公开(公告)号：US5438951A

公开(公告)日：1995-08-08

申请号：US169204

申请日：1993-12-20

申请人： Akiyoshi Tachikawa ,  Aiji Jono ,  Takashi Aigo ,  Akihiro Moritani

发明人： Akiyoshi Tachikawa ,  Aiji Jono ,  Takashi Aigo ,  Akihiro Moritani

IPC分类号： H01L21/20 ,  C30B25/02

CPC分类号： H01L21/02661 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S438/933

摘要： A technique of heteroepitaxially growing compound semiconductor on a silicon wafer, which can simplify the growth sequence, and improve the productivity and the surface morphology of a growth film. In growing compound semiconductor on a silicon wafer, the growth sequence such as shown in FIG. 1 is used. A necessary thin buffer layer is continuously grown at the temperature raising period up to the crystal growth temperature. Therefore, an independent process of growing a buffer layer at a lower temperature is not necessary, and the surface morphology is also improved by this method of growing compound semiconductor on a silicon wafer.

摘要翻译： 在硅晶片上异质外延生长化合物半导体的技术，其可以简化生长顺序，并且提高生长膜的生产率和表面形态。 在硅晶片上生长的化合物半导体中，生长顺序如图1所示。 1。 必要的薄缓冲层在升温阶段连续生长直至晶体生长温度。 因此，不需要在较低温度下生长缓冲层的独立工艺，并且通过在硅晶片上生长化合物半导体的方法也可以改善表面形态。

公开(公告)号：US5833749A

公开(公告)日：1998-11-10

申请号：US585505

申请日：1996-01-16

申请人： Akihiro Moritani ,  Aiji Yabe ,  Akiyoshi Tachikawa ,  Takashi Aigo

发明人： Akihiro Moritani ,  Aiji Yabe ,  Akiyoshi Tachikawa ,  Takashi Aigo

IPC分类号： C30B25/18 ,  G01Q60/00 ,  G01Q90/00 ,  H01L21/20 ,  H01L21/338 ,  H01L29/04 ,  H01L29/10

CPC分类号： B82Y15/00 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/045 ,  H01L29/1075 ,  H01L29/66863 ,  Y10S117/902

摘要： A compound semiconductor substrate having at least one compound semiconductor layer epitaxially grown on a silicon single crystal substrate, wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxially grown, the surface being inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; and the compound semiconductor layer has a free or top surface having a roughness of 3 nm or less in terms of a mean square roughness, Rms, determined by an atomic force microscopic measurement in a view field area of 10 .mu.m.times.10 .mu.m or a roughness of 10.5 nm or less in terms of a maximum height difference, Ry. The compound semiconductor substrate is produced by a process comprising the steps of: preparing a silicon single crystal substrate having a surface inclined at an off angle of not more than 1 deg to a (100) plane of silicon crystal; forming a buffer layer of a first compound semiconductor layer having a thickness of 5 nm to 15 nm on the surface of the silicon single crystal substrate; and epitaxially growing a second compound semiconductor layer on the buffer layer.

摘要翻译： 一种化合物半导体衬底，具有在硅单晶衬底上外延生长的至少一种化合物半导体层，其中所述硅单晶衬底具有外延生长所述化合物半导体层的表面，所述表面以不大于的角度倾斜 比硅晶体的（100）平面大1deg; 并且化合物半导体层具有以平均粗糙度表示的粗糙度为3nm以下的游离或顶面，通过在10m×10μm的视场面积中的原子力显微镜测定得到的Rms，或者粗糙度 在最大高差方面为10.5nm以下。 化合物半导体衬底通过包括以下步骤的方法制造：制备具有倾斜于硅晶体的（100）面的不大于1度的偏离角的表面的硅单晶衬底; 在所述硅单晶衬底的表面上形成厚度为5nm至15nm的第一化合物半导体层的缓冲层; 并在缓冲层上外延生长第二化合物半导体层。