公开(公告)号：US07892513B2

公开(公告)日：2011-02-22

申请号：US12359342

申请日：2009-01-26

申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

IPC分类号： C01B21/06

CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B19/04 ,  C30B29/406

摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含有III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。

公开(公告)号：US20100229786A1

公开(公告)日：2010-09-16

申请号：US12681624

申请日：2008-09-19

申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Ryu Hirota ,  Shinsuke Fujiwara ,  Haruko Tanaka

IPC分类号： C30B19/12

CPC分类号： C30B29/403 ,  C30B19/04

摘要： A III-nitride crystal growth method that enables growing large-scale crystal under a liquid-phase technique is made available. The present III-nitride crystal growth method is a method of growing III-nitride crystal (10) by a liquid-phase technique, and is provided with: a step of preparing a III-nitride crystal substrate (1) having the same chemical composition as the III-nitride crystal (10), and having a thickness of not less than 0.5 mm; and a step of contacting onto a major surface (1m) of the III-nitride crystal substrate (1) a solution in which a nitrogen-containing gas (5) is dissolved in a solvent (3) that includes a Group-III metal, to grow III-nitride crystal (10) onto the major surface (1m).

摘要翻译： 可以获得能够在液相技术下生长大规模晶体的III族氮化物晶体生长方法。 本III-氮化物晶体生长方法是通过液相技术生长III族氮化物晶体（10）的方法，并且具有：制备具有相同化学组成的III族氮化物晶体衬底（1）的步骤 作为III族氮化物晶体（10），并且具有不小于0.5mm的厚度; 以及将含氮气体（5）溶解在包含III族金属的溶剂（3）中的溶液与III族氮化物晶体基板（1）的主表面（1m）接触的步骤， 以将III族氮化物晶体（10）生长到主表面（1m）上。

公开(公告)号：US20100189624A1

公开(公告)日：2010-07-29

申请号：US12359342

申请日：2009-01-26

申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida ,  Ryu Hirota ,  Koji Uematsu ,  Haruko Tanaka

IPC分类号： C30B17/00 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/06 ,  C30B19/04 ,  C30B29/406

摘要： Affords group III nitride crystal growth methods enabling crystal to be grown in bulk by a liquid-phase technique. One such method of growing group III nitride crystal from solution is provided with: a step of preparing a substrate having a principal face and including at least on its principal-face side a group III nitride seed crystal having the same chemical composition as the group III nitride crystal, and whose average density of threading dislocations along the principal face being 5×106 cm−2 or less; and a step of bringing into contact with the principal face of the substrate a solution in which a nitrogen-containing gas is dissolved into a group III metal-containing solvent, to grow group III nitride crystal onto the principal face.

摘要翻译： 提供III族氮化物晶体生长方法，使得晶体能够通过液相技术在本体中生长。 提供了从溶液中生长III族氮化物晶体的一种这样的方法：制备具有主面并且至少在其主面上至少包括与III组相同的化学组成的III族氮化物晶种的基板的步骤 氮化物晶体，并且其主面上的穿透位错的平均密度为5×10 6 cm -2以下; 以及使含氮气体溶解在含III族金属的溶剂中的溶液与基板的主面接触的步骤，将III族氮化物晶体生长到主面上。

公开(公告)号：US20120031324A1

公开(公告)日：2012-02-09

申请号：US13115560

申请日：2011-05-25

申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

IPC分类号： C30B25/02

CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。

公开(公告)号：US20100139553A1

公开(公告)日：2010-06-10

申请号：US12630836

申请日：2009-12-03

申请人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

发明人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

IPC分类号： C30B25/02

CPC分类号： C30B25/20 ,  C30B29/406

摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.

摘要翻译： 提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括： 制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

公开(公告)号：US20110100292A1

公开(公告)日：2011-05-05

申请号：US13003540

申请日：2009-07-14

申请人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

发明人： Koji Uematsu ,  Hiroaki Yoshida ,  Masanori Morishita ,  Shinsuke Fujiwara

IPC分类号： C30B19/04

CPC分类号： H01L21/0254 ,  C30B9/00 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/16

摘要： A method for growing a GaN crystal includes a step of preparing a substrate (10) that includes a main surface (10m) and includes a Gax Aly In1-x-y N seed crystal (10a) including the main surface (10m) and a step of growing a GaN crystal (20) on the main surface (10m) at an atmosphere temperature of 800° C. or more and 1500° C. or less and at an atmosphere pressure of 500 atmospheres or more and less than 2000 atmospheres by bringing a solution (7) provided by dissolving (5) nitrogen in a Ga melt (3) into contact with the main surface (10m) of the substrate (10). The method further includes, after the step of preparing the substrate (10) and before the step of growing the GaN crystal (20), a step of etching the main surface (10m) of the substrate (10). Thus, a method for growing a GaN crystal having a low dislocation density and high crystallinity is provided without adding impurities other than raw materials to the melt and without increasing the size of a crystal growth apparatus.

