公开(公告)号：US5893643A

公开(公告)日：1999-04-13

申请号：US824099

申请日：1997-03-25

申请人： Ajay Kumar ,  Jeffrey Chinn ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Brian Duda ,  Rolf Guenther ,  Bruce Minaee ,  Marco Mombelli ,  Mark Wiltse

发明人： Ajay Kumar ,  Jeffrey Chinn ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Brian Duda ,  Rolf Guenther ,  Bruce Minaee ,  Marco Mombelli ,  Mark Wiltse

IPC分类号： G01J5/02 ,  G01J5/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  G01M15/00

CPC分类号： H01L21/67248 ,  H01L21/67103

摘要： Apparatus for measuring wafer support pedestal temperature in a semiconductor wafer processing system. The apparatus measures infrared energy emitted by the bottom of the pedestal via a tube having one end inserted in a bore through the underside of the cathode pedestal base. The distal end of the tube is coupled to a temperature sensor. Both the tube and temperature sensor are fitted with insulating sleeve adapters to suppress unwanted RF signals from coupling to the sensor.

摘要翻译： 用于测量半导体晶片处理系统中的晶片支撑基座温度的装置。 该装置测量由基座的底部发射的红外能量，该管的一端通过阴极基座的底面插入孔中。 管的远端连接到温度传感器。 管和温度传感器均配有绝缘套管适配器，以防止不必要的RF信号与传感器耦合。

公开(公告)号：US5851926A

公开(公告)日：1998-12-22

申请号：US724383

申请日：1996-10-01

申请人： Ajay Kumar ,  Jeffrey Chinn ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Rolf Adolf Guenther ,  Bruce Minaee ,  Mark Wiltse

发明人： Ajay Kumar ,  Jeffrey Chinn ,  Shashank C. Deshmukh ,  Weinan Jiang ,  Rolf Adolf Guenther ,  Bruce Minaee ,  Mark Wiltse

IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L29/78

CPC分类号： H01L21/32135

摘要： An etchant composition of nitrogen trifluoride and chlorine, preferably also including a passivation material such as hydrogen bromide, etches tungsten silicide-polysilicon gate layers with high selectivity to a thin underlying silicon oxide gate oxide layer to form straight wall, perpendicular profiles with low microloading and excellent profile control.

摘要翻译： 三氟化氮和氯的蚀刻剂组合物，优选还包括钝化材料如溴化氢，蚀刻钨硅化物 - 多晶硅栅极层，其具有对薄的底层氧化硅栅极氧化物层的高选择性，以形成具有低微载荷的直壁，垂直剖面， 优秀的档案控制。

公开(公告)号：US06699399B1

公开(公告)日：2004-03-02

申请号：US09657793

申请日：2000-09-08

申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

IPC分类号： C23F400

CPC分类号： H01L21/02071 ,  Y10S438/905

摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残留物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

公开(公告)号：US6136211A

公开(公告)日：2000-10-24

申请号：US969122

申请日：1997-11-12

申请人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

发明人： Xue-Yu Qian ,  Zhi-Wen Sun ,  Weinan Jiang ,  Arthur Y. Chen ,  Gerald Zheyao Yin ,  Ming-Hsun Yang ,  Ming-Hsun Kuo ,  David S. L. Mui ,  Jeffrey Chinn ,  Shaoher X. Pan ,  Xikun Wang

IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  B08B9/00

CPC分类号： H01L21/02071 ,  Y10S438/905

摘要： A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.

摘要翻译： 用于在蚀刻室30中蚀刻基板25并同时清洗沉积在壁45的表面上的薄的，非均匀的蚀刻残留物和蚀刻室30的部件的方法。在蚀刻步骤中，包括蚀刻剂的工艺气体 使用气体来蚀刻蚀刻室30中的衬底25，从而在腔室30内沉积蚀刻残留物。将清洁气体加入到工艺气体足够长的时间内，并以足够高的体积流量比与反应和去除 基本上所有由工艺气体沉积的蚀刻残余物。 本方法有利地在蚀刻过程期间清洁室30中的蚀刻残留物，并且不使用单独的清洁，调理和调味处理步骤。

公开(公告)号：US20050241771A1

公开(公告)日：2005-11-03

申请号：US11175750

申请日：2005-07-06

申请人： Michael Rattner ,  Rolf Guenther ,  Jeffrey Chinn

发明人： Michael Rattner ,  Rolf Guenther ,  Jeffrey Chinn

IPC分类号： H01L21/00 ,  H01L21/687 ,  C23F1/00

CPC分类号： H01L21/68735 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/68757

摘要： A substrate carrier for carrying one or more substrates comprises a bottom surface, a top surface opposed to the bottom surface, one or more recesses formed into the top surface, each of the one or more recesses having a support surface that defines a support region for a substrate. The support region is adapted to contact a bottom of the substrate. The support region may have a thickness less than a depth of the one or more recesses. The support region may comprise a porous material to permit thermal fluid to percolate through the support region.

摘要翻译： 用于承载一个或多个衬底的衬底载体包括底表面，与底表面相对的顶表面，形成在顶表面中的一个或多个凹槽，所述一个或多个凹槽中的每一个具有支撑表面，该支撑表面限定用于 底物。 支撑区域适于接触基底的底部。 支撑区域可以具有小于一个或多个凹部的深度的厚度。 支撑区域可以包括多孔材料，以允许热流体渗透通过支撑区域。

公开(公告)号：US06518206B1

公开(公告)日：2003-02-11

申请号：US09566686

申请日：2000-05-08

申请人： Ajay Kumar ,  Jeffrey Chinn

发明人： Ajay Kumar ,  Jeffrey Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/0276 ,  H01L21/32137 ,  H01L21/32139 ,  Y10S438/952

摘要： A method for etching and removing an anti-reflective coating from a substrate. The method comprises providing a substrate supporting a conductive layer (a tungsten-silicide layer) having an anti-reflective coating (e.g., a dielectric anti-reflective coating) disposed thereon. The anti-reflective coating is etched with an etchant gas consisting of NF3 and Cl2 to break through and to remove at least a portion of the anti-reflective coating to expose at least part of the conductive layer. The conductive layer is subsequently etched with the etchant gas to produce an anti-reflective coating gate structure which is used in semiconductor integrated circuits containing transistors.

