公开(公告)号：US06531408B2

公开(公告)日：2003-03-11

申请号：US09939720

申请日：2001-08-28

申请人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2131

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02631

摘要： A substrate such as a sapphire substrate or the like is set to a molecular beam epitaxy (MBE) apparatus. Next, the temperature of the substrate is elevated to the temperature which is lower than the temperature at which a predetermined ZnO based oxide semiconductor layer (i.e. function layer) is grown (S1). Then, raw materials containing oxygen radical is irradiated to the substrate to grow a buffer layer made of ZnO based oxide semiconductor (S2). Subsequently, the irradiation of oxygen radical is stopped so as to eliminate the influence of oxygen onto the buffer layer (S3). Then, the temperature of the substrate is elevated to the temperature at which the predetermined ZnO based oxide semiconductor layer is grown (S4). After that, raw materials containing oxygen radical is irradiated so as to sequentially grow a ZnO based oxide semiconductor layer as a function layer (S5). As a result, a ZnO based oxide semiconductor layer with low concentration of residual carrier can be grown, and a semiconductor light emitting device such as light emitting diode and laser diode with high light emitting characteristics can be obtained.

公开(公告)号：US06649434B2

公开(公告)日：2003-11-18

申请号：US09950831

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2120

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02472 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： In the case in which a ZnO based oxide semiconductor layer is to be hetero-epitaxially grown on a substrate formed of a material which is different from that of a ZnO based oxide semiconductor, the ZnO based oxide semiconductor layer is grown at a high temperature of 500° C. or more, and supply of oxygen is stopped and gradual cooling is carried out until a substrate temperature is lowered to 350° C. or less after the growth of the ZnO based oxide semiconductor layer is completed. As a result, it is possible to suppress the generation of dislocations or crystal defects over an epitaxial grown layer based on the atmosphere while the substrate temperature is lowered after the growth of the semiconductor layer and a difference in a coefficient of thermal expansion, thereby obtaining a semiconductor device having a high quality ZnO based oxide semiconductor layer which has an excellent crystalline property and a semiconductor light emitting device having the high characteristics.

公开(公告)号：US06638846B2

公开(公告)日：2003-10-28

申请号：US09950830

申请日：2001-09-13

申请人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Koji Matsubara ,  Akimasa Yamada ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2144

CPC分类号： H01L33/0087 ,  C30B23/02 ,  C30B29/16

摘要： A ZnO based oxide semiconductor layer is grown on a sapphire substrate 1 by supplying, for example, raw materials made of Zn and O constituting ZnO and a p-type dopant material made of N without supplying an n-type dopant material (a-step). By stopping the supply of the material of O and further supplying an n-type dopant material made of Ga, the semiconductor layer is doped with the p-type dopant and the n-type dopant, thereby forming a p-type ZnO layer (2a) (b-step). By repeating the steps (a) and (b) plural times, a p-type ZnO based oxide semiconductor layer is grown. As a result, N to be the p-type dopant can be doped in a stable carrier concentration also during high temperature growth in which a residual carrier concentration can be reduced, and the carrier concentration of the p-type layer made of the ZnO based oxide semiconductor can be increased sufficiently.

公开(公告)号：US06770913B2

公开(公告)日：2004-08-03

申请号：US10234160

申请日：2002-09-05

申请人： Kakuya Iwata ,  Shigeru Niki ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara

发明人： Kakuya Iwata ,  Shigeru Niki ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara

IPC分类号： H01L3300

CPC分类号： H01S5/327 ,  H01L33/28 ,  H01S5/021

摘要： A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.

摘要翻译： 发光器件包括硅衬底，设置在与硅衬底晶格匹配的硅衬底上的ZnOSSe层和设置在ZnOSSe层上并包括有源层的单独限制性异质结构发光层，以及 上下包层。

公开(公告)号：US06566162B2

公开(公告)日：2003-05-20

申请号：US10096668

申请日：2002-03-14

申请人： Akimasa Yamada ,  Shigeru Niki ,  Paul Fons ,  Kakuya Iwata

发明人： Akimasa Yamada ,  Shigeru Niki ,  Paul Fons ,  Kakuya Iwata

IPC分类号： H01L2120

CPC分类号： H01L31/0749 ,  H01L31/0322 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93

摘要： A method of producing a semiconductor film of Cu(MIII)(MVI)2 wherein MIII represents In1-xGax where x is between 0 and 1 and MVI represents SeyS1-y where y is between 0.5 and 1, including the steps of: (a) depositing on a substrate a precursor Cu(MIII)(MVI)2 film having a molar ratio of Cu:MIII of less than 1.0:1.0 but not less than 1.0:1.4 and (b) annealing the precursor film at a temperature of 400-500° C. in an oxygen-containing atmosphere to form a buffer layer of indium oxide and/or gallium oxide and a Cu(In1-xGax)(SeyS1-y)2 film interposed between the substrate and the buffer layer. The buffer layer may be removed by etching with an acid.

