公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

申请人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

摘要： A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

摘要翻译： 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US08568606B2

公开(公告)日：2013-10-29

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C03C15/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US20100243607A1

公开(公告)日：2010-09-30

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US20090047795A1

公开(公告)日：2009-02-19

申请号：US12192388

申请日：2008-08-15

申请人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

发明人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。

公开(公告)号：US20120247677A1

公开(公告)日：2012-10-04

申请号：US13434989

申请日：2012-03-30

申请人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

发明人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

IPC分类号： H01L21/306 ,  H01L21/3065

CPC分类号： H01J37/32697 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32366 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32724 ,  H01J2237/327

摘要： A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).

摘要翻译： 提供了能够提高蚀刻处理中的处理可控性的基板处理装置。 基板处理装置（10）具有减压处理室（11）。 设置在处理室（11）中并构造成在其上安装晶片（W）的感受体（12）; HF高频电源（18），被配置为向所述基座（12）施加用于等离子体产生的高频电压; LF高频电源（20），被配置为向所述基座（12）施加偏置电压产生的高频电压; 以及直流电压施加单元（23），被配置为向所述基座（12）施加矩形波的直流电压。

公开(公告)号：US09202675B2

公开(公告)日：2015-12-01

申请号：US12718627

申请日：2010-03-05

申请人： Shinji Himori ,  Daisuke Hayashi

发明人： Shinji Himori ,  Daisuke Hayashi

IPC分类号： C23F1/08 ,  C23C16/50 ,  H01J37/32

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32577

摘要： A plasma processing apparatus includes a processing chamber in which a target object is processed by a plasma, a first and a second electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and the second electrode to supply a high frequency power to the processing chamber. And at least one of the first and the second electrode includes a base formed of a plate-shaped dielectric material and a resistor formed of a metal and provided between the base and the plasma.

摘要翻译： 等离子体处理装置包括处理室，其中目标物体由等离子体处理，第一和第二电极设置在处理室中以彼此面对并具有其间的处理空间;以及高频电源， 连接到第一和第二电极中的至少一个，以向处理室提供高频电力。 并且第一和第二电极中的至少一个包括由板状电介质材料形成的基底和由金属形成并设置在基底和等离子体之间的电阻器。

公开(公告)号：US08284538B2

公开(公告)日：2012-10-09

申请号：US11835743

申请日：2007-08-08

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01L21/687

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

摘要翻译： 静电吸盘装置包括静电吸盘部，金属基部和电介质板。 静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子， 吸附内电极。 这里，电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。

公开(公告)号：US08178444B2

公开(公告)日：2012-05-15

申请号：US12363992

申请日：2009-02-02

申请人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

发明人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/67109 ,  H01J37/32009 ,  H01J37/3255 ,  H01J37/32724 ,  H01L21/67248 ,  H01L21/6831

摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.

摘要翻译： 能够消除等离子体分布不均匀的基板处理方法。 该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板 为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。 在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

公开(公告)号：US20060221540A1

公开(公告)日：2006-10-05

申请号：US11392811

申请日：2006-03-30

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： H01T23/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.