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    In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
    3.
    发明申请
    In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction 有权
    原位绝对测量过程和膜厚度，膜去除率和去除端点预测的装置

    公开(公告)号：US20060082785A1

    公开(公告)日：2006-04-20

    申请号：US11053731

    申请日：2005-02-08

    申请人： Alan Janos ,  Montien Saubhayana

    发明人： Alan Janos ,  Montien Saubhayana

    IPC分类号： G01B11/28 ,  G01B11/02

    CPC分类号： G01B11/0675 ,  G03F7/427 ,  H01J37/32935 ,  H01L22/26

    摘要： An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

    摘要翻译： 用于薄膜厚度，灰分速率和终点的原位测量的装置和方法通常包括产生和测量浅角度干涉图案。 该装置通常包括具有第一观察口和第二观察口的室。 第一观察端口包括接收光学元件，其构造成从其中处理的基板的表面接收浅角度的光。 第二端口包括宽带照明源，并且优选地设置在与接收光学器件相对的侧壁中。 该过程包括从干涉图案计算薄膜厚度，灰分速率和终点。

    In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
    4.
    发明授权
    In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction 有权
    原位绝对测量过程和膜厚度，膜去除率和去除端点预测的装置

    公开(公告)号：US07821655B2

    公开(公告)日：2010-10-26

    申请号：US11053731

    申请日：2005-02-08

    申请人： Alan Janos ,  Montien Saubhayana

    发明人： Alan Janos ,  Montien Saubhayana

    IPC分类号： G01B11/28

    CPC分类号： G01B11/0675 ,  G03F7/427 ,  H01J37/32935 ,  H01L22/26

    摘要： An apparatus and process for in-situ measurement of thin film thickness, ash rate, and end point generally include generating and measuring shallow angle interference patterns. The apparatus generally includes a chamber having a first viewing port and a second viewing port. The first viewing port includes receiving optics configured to receive light at a shallow angle from a surface of a substrate processed therein. The second port includes a broadband illumination source and is preferably disposed in a sidewall opposite the receiving optics. The process includes calculating the thin film thickness, ash rate, and end point from the interference patterns.

    摘要翻译： 用于薄膜厚度，灰分速率和终点的原位测量的装置和方法通常包括产生和测量浅角度干涉图案。 该装置通常包括具有第一观察口和第二观察口的室。 第一观察端口包括接收光学元件，其构造成从其中处理的基板的表面接收浅角度的光。 第二端口包括宽带照明源，并且优选地设置在与接收光学器件相对的侧壁中。 该过程包括从干涉图案计算薄膜厚度，灰分速率和终点。

    Apparatus and process for treating dielectric materials
    5.
    发明申请
    Apparatus and process for treating dielectric materials 失效
    用于处理电介质材料的设备和工艺

    公开(公告)号：US20060141806A1

    公开(公告)日：2006-06-29

    申请号：US11155525

    申请日：2005-06-17

    申请人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    发明人： Carlo Waldfried ,  Christopher Garmer ,  Orlando Escorcia ,  Ivan Berry ,  Palani Sakthivel ,  Alan Janos

    IPC分类号： C23C16/00 ,  H01L21/31 ,  H01L21/26

    CPC分类号： H01L21/02348 ,  H01L21/02334 ,  H01L21/312 ,  H01L21/324 ,  Y10S134/902

    摘要： Apparatuses and processes for treating dielectric materials such as low k dielectric materials, premetal dielectric materials, barrier layers, and the like, generally comprise a radiation source module, a process chamber module coupled to the radiation source module; and a loadlock chamber module in operative communication with the process chamber and a wafer handler. The atmosphere of each one of the modules can be controlled as may be desired for different types of dielectric materials. The radiation source module includes a reflector, an ultraviolet radiation source, and a plate transmissive to the wavelengths of about 150 nm to about 300 nm, to define a sealed interior region, wherein the sealed interior region is in fluid communication with a fluid source.

    摘要翻译： 用于处理诸如低k电介质材料，金属前介电材料，阻挡层等的电介质材料的设备和方法通常包括辐射源模块，耦合到辐射源模块的处理室模块; 以及与处理室和晶片处理器可操作地连通的负载锁定室模块。 可以根据不同类型的介电材料的需要来控制每个模块的气氛。 辐射源模块包括反射器，紫外线辐射源和可以对大约150nm至大约300nm的波长透射的板，以限定密封的内部区域，其中密封的内部区域与流体源流体连通。