摘要翻译： 一种用于从基板上蚀刻和去除抗反射涂层的方法。 该方法包括提供支撑导电层（硅化钨层）的衬底，其具有设置在其上的抗反射涂层（例如，电介质抗反射涂层）。 用由NF 3和Cl 2组成的蚀刻剂气体蚀刻抗反射涂层，以穿透并除去至少一部分抗反射涂层以暴露至少部分导电层。 随后用蚀刻剂气体蚀刻导电层以产生用于包含晶体管的半导体集成电路中的抗反射涂层栅极结构。

公开(公告)号：US06541164B1

公开(公告)日：2003-04-01

申请号：US09022587

申请日：1998-02-12

申请人： Ajay Kumar ,  Jeffrey Chinn

发明人： Ajay Kumar ,  Jeffrey Chinn

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/0276 ,  H01L21/32137 ,  H01L21/32139 ,  Y10S438/952

摘要： A method for etching and removing an anti-reflective coating from a substrate. The method comprises providing a substrate supporting a conductive layer (a tungsten-silicide layer) having an anti-reflective coating (e.g., a dielectric anti-reflective coating) disposed thereon. The anti-reflective coating is etched with an etchant gas consisting of NF3 and Cl2 to break through and to remove at least a portion of the anti-reflective coating to expose at least part of the conductive layer. The conductive layer is subsequently etched with the etchant gas to produce an anti-reflective coating gate structure which is used in semiconductor integrated circuits containing transistors.

公开(公告)号：US6132631A

公开(公告)日：2000-10-17

申请号：US907448

申请日：1997-08-08

申请人： Padmapani Nallan ,  Ajay Kumar ,  Jeffrey Chinn

发明人： Padmapani Nallan ,  Ajay Kumar ,  Jeffrey Chinn

IPC分类号： H01L21/311 ,  H01L21/762 ,  H01L21/318

CPC分类号： H01L21/76224 ,  H01L21/31116

摘要： An etchant mixture of carbon tetrafluoride and argon in a plasma etch chamber produces straight walled isolation trenches in a silicon nitride layer, the trenches having rounded bottoms and no microtrenching.

摘要翻译： 在等离子体蚀刻室中的四氟化碳和氩气的蚀刻剂混合物在氮化硅层中产生直壁隔离沟槽，沟槽具有圆形底部并且没有微切口。

公开(公告)号：US6037265A

公开(公告)日：2000-03-14

申请号：US22772

申请日：1998-02-12

申请人： David Mui ,  Ajay Kumar ,  Jeffrey Chinn

发明人： David Mui ,  Ajay Kumar ,  Jeffrey Chinn

IPC分类号： C09K13/00 ,  H01L21/3065

CPC分类号： C09K13/00 ,  H01L21/32137 ,  H01L21/28123 ,  H01L21/823437

摘要： A method for producing a semiconductor device from a silicon substrate supporting a patterned hardmask layer, a tungsten silicide layer, a polysilicon layer, and a gate oxide layer. The method comprises etching the tungsten silicide layer and the polysilicon layer with an etchant gas comprising carbon monoxide (CO) and chlorine (Cl.sub.2). The etchant gas may also include hydrogen bromide (HBr) or a nitrogen-containing gas (e.g., N.sub.2).

摘要翻译： 一种用于从支撑图案化硬掩模层，硅化钨层，多晶硅层和栅极氧化物层的硅衬底制造半导体器件的方法。 该方法包括用包含一氧化碳（CO）和氯（Cl2）的蚀刻剂气体蚀刻硅化钨层和多晶硅层。 蚀刻剂气体还可以包括溴化氢（HBr）或含氮气体（例如N 2）。

公开(公告)号：US20070020392A1

公开(公告)日：2007-01-25

申请号：US11528093

申请日：2006-09-26

申请人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

发明人： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak ,  Richard Yi

IPC分类号： C23C16/00 ,  B05D1/36 ,  B05D3/00

CPC分类号： C23C16/455 ,  B05D1/185 ,  B05D1/60 ,  B82Y30/00 ,  B82Y40/00 ,  C03C17/42 ,  C03C23/006 ,  C23C16/402 ,  C23C16/448

摘要： An improved vapor-phase deposition method and apparatus for the application of multilayered films/coatings on substrates is described. The method is used to deposit multilayered coatings where the thickness of an oxide-based layer in direct contact with a substrate is controlled as a function of the chemical composition of the substrate, whereby a subsequently deposited layer bonds better to the oxide-based layer. The improved method is used to deposit multilayered coatings where an oxide-based layer is deposited directly over a substrate and an organic-based layer is directly deposited over the oxide-based layer. Typically, a series of alternating layers of oxide-based layer and organic-based layer are applied.

摘要翻译： 描述了一种用于在基底上施加多层膜/涂层的改进的气相沉积方法和装置。 该方法用于沉积与衬底直接接触的氧化物基层的厚度作为衬底的化学组成的函数来控制多层涂层，由此随后沉积的层更好地结合到氧化物基层。 改进的方法用于沉积多层涂层，其中氧化物基层直接沉积在衬底上，并且基于有机的层直接沉积在基于氧化物的层上。 通常，施加一系列交替层的氧化物基层和基于有机层。