公开(公告)号：US20110250504A1

公开(公告)日：2011-10-13

申请号：US13164826

申请日：2011-06-21

申请人： Toshikazu HAMAMOTO ,  Akira UEKI ,  Koji ABE ,  Kazuhiro MIYOSHI

发明人： Toshikazu HAMAMOTO ,  Akira UEKI ,  Koji ABE ,  Kazuhiro MIYOSHI

IPC分类号： H01M10/26

CPC分类号： H01M10/0567 ,  H01M4/382 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/0564 ,  H01M10/4235 ,  H01M10/44 ,  H01M2300/004 ,  H01M2300/0042

摘要： The sudden generation of heat being frequently caused in the case of the overcharge of a lithium secondary cell which have a positive electrode comprising a composite metal oxide of lithium and cobalt or a composite metal oxide of lithium and nickel, a negative electrode comprising metallic lithium, a lithium alloy or a material capable of occluding and releasing lithium, and a nonaqueous electrolyte solution comprising a nonaqueous solvent and an electrolyte dissolved therein can be efficiently prevented by the addition, to the nonaqueous electrolyte solution, of an organic compound which, when the lithium secondary cell is overcharged, decomposes into a decomposition product capable of dissolving out the cobalt or nickel contained in the positive electrode and depositing it ion the negative electrode (for example, a tert-alkylbenzene derivative).

摘要翻译： 在具有包含锂和钴的复合金属氧化物或锂或镍的复合金属氧化物的正极的锂二次电池的过充电的情况下，常常引起热的突然产生，包含金属锂的负极， 可以通过向非水电解液中添加有机化合物来有效地防止锂离子或能够吸留和释放锂的材料，以及非水溶剂和电解质溶解在其中的非水电解质溶液， 二次电池过充电，分解成能够溶解正极中所含的钴或镍的分解产物，并将其沉积在负极（例如，叔烷基苯衍生物）上。

公开(公告)号：US20110175233A1

公开(公告)日：2011-07-21

申请号：US12983039

申请日：2010-12-31

申请人： Akira UEKI

发明人： Akira UEKI

IPC分类号： H01L23/528 ,  H01L21/768

CPC分类号： H01L23/53295 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device includes the steps of: forming a mask material film on an insulating film that is formed over a semiconductor substrate and then forming a mask pattern having a first trench formation opening and a second trench formation opening from the mask material film; forming, on the mask material film, a resist pattern having a third trench formation opening that exposes the first trench formation opening and covering the second trench formation opening; forming a first trench in the insulating film using the resist pattern and the mask pattern; and forming a second trench in the insulating film using the mask pattern after removing the resist pattern.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在形成在半导体衬底上的绝缘膜上形成掩模材料膜，然后从掩模材料形成具有第一沟槽形成开口和第二沟槽形成开口的掩模图案 电影; 在所述掩模材料膜上形成具有第三沟槽形成开口的抗蚀剂图案，所述第三沟槽形成开口暴露所述第一沟槽形成开口并覆盖所述第二沟槽形成开口; 使用抗蚀剂图案和掩模图案在绝缘膜中形成第一沟槽; 以及在除去抗蚀剂图案之后，使用掩模图案在绝缘膜中形成第二沟槽。

公开(公告)号：US20090278261A1

公开(公告)日：2009-11-12

申请号：US12437944

申请日：2009-05-08

申请人： Takeshi HARADA ,  Junichi SHIBATA ,  Akira UEKI

发明人： Takeshi HARADA ,  Junichi SHIBATA ,  Akira UEKI

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions.

摘要翻译： 在半导体衬底的上表面上形成层间绝缘膜，在层间绝缘膜中形成下层布线。 衬层绝缘膜形成在层间绝缘膜和下层互连的上表面上。 在衬垫绝缘膜的上表面上形成层间绝缘膜。 在层间绝缘膜中形成上层布线。 下层互连和上层互连通过通孔彼此连接。 形成在通孔相邻区域中的衬垫绝缘膜的部分具有比形成在通孔相邻区域之外的部分更大的厚度。

