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    MEMS device and interconnects for same
    1.
    发明申请
    MEMS device and interconnects for same 失效
    MEMS器件和互连相同

    公开(公告)号：US20070103028A1

    公开(公告)日：2007-05-10

    申请号：US11540485

    申请日：2006-09-29

    申请人： Alan Lewis ,  Manish Kothari ,  John Batey ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Gregory U'Ren ,  Stephen Zee

    发明人： Alan Lewis ,  Manish Kothari ,  John Batey ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Gregory U'Ren ,  Stephen Zee

    IPC分类号： H02N11/00

    CPC分类号： B81B7/0006 ,  B81B7/007 ,  B81B2201/047 ,  G02B26/001 ,  H02N1/006

    摘要： A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.

    摘要翻译： 一种微机电系统装置，其具有在所述装置外部的电路和所述装置内的电极和可移动​​层中的至少一个之间的电互连。 电互连的至少一部分由与电极和器件的机械层之间的导电层相同的材料形成。 在一个实施例中，该导电层是牺牲层，其随后被去除以在电极和可移动​​层之间形成空腔。 牺牲层优选由钼，掺杂硅，钨或钛形成。 根据另一实施例，导电层是优选包括铝的可移动反射层。

    MEMS device and interconnects for same
    2.
    发明授权
    MEMS device and interconnects for same 失效
    MEMS器件和互连相同

    公开(公告)号：US07580172B2

    公开(公告)日：2009-08-25

    申请号：US11540485

    申请日：2006-09-29

    申请人： Alan G. Lewis ,  Manish Kothari ,  John Batey ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Gregory D. U'Ren ,  Stephen Zee

    发明人： Alan G. Lewis ,  Manish Kothari ,  John Batey ,  Teruo Sasagawa ,  Ming-Hau Tung ,  Gregory D. U'Ren ,  Stephen Zee

    IPC分类号： G02F1/03 ,  G02B26/00

    CPC分类号： B81B7/0006 ,  B81B7/007 ,  B81B2201/047 ,  G02B26/001 ,  H02N1/006

    摘要： A microelectromechanical systems device having an electrical interconnect between circuitry outside the device and at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a conductive layer between the electrode and a mechanical layer of the device. In an embodiment, this conductive layer is a sacrificial layer that is subsequently removed to form a cavity between the electrode and the movable layer. The sacrificial layer is preferably formed of molybdenum, doped silicon, tungsten, or titanium. According to another embodiment, the conductive layer is a movable reflective layer that preferably comprises aluminum.

    摘要翻译： 一种微机电系统装置，其具有在所述装置外部的电路和所述装置内的电极和可移动​​层中的至少一个之间的电互连。 电互连的至少一部分由与电极和器件的机械层之间的导电层相同的材料形成。 在一个实施例中，该导电层是牺牲层，其随后被去除以在电极和可移动​​层之间形成空腔。 牺牲层优选由钼，掺杂硅，钨或钛形成。 根据另一实施例，导电层是优选包括铝的可移动反射层。

    Electromechanical devices having support structures
    3.
    发明授权
    Electromechanical devices having support structures 有权
    具有支撑结构的机电装置

    公开(公告)号：US08344470B2

    公开(公告)日：2013-01-01

    申请号：US13099221

    申请日：2011-05-02

    申请人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    发明人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    IPC分类号： H01L31/0232

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，可以使用铆钉和柱。 在某些实施方案中，这些支撑结构由诸如金属或氧化物的刚性无机材料形成。 在某些实施例中，还可以沉积蚀刻阻挡层以促进材料在形成相对于MEMS器件内的其它部件不能选择性蚀刻的支撑结构的形成中的使用。

    MEMS devices having overlying support structures
    4.
    发明授权
    MEMS devices having overlying support structures 有权
    具有上覆支撑结构的MEMS器件

    公开(公告)号：US08120125B2

    公开(公告)日：2012-02-21

    申请号：US13012538

    申请日：2011-01-24

    申请人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    发明人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC分类号： H01L29/82

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。

    MEMS devices having support structures
    6.
    发明授权
    MEMS devices having support structures 有权
    具有支撑结构的MEMS器件

    公开(公告)号：US07936031B2

    公开(公告)日：2011-05-03

    申请号：US11491490

    申请日：2006-07-21

    申请人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    发明人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    IPC分类号： H01L31/0232

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，可以使用铆钉和柱。 在某些实施方案中，这些支撑结构由诸如金属或氧化物的刚性无机材料形成。 在某些实施例中，还可以沉积蚀刻阻挡层以促进材料在形成相对于MEMS器件内的其它部件不能选择性蚀刻的支撑结构的形成中的使用。

    Electromechanical devices having overlying support structures
    7.
    发明授权
    Electromechanical devices having overlying support structures 有权
    具有上覆支撑结构的机电装置

    公开(公告)号：US07566940B2

    公开(公告)日：2009-07-28

    申请号：US11490880

    申请日：2006-07-21

    申请人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    发明人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC分类号： H01L29/82

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。

    MEMS devices having overlying support structures and methods of fabricating the same
    8.
    发明申请
    MEMS devices having overlying support structures and methods of fabricating the same 有权
    具有上覆支撑结构的MEMS器件及其制造方法

    公开(公告)号：US20070019280A1

    公开(公告)日：2007-01-25

    申请号：US11490880

    申请日：2006-07-21

    申请人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    发明人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC分类号： G02F1/29 ,  G02B6/00

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。

    Methods of fabricating MEMS devices having overlying support structures
    10.
    发明授权
    Methods of fabricating MEMS devices having overlying support structures 有权
    制造具有上覆支撑结构的MEMS装置的方法

    公开(公告)号：US07875485B2

    公开(公告)日：2011-01-25

    申请号：US12510046

    申请日：2009-07-27

    申请人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    发明人： Teruo Sasagawa ,  SuryaPrakash Ganti ,  Mark W. Miles ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC分类号： H01L21/00

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, portions of the rivet structures extend through the movable layer and contact underlying layers. In other embodiments, the material used to form the rigid support structures may also be used to passivate otherwise exposed electrical leads in electrical connection with the MEMS devices, protecting the electrical leads from damage or other interference.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，铆钉结构的部分延伸穿过可移动层并接触下面的层。 在其他实施例中，用于形成刚性支撑结构的材料也可以用于钝化与MEMS装置电连接的其它暴露的电引线，保护电引线免受损坏或其他干扰。