摘要翻译： 一种制备Cu（MIII）（MVI）2的半导体膜的方法，其中MIII表示In1-xGax，其中x在0和1之间，MVI表示SeyS1-y，其中y在0.5和1之间，包括以下步骤： ）在基底上沉积具有小于1.0:1.0但不小于1.0:1.4的Cu:MIII摩尔比的前体Cu（MIII）（MVI）2膜;和（b）在400℃的温度下退火前体膜 -500℃，形成氧化铟和/或氧化镓的缓冲层，以及置于衬底和缓冲层之间的Cu（In1-xGax）（SeyS1-y）2膜。 缓冲层可以用酸蚀刻除去。

公开(公告)号：US06472241B2

公开(公告)日：2002-10-29

申请号：US09939719

申请日：2001-08-28

申请人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

发明人： Kakuya Iwata ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara ,  Shigeru Niki ,  Ken Nakahara

IPC分类号： H01L2100

CPC分类号： C30B23/06 ,  H01L33/0087

摘要： The closing plates (61b), (61c) are provided on the both end portions of the cylindrical insulator body (61a), the gas introduction tube for introducing a gaseous substance is inserted into one plate (61b) of the closing plates of the plasma chamber (61) for making the gaseous substance plasmatic within it, and on the other plate (61c), the plasma radiation outlet (61d) is provided. Then, nearby the plasma jet (63) outgoing from the radiation outlet, the electrode (64) for applying a high electric field of an ion trapper is provided so as to be opposed to the grounded electrode (65) interposed the plasma jet between them. This electrode for applying a high electric field is fixed on the grounded metal plate (61e) provided on the other plate (61c) via the insulation porcelain (66) made of MgO or quartz. As a result, a radical cell device which does not blow-off and mix up Al into the layer epitaxially grown is obtained ,and a Groups II-VI compound semiconductor device because undoped Al is not contained in the semiconductor layers.

摘要翻译： 封闭板（61b），（61c）设置在圆筒形绝缘体（61a）的两端部，将用于引入气态物质的气体导入管插入等离子体的封闭板的一个板（61b） 用于在其内制备气态物质的室（61），在另一个板（61c）上设置有等离子体辐射出口（61d）。 然后，在从辐射出口排出的等离子体射流（63）附近，设置用于施加离子捕获器的高电场的电极（64），以与插入其间的等离子体射流的接地电极（65）相对 。 用于施加高电场的电极经由由MgO或石英制成的绝缘瓷（66）固定在设置在另一板（61c）上的接地金属板（61e）上。 结果，可以获得不将Al吹出和外延生长的层的自由基电池器件，由于在半导体层中不含有未掺杂的Al的II-VI族化合物半导体器件。

公开(公告)号：US06674098B1

公开(公告)日：2004-01-06

申请号：US10031931

申请日：2002-01-25

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L2715

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US20050284518A1

公开(公告)日：2005-12-29

申请号：US11159233

申请日：2005-06-23

申请人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

发明人： Akimasa Yamada ,  Hitoshi Tampo ,  Koji Matsubara ,  Shigeru Niki ,  Keiichiro Sakurai ,  Shogo Ishizuka ,  Kakuya Iwata

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0749 ,  Y02E10/541

摘要： A solar cell which comprises a back metal electrode and a light-absorbing layer comprising a p-type CIGS semiconductor on a substrate in this order, wherein the solar cell further comprises a p-type or low carrier concentration n-type semiconductor layer comprising ZnO between the light-absorbing layer and the back metal electrode, and a process for producing the solar cell.

摘要翻译： 一种太阳能电池，其特征在于，包括背面金属电极和在基板上依次包含p型CIGS半导体的光吸收层，其中所述太阳能电池还包括p型或低载流子浓度的n型半导体层，其包含ZnO 在光吸收层和背面金属电极之间，以及太阳能电池的制造方法。

公开(公告)号：US20050247954A1

公开(公告)日：2005-11-10

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00 ,  H01L33/00 ,  H01L33/28 ,  H01S5/02 ,  H01S5/323 ,  H01S5/327

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US07605012B2

公开(公告)日：2009-10-20

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。