摘要翻译： 一种用于生长GaN晶体的方法包括制备包括主表面（10m）并包括主表面（10m）的Gax Aly In 1-xy N晶种（10a）的衬底（10）的步骤和 在800℃以上且1500℃以下的气氛温度和500大气压以上且小于2000个大气压的气氛下，在主表面（10μm）上生长GaN晶体（20），通过使 通过将（5）氮在Ga熔体（3）中溶解以与衬底（10）的主表面（10m）接触而提供的溶液（7）。 该方法还包括在制备衬底（10）的步骤之后和生长GaN晶体（20）的步骤之前，蚀刻衬底（10）的主表面（10m）的步骤。 因此，提供了一种生长具有低位错密度和高结晶度的GaN晶体的方法，而不增加熔体中的原料以外的杂质，而不增加晶体生长装置的尺寸。

公开(公告)号：US09005362B2

公开(公告)日：2015-04-14

申请号：US13115560

申请日：2011-05-25

申请人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

发明人： Yuki Hiromura ,  Koji Uematsu ,  Hiroaki Yoshida ,  Shinsuke Fujiwara

IPC分类号： C30B21/02 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/02389 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substrates 10 including main surfaces 10m having a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substrates 10 so as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substrates 10 oppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystal 20 on the main surfaces 10m of the plurality of tile substrates arranged.

摘要翻译： 本发明提供一种通过使用多个瓦片基板来生长具有大尺寸并且具有少量形成在晶体的主表面中的凹坑的III族氮化物晶体的方法。 用于生长III族氮化物晶体的方法包括制备多个瓦片基板10的步骤，该瓦片基板10包括允许多个瓦片基板的二维密封的具有三角形形状的主表面10m或凸形四边形; 将多个瓦片基板10布置成二维紧密堆叠的步骤，使得在多个瓦片基板10的顶点彼此相对的任何点处，3个或更少的顶点彼此相对; 以及在布置的多个瓦片基板的主表面10m上生长III族氮化物晶体20的步骤。

公开(公告)号：US09279194B2

公开(公告)日：2016-03-08

申请号：US12630836

申请日：2009-12-03

申请人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

发明人： Hiroaki Yoshida ,  Shinsuke Fujiwara ,  Koji Uematsu ,  Masanori Morishita

IPC分类号： C30B25/20 ,  C30B29/40

CPC分类号： C30B25/20 ,  C30B29/406

摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.

摘要翻译： 提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括： 制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

公开(公告)号：US08546166B2

公开(公告)日：2013-10-01

申请号：US12324897

申请日：2008-11-28

申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida

发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida

IPC分类号： H01L21/00

CPC分类号： H01L29/32 ,  C30B19/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/025

摘要： Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm−2 to 3×106 cm−2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.

摘要翻译： 为了制造有利地用于发光器件的III族氮化物晶体衬底，以及结合了衬底的发光器件和制造发光器件的方法，III族氮化物晶体衬底具有表面积不小于10的主面 cm2，并且在从外周的主面的周缘除去与其外周的5mm间隔的主面主区域中，总位错密度为1×10 4 cm -2〜3×10 6 cm -1， 2，螺旋位错密度与总位错密度的比率为0.5以上。

公开(公告)号：US20090140287A1

公开(公告)日：2009-06-04

申请号：US12324897

申请日：2008-11-28

申请人： Shinsuke Fujiwara ,  Hiroaki Yoshida

发明人： Shinsuke Fujiwara ,  Hiroaki Yoshida

IPC分类号： H01L29/20 ,  H01L33/00

CPC分类号： H01L29/32 ,  C30B19/02 ,  C30B23/02 ,  C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02658 ,  H01L33/0075 ,  H01L33/025

摘要： Toward making available III nitride crystal substrates advantageously employed in light-emitting devices, and light-emitting devices incorporating the substrates and methods of manufacturing the light-emitting devices, a III nitride crystal substrate has a major face whose surface area is not less than 10 cm2 and, in a major-face principal region excluding the peripheral margin of the major face from its outer periphery to a 5 mm separation from its outer periphery, the total dislocation density is from 1×104 cm−2 to 3×106 cm−2, and the ratio of screw-dislocation density to the total dislocation density is 0.5 or greater.

摘要翻译： 为了制造有利地用于发光器件的III族氮化物晶体衬底，以及结合了衬底的发光器件和制造发光器件的方法，III族氮化物晶体衬底具有表面积不小于10的主面 cm2，并且在从主外表面的外表面的外周边缘除了与其外周分隔5mm之外的主面主要区域中，总位错密度为1×104cm -2至3×106cm-2， 螺旋位错密度与总位错密度的比值为0.5以上。