公开(公告)号：US20100219571A1

公开(公告)日：2010-09-02

申请号：US12779234

申请日：2010-05-13

申请人： Akira UEKI ,  Hironori ADACHI

发明人： Akira UEKI ,  Hironori ADACHI

IPC分类号： F16F13/08

CPC分类号： F16F13/105

摘要： A vibration isolator which is capable of stably opening and closing an orifice is provided at low manufacturing cost. A plunger for opening and closing an idle orifice is disposed in a manner that is slidably engaged with the inner wall surface of an orifice-forming member. A shaft portion extending downward is formed in the central portion of the plunger. A convex portion which is formed with a through-hole in which the shaft portion is slidably is provided on the bottom of the orifice-forming member so as to provide a bearing portion. The shaft portion of the plunger and the bearing portion of the orifice-forming member constitute a guide member for guiding the reciprocating motion of this plunger.

摘要翻译： 能够以低制造成本提供能够稳定地打开和关闭孔口的隔振器。 用于打开和关闭空闲孔的柱塞以与孔口形成构件的内壁表面可滑动地接合的方式设置。 在柱塞的中心部分形成有向下延伸的轴部。 在孔形成构件的底部设置有形成有可滑动轴部的通孔的凸部，以提供轴承部分。 柱塞的轴部和孔口形成部件的轴承部分构成用于引导该柱塞的往复运动的引导部件。

公开(公告)号：US20130056349A1

公开(公告)日：2013-03-07

申请号：US13600812

申请日：2012-08-31

申请人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

发明人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

IPC分类号： C23C14/08 ,  C23C14/35

CPC分类号： C23C14/082 ,  C23C14/3414 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

摘要翻译： 提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

公开(公告)号：US20090302473A1

公开(公告)日：2009-12-10

申请号：US12539852

申请日：2009-08-12

申请人： Junichi SHIBATA ,  Takeshi HARADA ,  Akira UEKI

发明人： Junichi SHIBATA ,  Takeshi HARADA ,  Akira UEKI

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween.

摘要翻译： 半导体器件包括：形成在半导体衬底上的第一层间绝缘膜; 形成在所述第一层间绝缘膜中的多个互连; 以及形成在第一层间绝缘膜中以连接到多个互连中的至少一个的通孔和虚设通孔。 在第一层间绝缘膜中的相邻的互连之间选择性地形成空隙。 虚拟通孔形成在与空隙接触的互连件下，以便连接到互连。 通孔和虚设通孔被第一层间绝缘膜围绕，其间没有空隙。

公开(公告)号：US20080254367A1

公开(公告)日：2008-10-16

申请号：US11948617

申请日：2007-11-30

申请人： Toshikazu HAMAMOTO ,  Akira UEKI ,  Koji ABE ,  Kazuhiro MIYOSHI

发明人： Toshikazu HAMAMOTO ,  Akira UEKI ,  Koji ABE ,  Kazuhiro MIYOSHI

IPC分类号： H01M4/00

CPC分类号： H01M10/0567 ,  H01M4/382 ,  H01M4/525 ,  H01M10/0525 ,  H01M10/0564 ,  H01M10/4235 ,  H01M10/44 ,  H01M2300/004 ,  H01M2300/0042

摘要： The sudden generation of heat being frequently caused in the case of the overcharge of a lithium secondary cell which have a positive electrode comprising a composite metal oxide of lithium and cobalt or a composite metal oxide of lithium and nickel, a negative electrode comprising metallic lithium, a lithium alloy or a material capable of occluding and releasing lithium, and a nonaqueous electrolyte solution comprising a nonaqueous solvent and an electrolyte dissolved therein can be efficiently prevented by the addition, to the nonaqueous electrolyte solution, of an organic compound which, when the lithium secondary cell is overcharged, decomposes into a decomposition product capable of dissolving out the cobalt or nickel contained in the positive electrode and depositing it ion the negative electrode (for example, a tert-alkylbenzene derivative).

摘要翻译： 在具有包含锂和钴的复合金属氧化物或锂或镍的复合金属氧化物的正极的锂二次电池的过充电的情况下，常常引起热的突然产生，包含金属锂的负极， 可以通过向非水电解液中添加有机化合物来有效地防止锂离子或能够吸留和释放锂的材料，以及非水溶剂和电解质溶解在其中的非水电解质溶液， 二次电池过充电，分解成能够溶解正极中所含的钴或镍的分解产物，并将其沉积在负极（例如，叔烷基苯衍生物）上。