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29 条记录 (耗时 0.027 秒)

    Hesitation free roller
    1.
    发明授权
    Hesitation free roller 失效
    犹豫不决的滚筒

    公开(公告)号：US6003185A

    公开(公告)日：1999-12-21

    申请号：US691450

    申请日：1996-08-01

    申请人： Albert M. Saenz ,  David L. Thrasher ,  Wilbur C. Krusell ,  William G. Drapak

    发明人： Albert M. Saenz ,  David L. Thrasher ,  Wilbur C. Krusell ,  William G. Drapak

    IPC分类号： A47L15/42 ,  B08B11/02 ,  H01L21/00 ,  H01L21/687

    CPC分类号： H01L21/68728 ,  A47L15/42 ,  B08B11/02 ,  H01L21/67046

    摘要： A method and apparatus for rotating wafers in a scrubber, wherein both sides of a wafer are scrubbed without slipping or hesitating. A rotating roller imparts rotary motion to a semiconductor wafer during a cleaning process wherein both sides of a wafer are scrubbed. The rotating roller and wafer contact at their outer edges and the friction between their outer edges causes the wafer to rotate. The roller has an outer edge with a groove. The wafer edge is pinched inside the groove to create enough friction that when cleaning solutions are applied the wafer does not slip and continues to rotate. Also, the groove allows the roller to pinch the wafer just enough so that when the roller reaches the flat of the wafer, the roller may regain the radius of the wafer without hesitating.

    摘要翻译： 一种用于在洗涤器中旋转晶片的方法和装置，其中晶片的两侧被擦洗而没有滑动或犹豫。 在清洁工艺期间，旋转辊将旋转运动提供给半导体晶片，其中清洗晶片的两侧。 在其外边缘处的旋转辊和晶片接触以及它们的外边缘之间的摩擦导致晶片旋转。 辊具有带有凹槽的外边缘。 晶片边缘被夹在凹槽内以产生足够的摩擦力，当施加清洁溶液时，晶片不会滑动并继续旋转。 此外，凹槽允许辊足够地夹紧晶片，使得当辊到达晶片的平面时，辊可以重新获得晶片的半径而不会犹豫。

    Hesitation free roller
    2.
    发明授权
    Hesitation free roller 失效
    犹豫不决的滚筒

    公开(公告)号：US5840129A

    公开(公告)日：1998-11-24

    申请号：US692594

    申请日：1996-08-06

    申请人： Albert M. Saenz ,  David L. Thrasher ,  Wilbur C. Krusell ,  William G. Drapak

    发明人： Albert M. Saenz ,  David L. Thrasher ,  Wilbur C. Krusell ,  William G. Drapak

    IPC分类号： A47L15/42 ,  B08B11/02 ,  H01L21/00 ,  H01L21/687 ,  C03C23/00 ,  A47L15/00 ,  A47L25/00 ,  B08B7/00

    CPC分类号： H01L21/68728 ,  A47L15/42 ,  B08B11/02 ,  H01L21/67046

    摘要： A method and apparatus for rotating wafers in a double sided scrubber without slipping or hesitating. A rotating roller imparts rotary motion to a semiconductor wafer during a double sided cleaning process. The rotating roller and wafer contact at their outer edges and the friction between their outer edges causes the wafer to rotate. The roller has an outer edge with a groove. The wafer edge is pinched inside the groove to create enough friction that when cleaning solutions are applied the wafer does not slip and continues to rotate. Also, the groove allows the roller to pinch the wafer just enough so that when the roller reaches the flat of the wafer, the roller may regain the radius of the wafer without hesitating.

    摘要翻译： 一种用于在双面洗涤器中旋转晶片而不会发生滑动或犹豫的方法和装置。 旋转辊在双面清洁过程中向半导体晶片施加旋转运动。 在其外边缘处的旋转辊和晶片接触以及它们的外边缘之间的摩擦导致晶片旋转。 辊具有带有凹槽的外边缘。 晶片边缘被夹在凹槽内以产生足够的摩擦力，当施加清洁溶液时，晶片不会滑动并继续旋转。 此外，凹槽允许辊足够地夹紧晶片，使得当辊到达晶片的平面时，辊可以重新获得晶片的半径而不会犹豫。

    Megasonic bath
    3.
    发明授权
    Megasonic bath 失效
    超声波浴

    公开(公告)号：US5762084A

    公开(公告)日：1998-06-09

    申请号：US770913

    申请日：1996-12-20

    申请人： Wilbur C. Krusell ,  David L. Thrasher ,  Lynn S. Ryle

    发明人： Wilbur C. Krusell ,  David L. Thrasher ,  Lynn S. Ryle

    IPC分类号： B08B3/12 ,  H01L21/00 ,  B08B3/10

    CPC分类号： H01L21/67057 ,  B08B3/12 ,  H01L21/67046 ,  H01L21/67051 ,  Y10S134/902

    摘要： A megasonic bath with horizontal wafer orientation that may be conveniently interfaced with brush scrub systems. The megasonic transducer creates a sonic energy flow in the direction of the wafers. The sonic energy causes cavitation which loosens and displaces particles from the surface of the wafers. Water jets produce a horizontal flow across the wafer surfaces. The horizontal flow created by the water jets keeps the wafer surfaces wet, exposes the surfaces to fresh chemicals, and removes the particles which have been displaced or loosened by the sonic energy.

