公开(公告)号：US07796495B2

公开(公告)日：2010-09-14

申请号：US11198113

申请日：2005-08-05

申请人： Akira Tsukihashi ,  Tsuyoshi Yamamoto ,  Satoru Miyoshi ,  Shinichi Nakahashi

发明人： Akira Tsukihashi ,  Tsuyoshi Yamamoto ,  Satoru Miyoshi ,  Shinichi Nakahashi

IPC分类号： G11B3/70 ,  G11B5/84 ,  G11B7/26 ,  G11B7/20 ,  G01D15/14 ,  B41J2/435

CPC分类号： G11B7/0037 ,  G11B7/24038 ,  G11B7/24062 ,  G11B7/24094

摘要： An optical disk comprising two layers including a signal recording layer and an image recording layer further comprises a metal reflective layer formed on a surface of the image recording layer on the incidence side of laser light. The image recording layer is capable of forming a visible image in response to an increase in temperature caused by application of laser light to the metal reflective layer. The visible image is capable of being visually observed from a side opposite to the incidence side.

摘要翻译： 包括信号记录层和图像记录层的两层的光盘还包括在激光的入射侧的图像记录层的表面上形成的金属反射层。 响应于通过对金属反射层施加激光而引起的温度升高，图像记录层能够形成可见图像。 可视图像能够从与入射侧相反的一侧目视观察。

公开(公告)号：US20060028967A1

公开(公告)日：2006-02-09

申请号：US11198113

申请日：2005-08-05

申请人： Akira Tsukihashi ,  Tsuyoshi Yamamoto ,  Satoru Miyoshi ,  Shinichi Nakahashi

发明人： Akira Tsukihashi ,  Tsuyoshi Yamamoto ,  Satoru Miyoshi ,  Shinichi Nakahashi

IPC分类号： G11B7/24

CPC分类号： G11B7/0037 ,  G11B7/24038 ,  G11B7/24062 ,  G11B7/24094

摘要： An optical disk comprising two layers including a signal recording layer and an image recording layer further comprises a metal reflective layer formed on a surface of the image recording layer on the incidence side of laser light. The image recording layer is capable of forming a visible image in response to an increase in temperature caused by application of laser light to the metal reflective layer. The visible image is capable of being visually observed from a side opposite to the incidence side.

摘要翻译： 包括信号记录层和图像记录层的两层的光盘还包括在激光的入射侧的图像记录层的表面上形成的金属反射层。 响应于通过对金属反射层施加激光而引起的温度升高，图像记录层能够形成可见图像。 可视图像能够从与入射侧相反的一侧目视观察。

公开(公告)号：US20060151605A1

公开(公告)日：2006-07-13

申请号：US11324409

申请日：2006-01-03

申请人： Satoru Miyoshi ,  Akira Tsukihashi

发明人： Satoru Miyoshi ,  Akira Tsukihashi

IPC分类号： G06K7/10

CPC分类号： G11B7/0037 ,  G11B7/1275 ,  G11B7/24038 ,  G11B2007/0006

摘要： One of a first laser driver and a second laser driver for respectively driving a first laser light source and a second laser light source is selected according to a type of storage media constituting an object of processing, drive pulses are generated from that laser driver based on label information, and label information is written to a label layer of the storage media, constituting an object of processing, using laser light output by driving a laser light source with these drive pulses.

摘要翻译： 根据构成处理对象的存储介质的类型，选择分别驱动第一激光光源和第二激光光源的第一激光驱动器和第二激光驱动器之一，基于该激光驱动器生成驱动脉冲 标签信息和标签信息通过使用通过用这些驱动脉冲驱动激光光源而输出的激光来写入构成处理对象的存储介质的标签层。

公开(公告)号：US5789788A

公开(公告)日：1998-08-04

申请号：US754615

申请日：1996-11-20

申请人： Taiji Ema ,  Satoru Miyoshi ,  Tatsumi Tsutsui ,  Masaya Katayama ,  Masayoshi Asano ,  Kenichi Kanazawa

发明人： Taiji Ema ,  Satoru Miyoshi ,  Tatsumi Tsutsui ,  Masaya Katayama ,  Masayoshi Asano ,  Kenichi Kanazawa

IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/76 ,  H01L29/00

CPC分类号： H01L27/0928

摘要： Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.

