(公告)号：US20080164458A1
公开(公告)日：2008-07-10
申请号：US11963420
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Ramanujam Vedantham
CPC分类号： B24B7/228 , Y10T428/257 , Y10T428/26
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
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公开(公告)号：US07972196B2
公开(公告)日：2011-07-05
申请号：US12145901
申请日：2008-06-25
申请人： Brahmanandam V. Tanikella , Christopher Arcona , David I. Gindhart , Christopher D. Jones , Matthew A. Simpson
发明人： Brahmanandam V. Tanikella , Christopher Arcona , David I. Gindhart , Christopher D. Jones , Matthew A. Simpson
IPC分类号： B24B49/00
摘要： A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle.
摘要翻译： 公开了改变单晶体的晶体取向的方法，其包括以下步骤：表征单晶体的晶体取向并计算单晶体的选择晶体学方向与晶体学方向的投影之间的取向角 沿着单晶体的第一外表面的平面。 该方法还包括从第一外部主表面的至少一部分去除材料以改变取向角。
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公开(公告)号：US07956356B2
公开(公告)日：2011-06-07
申请号：US11963369
申请日：2007-12-21
申请人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
发明人： Brahmanandam V. Tanikella , Matthew A. Simpson , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham
IPC分类号： H01L29/10
CPC分类号： C30B29/20
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
摘要翻译： 蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向并且具有不大于约0.037μm/ cm 2的nTTV的大致平坦表面， 其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，所述基底的直径不小于约9.0cm。
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公开(公告)号：US08740670B2
公开(公告)日：2014-06-03
申请号：US13472179
申请日：2012-05-15
申请人： Brahmanandam V. Tanikella , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham , Matthew A. Simpson
发明人： Brahmanandam V. Tanikella , Palaniappan Chinnakaruppan , Robert A. Rizzuto , Isaac K. Cherian , Ramanujam Vedantham , Matthew A. Simpson
IPC分类号： B24B1/00
CPC分类号： C30B29/20 , B24B7/228 , B24B27/0633 , B24D3/06 , B24D5/06 , H01L21/0242 , H01L23/15 , H01L2924/0002 , H04L29/12028 , H04L29/12594 , H04L61/103 , H04L61/3065 , H04L67/327 , Y10T428/21 , Y10T428/24355 , H01L2924/00
摘要： A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.
摘要翻译： 蓝宝石衬底包括具有选自由a面，r面，m面和c面取向组成的组的结晶取向并且具有不大于约0.037μm/ cm 2的nTTV的大致平坦表面， 其中nTTV是对于大致平坦的表面的表面积进行标准化的总厚度变化，所述基底的直径不小于约9.0cm。
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