    摘要翻译： 具有水平晶片取向的兆声波浴，其可以方便地与刷洗系统接口。 兆声传感器在晶片方向上产生声能量流。 声能引起空化，从晶片表面松动并排出颗粒。 水射流在晶片表面产生横向流动。 由水射流产生的水平流动使晶片表面变湿，将表面暴露于新鲜的化学物质中，并且通过声能除去已被移位或松动的颗粒。

    Apparatus and method for performing end point detection on a linear planarization tool
    4.
    发明授权
    Apparatus and method for performing end point detection on a linear planarization tool 失效
    在线性平面化工具上进行端点检测的装置和方法

    公开(公告)号：US06186865B1

    公开(公告)日：2001-02-13

    申请号：US09182532

    申请日：1998-10-29

    申请人： Brian Thornton ,  Andrew J. Nagengast ,  Robert G. Boehm, Jr. ,  Anil K. Pant ,  Wilbur C. Krusell

    发明人： Brian Thornton ,  Andrew J. Nagengast ,  Robert G. Boehm, Jr. ,  Anil K. Pant ,  Wilbur C. Krusell

    IPC分类号： B24B722

    CPC分类号： B24B37/013 ,  B24B21/08 ,  B24B49/16

    摘要： A technique for utilizing a sensor to monitor fluid pressure from a fluid bearing located under a polishing pad to detect a polishing end point. A sensor is located at the leading edge of a fluid bearing of a linear polisher, which is utilized to perform chemical-mechanical polishing on a semiconductor wafer. The sensor monitors the fluid pressure to detect a change in the fluid pressure during polishing, which change corresponds to a change in the shear force when the polishing transitions from one material layer to the next.

    摘要翻译： 一种利用传感器来监测来自位于抛光垫下方的流体轴承的流体压力以检测抛光终点的技术。 传感器位于线性抛光机的流体轴承的前缘，用于在半导体晶片上执行化学机械抛光。 传感器监测流体压力以检测抛光期间流体压力的变化，该变化对应于当抛光从一个材料层转移到下一个材料层时的剪切力的变化。

    Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF)
    6.
    发明授权
    Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF) 失效
    使用氢氟酸（HF）清洗半导体衬底的方法和设备

    公开(公告)号：US6145148A

    公开(公告)日：2000-11-14

    申请号：US227499

    申请日：1999-01-07

    申请人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

    发明人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

    IPC分类号： A46B11/06 ,  B08B1/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  A46B13/04

    CPC分类号： H01L21/02052 ,  A46B11/06 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  H01L21/31111 ,  H01L21/67046 ,  Y10S134/902

    摘要： A cleaning method and apparatus using very dilute hydrofluoric acid (BF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

    摘要翻译： 一种使用非常稀的氢氟酸（BF）清洗硅晶片和半导体衬底的清洗方法和设备。 将HF输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。 该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。 本发明的方法使用非常稀的HF，并允许蚀刻薄氧化物但不能完全去除以保持亲水表面状态。 因此，本发明提出了一种利用在刷洗涤器上使用PVA刷的原位蚀刻的化学机械清洁方法。 获得非常精确的蚀刻速度控制，因此使该工艺适合于硅片和半导体衬底的多次清洁应用。

    Drip chemical delivery apparatus
    7.
    发明授权
    Drip chemical delivery apparatus 失效
    滴剂输送装置

    公开(公告)号：US5853522A

    公开(公告)日：1998-12-29

    申请号：US688257

    申请日：1996-07-29

    申请人： Wilbur C. Krusell ,  Lane L. Larson

    发明人： Wilbur C. Krusell ,  Lane L. Larson

    IPC分类号： B08B7/00 ,  H01L21/00

    CPC分类号： B08B1/04 ,  H01L21/67046 ,  Y10S134/902

    摘要： A drip chemical delivery system used in semiconductor substrate cleaning processes. A drip chemical delivery system which uses small openings in a pipe (holes) and a low air pressure to saturate the brushes in a double sided brush system. This drip delivery system reduces the volumes of chemical solutions used in a scrubbing process and helps to maintain control of the pH profile of a substrate. This system is described and illustrated in the manner it is used in conjunction with a double sided scrubber.

    摘要翻译： 用于半导体衬底清洗工艺的滴注化学物质输送系统。 滴水化学品输送系统，其在管道（孔）中使用小开口并且具有低空气压力以使双面刷系统中的刷子饱和。 这种滴注递送系统减少了在洗涤过程中使用的化学溶液的体积，并有助于保持对底物pH分布的控制。 该系统以与双面洗涤器结合使用的方式进行描述和说明。

    Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
    9.
    发明授权
    Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher 失效
    用于原位终点检测和使用线性抛光机优化化学机械抛光工艺的方法和装置

    公开(公告)号：US06261155B1

    公开(公告)日：2001-07-17

    申请号：US09527171

    申请日：2000-03-16

    申请人： Rahul Jairath ,  Jiri Pecen ,  Saket Chadda ,  Wilbur C. Krusell ,  Jerauld J. Cutini ,  Erik H. Engdahl

    发明人： Rahul Jairath ,  Jiri Pecen ,  Saket Chadda ,  Wilbur C. Krusell ,  Jerauld J. Cutini ,  Erik H. Engdahl

    IPC分类号： B24B100

    CPC分类号： B24B37/013 ,  B24B21/04 ,  B24B49/04 ,  B24D7/12 ,  H01L22/26

    摘要： A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

    摘要翻译： 用于基材的化学机械抛光（CMP）的线性抛光带包括固定到带上的开口和柔性监测窗，以关闭开口并在带中形成监测通道。 也可以使用多个监视通道。 包括干涉仪的膜厚监视器可以沿着带或者至少部分地设置在由其限制的区域内。 监测通道和膜厚度监测器可用于CMP工艺中以确定CMP工艺的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定跨越衬底表面的去除率变化 基板表面，并优化去除速率和均匀性。