摘要翻译： n型和p型阱形成在p型衬底中。 p型阱也形成在n型阱中。 同时通过相同的工艺形成p型阱，以使MOS晶体管具有不同的阈值电压。 在n阱的p阱中形成具有长栅极长度和低阈值电压的MOS晶体管，并且在p阱的外部形成具有短栅极长度和高阈值电压的MOS晶体管 n-well 保险丝以高密度形成在n型阱中的p型阱上。

公开(公告)号：US06320240B1

公开(公告)日：2001-11-20

申请号：US09505063

申请日：2000-02-16

申请人： Satoru Miyoshi

发明人： Satoru Miyoshi

IPC分类号： H01L2900

CPC分类号： H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a semiconductor device which can prevent short-circuit of the contact plugs and prevent exposure of wirings to ensure sufficient reliability even if level difference is caused in device isolation regions, and a method of manufacturing the same. Device isolation regions 13 are formed on a semiconductor substrate 11 to partition the semiconductor substrate 11 into a plurality of device regions 12. Then, word lines 14 are formed on the semiconductor substrate 11, and then peripheral regions of the word lines 14 are covered with a protection film. Then, impurity diffusion regions formed in the device regions 12, and then a plug insulating film is formed on an overall upper surface of the substrate 11. Then, opening portions 18a for connecting end portions of the device regions 12 are formed in the plug insulating film. Then, a conductive film is buried in the opening portions 18a, and then the conductive film and the plug insulating film are polished by the CMP method until any one of the protection film on the device isolation regions 13 and the protection film on the device regions 12 is exposed.

摘要翻译： 提供了一种半导体器件及其制造方法，其可以防止接触插头的短路并且防止布线的暴露以确保即使在器件隔离区域中产生电平差异也具有足够的可靠性。 器件隔离区域13形成在半导体衬底11上以将半导体衬底11分隔成多个器件区域12.然后，在半导体衬底11上形成字线14，然后用字线14的外围区域覆盖 保护膜。 然后，在基板11的整个上表面上形成在器件区域12中形成的杂质扩散区域，然后形成插塞绝缘膜。然后，用于连接器件区域12的端部的开口部分18a形成在插塞绝缘 电影。 然后，将导电膜埋设在开口部分18a中，然后通过CMP方法抛光导电膜和插塞绝缘膜，直到器件隔离区域13上的保护膜和器件区域上的保护膜 12暴露。

公开(公告)号：US5339673A

公开(公告)日：1994-08-23

申请号：US34676

申请日：1993-03-19

申请人： Kazuya Nakagawa ,  Satoru Miyoshi ,  Toyoaki Fukushima

发明人： Kazuya Nakagawa ,  Satoru Miyoshi ,  Toyoaki Fukushima

IPC分类号： G01N30/10 ,  G01N30/12 ,  G01N30/32 ,  G01N30/62 ,  G01N30/88

CPC分类号： G01N30/10 ,  G01N2030/127 ,  G01N2030/324 ,  G01N2030/8804

摘要： A gas chromatograph for operation in split mode is controlled by calculating the column flow rate and the total carrier gas flow rate from the length and inner diameter of the column and specified values for temperature and column inlet pressure, adjusting the split flow rate such that the pressure value measured by a pressure sensor becomes equal to the specified pressure value and control the total carrier flow rate to be equal to the calculated value therefor. In this manner, the split ratio of the gas chromatograph can be maintained easily at a specified value. The amount of carrier gas to be wasted can be significantly reduced by appropriately varying the split ratio with time during the course of an analysis.

摘要翻译： 通过从柱的长度和内径计算柱流速和总载气流量，控制温度和塔入口压力的规定值，调整分流流量，使得 由压力传感器测量的压力值等于指定压力值，并将总载波流量控制为等于其计算值。 以这种方式，可以容易地将气相色谱仪的分流比保持在规定值。 通过在分析过程中适当地改变分流比随时间，可以显着降低要浪费的载气量。

公开(公告)号：US08270902B2

公开(公告)日：2012-09-18

申请号：US12484745

申请日：2009-06-15

申请人： Kazuo Hasegawa ,  Hirohisa Suzuki ,  Satoru Miyoshi ,  Kazuya Kogure

发明人： Kazuo Hasegawa ,  Hirohisa Suzuki ,  Satoru Miyoshi ,  Kazuya Kogure

IPC分类号： H04B5/00 ,  H04B7/00 ,  H04M1/00

CPC分类号： H04B13/005

摘要： A communication system is provided comprising an environment-side electrode and a living body-side electrode sandwiching an insulating layer and electrically insulated from each other, a grounding electrode which is electrically connected to the environment-side electrode, and a reception amplifier which amplifies a potential difference between the environment-side electrode and the living body-side electrode, wherein the grounding electrode has a side surface section which extends along a vertical direction.

