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    Electrostatic chuck having a thermal transfer regulator pad
    3.
    发明授权
    Electrostatic chuck having a thermal transfer regulator pad 失效
    静电吸盘具有热转印调节垫

    公开(公告)号：US5978202A

    公开(公告)日：1999-11-02

    申请号：US883994

    申请日：1997-06-27

    申请人： Ralph M. Wadensweiler ,  Ajay Kumar ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Rolf A. Guenther

    发明人： Ralph M. Wadensweiler ,  Ajay Kumar ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Rolf A. Guenther

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6833 ,  Y10T279/23

    摘要： An electrostatic chuck 75 for holding a substrate 25 in a process chamber 20, comprises an electrostatic member 80 including an insulator having an electrode 95 therein and a receiving surface for receiving the substrate. A base 85 supports the electrostatic member, the base having a first thermal resistance R.sub.B and having a lower surface that rests on the process chamber. A thermal transfer regulator pad 100 is positioned between the receiving surface of the electrostatic member and the lower surface of the base, the thermal pad comprising a second thermal resistance R.sub.P that is sufficiently higher or lower than the thermal resistance R.sub.B of the base, to provide a predetermined temperature profile across a processing surface of the substrate during processing in the chamber.

    摘要翻译： 用于将基板25保持在处理室20中的静电卡盘75包括静电构件80，静电构件80包括其中具有电极95的绝缘体和用于接收基板的接收表面。 基座85支撑静电部件，底座具有第一热阻RB并且具有搁置在处理室上的下表面。 热传递调节器垫100定位在静电部件的接收表面和基部的下表面之间，热垫包括足够高于或低于基部的热阻RB的第二热阻RP，以提供 在腔室中处理期间在衬底的处理表面上的预定温度分布。

    Self-cleaning etch process
    4.
    发明授权
    Self-cleaning etch process 失效
    自清洁蚀刻工艺

    公开(公告)号：US06699399B1

    公开(公告)日：2004-03-02

    申请号：US09657793

    申请日：2000-09-08

    申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

    IPC分类号： C23F400

    CPC分类号： H01L21/02071 ,  Y10S438/905

    摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

    摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

    Etch endpoint detection
    6.
    发明授权
    Etch endpoint detection 有权
    蚀刻端点检测

    公开(公告)号：US06855567B1

    公开(公告)日：2005-02-15

    申请号：US09586530

    申请日：2000-05-31

    申请人： Tuqiang Ni ,  Andrew Lui ,  Chung-Ho Huang ,  Weinan Jiang

    发明人： Tuqiang Ni ,  Andrew Lui ,  Chung-Ho Huang ,  Weinan Jiang

    IPC分类号： H01J37/32 ,  H01L21/28 ,  H01L21/311 ,  H01L21/02

    CPC分类号： H01J37/32935 ,  H01J37/32963 ,  H01L21/28035 ,  H01L21/31122

    摘要： A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength. Also, a method for determining an endpoint for etching a layer having an approximate initial thickness by steps of, during etch, directing radiant energy at three or more wavelengths onto the layer to be etched; selecting first, second, and third wavelengths; approximating an etch rate from the time interval between a first detected intensity minimum and an adjacent intensity maximum reflected at the third wavelength, estimating an etch endpoint from the approximate initial thickness of the layer and the approximate etch rate; detecting the last intensity maximum reflected at the first wavelength prior to the estimated etch endpoint; and detecting the intensity maximum reflected at the second wavelength first occurring after the last intensity maximum at the first wavelength. The material making up the layer is at least partly transparent to both the first and the second wavelength. The first wavelength is longer than both the second wavelength and the third wavelength. In some embodiments the third wavelength is longer than the second wavelength. The endpoint is at the point of intensity maximum of the second wavelength or is at a point following an interval thereafter.

    摘要翻译： 用于确定用于蚀刻层的端点的方法包括以下步骤：估计蚀刻端点，并且在蚀刻期间将两个或更多波长的辐射能引导到待蚀刻的层上，检测在第一波长之前反射的最后强度最大值 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 而且，一种用于确定用于蚀刻具有近似初始厚度的层的端点的方法，该蚀刻步骤在蚀刻期间将三个或更多个波长的辐射能引导到待蚀刻的层上; 选择第一，第二和第三波长; 从第一检测强度最小值和在第三波长反射的相邻强度最大值之间的时间间隔近似蚀刻速率，从该层的近似初始厚度估计蚀刻终点和近似蚀刻速率; 在估计的蚀刻端点之前检测在第一波长处反射的最后强度最大值; 并且检测在第一波长的最后强度最大值之后首先出现的第二波长反射的强度最大值。 构成该层的材料对于第一和第二波长至少部分透明。 第一波长比第二波长和第三波长长。 在一些实施例中，第三波长比第二波长长。 端点处于第二波长的强度最大点处，或者在其后的间隔处。

    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER
    8.
    发明申请
    PLASMA PROCESSING METHOD AND APPARATUS WITH CONTROL OF PLASMA EXCITATION POWER 有权
    等离子体处理方法和控制等离子体激发能量的装置

    公开(公告)号：US20110253673A1

    公开(公告)日：2011-10-20

    申请号：US13172917

    申请日：2011-06-30

    申请人： Tuqiang NI ,  Frank Y. Lin ,  Chung-Ho Huang ,  Weinan Jiang

    发明人： Tuqiang NI ,  Frank Y. Lin ,  Chung-Ho Huang ,  Weinan Jiang

    IPC分类号： C23F1/00 ,  C23F1/08

    CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

    摘要： The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

    摘要翻译： 响应于存储在计算机存储器中的信号，提供给真空等离子体处理室中的等离子体的RF功率的量在预编程的基础上逐渐改变。 计算机存储器存储信号，使得其他处理室参数（压力，气体种类和气体流速）在发生逐渐变化时保持恒定。 存储的信号使得能够蚀刻圆形拐角而不是锋利的边缘，例如在沟槽壁和基部的交叉处。

    Method of plasma etching organic antireflective coating
    9.
    发明授权
    Method of plasma etching organic antireflective coating 有权
    等离子体蚀刻有机抗反射涂层的方法

    公开(公告)号：US06617257B2

    公开(公告)日：2003-09-09

    申请号：US09820737

    申请日：2001-03-30

    申请人： Tuqiang Ni ,  Weinan Jiang ,  Conan Chiang ,  Frank Y. Lin ,  Chris Lee ,  Dai N. Lee

    发明人： Tuqiang Ni ,  Weinan Jiang ,  Conan Chiang ,  Frank Y. Lin ,  Chris Lee ,  Dai N. Lee

    IPC分类号： H01L21302

    CPC分类号： B81C1/00595 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76838

    摘要： A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

    摘要翻译： 半导体制造方法，其中用无氧的含硫气体蚀刻有机抗反射涂层，其提供相对于下层的选择性和/或最小化上覆光致抗蚀剂的横向蚀刻速率以维持由光致抗蚀剂限定的临界尺寸。 蚀刻剂气体可以包括SO 2和诸如Ar或He的载气和任选的其它气体例如HBr的添加物。 该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。