公开(公告)号：US20100264411A1

公开(公告)日：2010-10-21

申请号：US12086882

申请日：2006-12-19

申请人： Tetsuo Fujii ,  Tetsuhiro Tanabe

发明人： Tetsuo Fujii ,  Tetsuhiro Tanabe

IPC分类号： H01L33/36

CPC分类号： H01L33/14 ,  H01L33/28

摘要： There is provided a ZnO based compound semiconductor light emitting device which can emit light with high efficiency and from an entire surface while using ZnO based compound semiconductor which can be expected with higher light emitting efficiency than that of a GaN based compound. On an insulating substrate (1), an n-type layer (2), an active layer (3), and a p-type layer (4), made of ZnO based compound semiconductor materials, are laminated, wherein a specific resistance of the n-type layer is 0.001 Ω·cm or more and 1 Ω·cm or less, and a film thickness (μm) of the n-type layer is set in a value or more calculated by a formula (specific resistance (Ω·cm))×300, and an n-side electrode (5) is formed on an exposed portion of a surface of the n-type layer opposite to a surface being in contact with the substrate and a p-side electrode (6) is formed on the p-type layer.

摘要翻译： 提供了一种ZnO基化合物半导体发光器件，其能够以比GaN基化合物更高的发光效率预期的ZnO基化合物半导体，能够高效率地发光并且从整个表面发光。 在绝缘基板（1）上层叠由ZnO系化合物半导体材料构成的n型层（2），有源层（3）和p型层（4），其中，电阻率 n型层的厚度为0.001＆OHgr·cm以上且1＆OHgr·cm以下，n型层的膜厚（μm）设定为通过公式计算的值（比电阻（ ＆OHgr;·cm））×300，并且n面电极（5）形成在与基板接触的表面相对的n型层的表面的露出部分和p侧电极（ 6）形成在p型层上。

公开(公告)号：US06670204B2

公开(公告)日：2003-12-30

申请号：US10235705

申请日：2002-09-06

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2100

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

公开(公告)号：US06469320B2

公开(公告)日：2002-10-22

申请号：US09864275

申请日：2001-05-25

申请人： Tetsuhiro Tanabe ,  Masayuki Sonobe

发明人： Tetsuhiro Tanabe ,  Masayuki Sonobe

IPC分类号： H01L2715

CPC分类号： H01L21/02395 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007

摘要： A first GaN layer (2) is formed on a substrate (1), mask layer (3) having opening parts (3a) are formed thereon, a second GaN layer (4) is selectively grown in the lateral direction from the opening parts on the mask layer, and further a nitride type compound semiconductor layered part (15) is so laminated as to form a light emitting layer. Recessed parts (3b) are formed in the upper face side of the mask layer. In other words, owing to the recessed parts in the upper face side of the mask layer, the second GaN type compound semiconductor layer (4) is grown as to form approximately parallel gap (3c) between the bottom face of the second GaN type compound semiconductor layer and the mask layer. Further, it is preferable for the mask to be formed in a manner that the opening parts for exposing the seeds are not arranged only continuous in one single direction in the entire surface of the wafer type substrate. Consequently, a nitride type compound semiconductor light emitting device can be obtained while being provided with a low dislocation density and excellent light emitting efficiency and especially a semiconductor laser with a lowered threshold current value can be obtained.

摘要翻译： 在基板（1）上形成第一GaN层（2），在其上形成具有开口部（3a）的掩模层（3），从第二GaN层（4）的开口部 掩模层和氮化物型化合物半导体层叠部分（15）进一步层叠以形成发光层。 凹陷部分（3b）形成在掩模层的上表面侧。 换句话说，由于掩模层的上表面侧的凹部，第二GaN型化合物半导体层（4）生长成在第二GaN型化合物的底面之间形成大致平行的间隙（3c） 半导体层和掩模层。 此外，优选的是，掩模形成为使得种子露出的开口部分在晶片型基板的整个表面上不能沿单一方向连续布置。 因此，可以获得具有低位错密度和优异的发光效率的氮化物型化合物半导体发光器件，并且特别是可以获得具有降低的阈值电流值的半导体激光器。

公开(公告)号：US06426967B1

公开(公告)日：2002-07-30

申请号：US09344648

申请日：1999-06-25

申请人： Tetsuhiro Tanabe

发明人： Tetsuhiro Tanabe

IPC分类号： H01S522

CPC分类号： H01S5/2231

摘要： A semiconductor laser device includes a substrate formed of GaAs. A lower electrode is formed on an underside of this substrate. The substrate has, on its top surface, a lower cladding layer, an active layer, a first upper cladding layer, an etch stop layer, a current restricting layer, a second contact layer and an upper electrode formed in this order. A second upper cladding layer is formed widthwise centrally of the current restricting layer. A first contact layer and an insulation film are formed on the second upper cladding layer. This insulation film blocks a current from flowing from the upper electrode to an end of an optical waveguide. Accordingly, a current non-injection region is provided at an end of the active layer or optical waveguide.