摘要翻译： 提供了一种通信系统，其包括环境侧电极和夹持绝缘层并且彼此电绝缘的生物体侧电极，电连接到环境侧电极的接地电极和放大一个 环境侧电极与生物体侧电极之间的电位差，其中接地电极具有沿着垂直方向延伸的侧表面部分。

公开(公告)号：US06326254B1

公开(公告)日：2001-12-04

申请号：US09070786

申请日：1998-05-01

申请人： Taiji Ema ,  Satoru Miyoshi ,  Tatsumi Tsutsui ,  Masaya Katayama ,  Masayoshi Asano ,  Kenichi Kanazawa

发明人： Taiji Ema ,  Satoru Miyoshi ,  Tatsumi Tsutsui ,  Masaya Katayama ,  Masayoshi Asano ,  Kenichi Kanazawa

IPC分类号： H01L218238

CPC分类号： H01L27/0928

摘要： Wells of n- and p-type are formed in a p-type substrate. Wells of p-type are also formed in the n-type well. Both the p-type wells are formed by the same process at the same time to make MOS transistors have different threshold voltages. MOS transistors having a long gate length and a low threshold voltage are formed in the p-well in the n-well, and MOS transistors having a short gate length and a high threshold voltage are formed in the p-well at the outside of the n-well. Fuses are formed over the p-type wells in the n-type well at a high density.

摘要翻译： n型和p型阱形成在p型衬底中。 p型阱也形成在n型阱中。 同时通过相同的工艺形成p型阱，以使MOS晶体管具有不同的阈值电压。 在n阱的p阱中形成具有长栅极长度和低阈值电压的MOS晶体管，并且在栅极外部的p阱中形成具有短栅极长度和高阈值电压的MOS晶体管 n-well 保险丝以高密度形成在n型阱中的p型阱上。

公开(公告)号：US5803951A

公开(公告)日：1998-09-08

申请号：US826623

申请日：1997-04-03

申请人： Toyohito Wada ,  Kazuya Nakagawa ,  Satoru Miyoshi ,  Hiroyuki Tsujiide

发明人： Toyohito Wada ,  Kazuya Nakagawa ,  Satoru Miyoshi ,  Hiroyuki Tsujiide

IPC分类号： G01N30/12 ,  G01N30/02 ,  G01N30/10 ,  G01N30/32 ,  B01D15/08

CPC分类号： G01N30/32 ,  G01N2030/025 ,  G01N2030/127 ,  G01N30/10

摘要： A gas chromatograph has a control unit which normally carries out a pressure control so as to keep the pressure inside the vaporization chamber at a specified target level while the flow rate of a carrier gas into the vaporization chamber is kept constant. When a liquid sample is injected to cause a sudden rise in the pressure, the normal pressure control is temporarily stopped, say, for keeping the split ratio unchanged. In order to keep unchanged the retention time for components being analyzed although the pressure inside the vaporization chamber rises, the target value for the pressure control is reduced for an appropriate length of time after the temporary stopping of pressure control is discontinued.

摘要翻译： 气相色谱仪具有通常执行压力控制的控制单元，以便将进入汽化室的载气的流量保持恒定，从而将蒸发室内的压力保持在指定的目标水平。 当注入液体样品以引起压力突然升高时，暂时停止常压控制，例如为了保持分流比不变。 为了保持分析部件的保持时间，尽管蒸发室内的压力升高，但是在暂时停止压力控制之后，压力控制的目标值减少了适当的时间长度。

公开(公告)号：US5391221A

公开(公告)日：1995-02-21

申请号：US34677

申请日：1993-03-19

申请人： Toyoaki Fukushima ,  Kazuya Nakagawa ,  Masahito Ueda ,  Satoru Miyoshi

发明人： Toyoaki Fukushima ,  Kazuya Nakagawa ,  Masahito Ueda ,  Satoru Miyoshi

IPC分类号： G01N30/02 ,  G01N30/10 ,  G01N30/26 ,  G01N30/32 ,  B01D15/08

CPC分类号： G01N30/10 ,  G01N2030/025 ,  G01N2030/324

摘要： A gas chromatograph for operation selectably in both split mode and splitless wide bore injection mode includes a capillary column, a sample injection chamber at the inlet of the column, a three-way valve, a first piping line connected between one of the two outlets of the three-way valve and the sample injection chamber, a split line connected to the sample injection chamber immediately upstream of the inlet of the column for discharging therethrough a portion of a gas being sent out from the sample injection chamber, a second piping line connected between the other of the outlets of the three-way valve and the split line, and a third piping line connected between the first and second piping lines. By properly controlling the total carrier gas flow rate and the column inlet pressure, the split ratio can be controlled easily. By varying the split ratio appropriately during an analysis, the amount of the carrier gas to be wasted in the case of a split mode of operation can be significantly reduced.

摘要翻译： 一种用于在分流模式和不分流宽孔喷射模式中选择性地操作的气相色谱仪包括毛细管柱，柱的入口处的样品注射室，三通阀，连接在两个出口之一的第一管线 所述三通阀和所述样品注入室，分隔线连接到所述塔的入口紧邻上游的所述样品注入室，用于从所述样品注射室排出一部分气体，连接第二管线 在三通阀的另一个出口和分流管之间，以及连接在第一和第二管道之间的第三管线。 通过适当地控制总载气流量和柱入口压力，可以容易地控制分流比。 通过在分析中适当地改变分流比，可以显着地减少在分割操作模式的情况下被浪费的载气量。