摘要翻译： 半导体激光器件包括由GaAs形成的衬底。 在该基板的下侧形成下电极。 基板在其顶表面上具有以下顺序形成的下包层，有源层，第一上覆层，蚀刻停止层，电流限制层，第二接触层和上电极。 第二上包层形成在电流限制层的中心的宽度方向。 第一接触层和绝缘膜形成在第二上包层上。 该绝缘膜阻止电流从上电极流到光波导的端部。 因此，在有源层或光波导的端部设置有电流的非注入区域。

公开(公告)号：US20100218723A1

公开(公告)日：2010-09-02

申请号：US12223426

申请日：2007-01-29

申请人： Takatoshi Yamamoto ,  Shinya Umemoto ,  Tetsuhiro Tanabe ,  Yoshio Nishimoto

发明人： Takatoshi Yamamoto ,  Shinya Umemoto ,  Tetsuhiro Tanabe ,  Yoshio Nishimoto

IPC分类号： C30B23/06 ,  C23C16/00

CPC分类号： C23C14/243 ,  C30B23/066

摘要： A molecular beam cell includes a crucible (2) for containing a material (29), a coil heater (3) for heating the material (29), and a side reflector (5) for reflecting the heat from the coil heater (3). The molecular beam cell further includes a base (7) supporting the crucible (2), the coil heater (3) and the side reflector (5). The base (7) is held by a disc-shaped flange (9) via a plurality of posts (20). A purge gas introduction pipe (44) for supplying purge gas (48) into the crucible (2) is provided, whereby ambient gas (36) is prevented from coming into contact with the material (29).

摘要翻译： 分子束单元包括用于容纳材料的坩埚（2），用于加热材料（29）的线圈加热器（3）和用于反射来自线圈加热器（3）的热量的侧反射器（5） 。 分子束单元还包括支撑坩埚（2）的基座（7），线圈加热器（3）和侧反射器（5）。 基座（7）经由多个柱（20）由盘形凸缘（9）保持。 提供了用于将清洗气体（48）供应到坩埚（2）中的吹扫气体导入管（44），由此防止环境气体（36）与材料（29）接触。

公开(公告)号：US07965753B2

公开(公告)日：2011-06-21

申请号：US11990843

申请日：2006-08-23

申请人： Tetsuhiro Tanabe

发明人： Tetsuhiro Tanabe

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/323 ,  H01S5/40

摘要： An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.

摘要翻译： 至少包括由例如第一导电型包覆层（2a），有源层（3a）和第二导电型包覆层（2a）构成的发光层形成部分（9a）的红外线元件（10a） 形成在半导体衬底（1）上的红色光（4a）和至少包括由例如第一导电型包层（...）构成的发光层形成部分（9b）的红色元件（10b） 2b），有源层（3b）和用于发射红光的第二导电型包覆层（4b）形成在同一半导体衬底（1）上。 它们的第二导电型包层（4a和4b）由相同的材料制成。 结果，可以使其脊部的形成处理被共同化，并且可以通过具有能够高输出操作的窗口结构分别形成两个元件。

公开(公告)号：US07605012B2

公开(公告)日：2009-10-20

申请号：US11166254

申请日：2005-06-27

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US20090034569A1

公开(公告)日：2009-02-05

申请号：US11990859

申请日：2006-08-23

申请人： Tetsuhiro Tanabe

发明人： Tetsuhiro Tanabe

IPC分类号： H01S5/026 ,  H01S5/02

CPC分类号： H01S5/22 ,  H01S5/323 ,  H01S5/40

摘要： There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer (3b) of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation without increasing the number of processes of the growth.

摘要翻译： 公开了一种单片半导体激光器，其设置有形成在半导体衬底（1）上的基于AlGaAs的半导体激光元件（10a）和基于InGaAlP的半导体激光元件（10b）。 基于AlGaAs的半导体激光元件（10a）由具有n型包覆层（2a），有源层（3a）和p型覆层（4a）的红外发光层形成部（9a） ）形成为具有脊部，以及设置在脊部的侧面的电流收缩层（5a），而InGaP基半导体激光元件（10b）由红色发光层形成部（9a）构成， 其具有形成为具有脊部的n型包覆层（2b），有源层（3b）和p型覆盖层（4b），以及设置在该侧壁上的电流收缩层（5b） 脊部。 两个元件的电流收缩层由具有比红色发光层形成部分的有源层（3b）的带隙大的带隙的相同材料制成。 因此，可以获得能够在不增加生长过程的情况下能够进行高温和高输出操作的单片半导体激光器。

公开(公告)号：US06987029B2

公开(公告)日：2006-01-17

申请号：US10713205

申请日：2003-11-17

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L21/00

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。

公开(公告)号：US06735230B1

公开(公告)日：2004-05-11

申请号：US09786337

申请日：2001-03-08

申请人： Tetsuhiro Tanabe ,  Ken Nakahara

发明人： Tetsuhiro Tanabe ,  Ken Nakahara

IPC分类号： H01S319

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/73265 ,  H01S5/021 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/32308 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： On the surface of a conductive substrate (1) of GaAs, Ge, Si, etc., a semiconductor lamination section including a light emitting layer forming portion (11) that has at least an n-type layer (4) and a p-type layer (6) made from a compound semiconductor of a Group III element and nitrogen and that is laminated so as to form a light emitting layer is formed through a buffer layer (2) suitable for the substrate. As a result, a semiconductor light emitting device using a Group III nitride compound semiconductor, which is of a vertical type that allows electrodes to be taken out from both of the upper and lower surfaces of a chip, has superior crystalline properties with high light emitting efficiency, and exhibits cleavage, is obtained. Therefore, it is possible to easily mount a LD chip on a sub-mount having a good thermal conductivity, and consequently to prevent a reduction and degradation in the light emitting efficiency (differential quantum efficiency) due to heat.

摘要翻译： 在GaAs，Ge，Si等的导电性基板（1）的表面上，具有至少具有n型层（4）和p型层的发光层形成部（11）的半导体层叠部 通过由III族元素的化合物半导体制成的并且层叠以形成发光层的层型（6）通过适合于该基板的缓冲层（2）形成。 结果，使用具有允许电极从芯片的上表面和下表面中取出的电极的垂直型III族氮化物化合物半导体的半导体发光器件具有优异的晶体性质，具有高发光 效率，并显示出裂解。 因此，可以容易地将LD芯片安装在具有良好导热性的子座上，从而防止由于热导致的发光效率（微分量子效率）的降低和劣化。