公开(公告)号：US6145148A

公开(公告)日：2000-11-14

申请号：US227499

申请日：1999-01-07

申请人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

发明人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

IPC分类号： A46B11/06 ,  B08B1/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  A46B13/04

CPC分类号： H01L21/02052 ,  A46B11/06 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  H01L21/31111 ,  H01L21/67046 ,  Y10S134/902

摘要： A cleaning method and apparatus using very dilute hydrofluoric acid (BF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

摘要翻译： 一种使用非常稀的氢氟酸（BF）清洗硅晶片和半导体衬底的清洗方法和设备。 将HF输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。 该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。 本发明的方法使用非常稀的HF，并允许蚀刻薄氧化物但不能完全去除以保持亲水表面状态。 因此，本发明提出了一种利用在刷洗涤器上使用PVA刷的原位蚀刻的化学机械清洁方法。 获得非常精确的蚀刻速度控制，因此使该工艺适合于硅片和半导体衬底的多次清洁应用。

公开(公告)号：US5868863A

公开(公告)日：1999-02-09

申请号：US791688

申请日：1997-01-30

申请人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

发明人： Diane J. Hymes ,  Michael Ravkin ,  Xiuhua Zhang ,  Wilbur C. Krusell

IPC分类号： A46B11/06 ,  B08B1/04 ,  B08B3/08 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00

CPC分类号： H01L21/02052 ,  A46B11/06 ,  B08B1/007 ,  B08B1/04 ,  B08B3/08 ,  H01L21/31111 ,  H01L21/67046 ,  Y10S134/902

摘要： A cleaning method and apparatus using very dilute hydrofluoric acid (HF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.

摘要翻译： 一种使用非常稀的氢氟酸（HF）清洗硅晶片和半导体衬底的清洁方法和设备。 将HF输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。 该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。 本发明的方法使用非常稀的HF，并允许蚀刻薄氧化物但不能完全去除以保持亲水表面状态。 因此，本发明提出了一种利用在刷洗涤器上使用PVA刷的原位蚀刻的化学机械清洁方法。 获得非常精确的蚀刻速度控制，因此使该工艺适合于硅片和半导体衬底的多次清洁应用。

公开(公告)号：US06479443B1

公开(公告)日：2002-11-12

申请号：US09568097

申请日：2000-05-09

申请人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

发明人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

IPC分类号： H01L21302

CPC分类号： C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103 ,  H01L21/02074

摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

摘要翻译： 通过将一定量的柠檬酸，一定量的氟化铵和一定量的氟化氢混合在去离子水中形成用于清洁半导体衬底的清洁溶液。 在一个实施方案中，柠檬酸的量在约0.09重量％至约0.11重量％的范围内，氟化铵的量在约0.4重量％至约0.6重量％的范围内， 的氟化氢的含量为约0.09重量％至约0.11重量％，洗涤液的pH为约4.一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液为 与洗涤装置附近的去离子水混合也被描述。

公开(公告)号：US6162301A

公开(公告)日：2000-12-19

申请号：US227029

申请日：1999-01-07

申请人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

发明人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

IPC分类号： C11D1/00 ,  C11D3/02 ,  C11D7/02 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/302 ,  C11D9/04 ,  C23G1/02

CPC分类号： H01L21/02074 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

摘要翻译： 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。 本发明包括在酸性pH环境中结合去离子水，有机化合物和氟化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

公开(公告)号：US06927198B2

公开(公告)日：2005-08-09

申请号：US10639841

申请日：2003-08-12

申请人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

发明人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

IPC分类号： C11D1/00 ,  C11D3/02 ,  C11D7/02 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321

CPC分类号： H01L21/02074 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

摘要翻译： 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。 本发明包括在酸性pH环境中结合去离子水，有机化合物和氟化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

公开(公告)号：US6165956A

公开(公告)日：2000-12-26

申请号：US955393

申请日：1997-10-21

申请人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

发明人： Liming Zhang ,  Yuexing Zhao ,  Diane J. Hymes ,  Wilbur C. Krusell

IPC分类号： C11D1/00 ,  C11D3/02 ,  C11D7/02 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00 ,  C23G1/10 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3205 ,  H01L21/321 ,  C11D9/04 ,  C11D15/00 ,  C11D17/08

CPC分类号： H01L21/02074 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

公开(公告)号：US06593282B1

公开(公告)日：2003-07-15

申请号：US09037586

申请日：1998-03-09

申请人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

发明人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

IPC分类号： C11D1700

CPC分类号： H01L21/02074 ,  C09K13/00 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

摘要翻译： 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。 本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

公开(公告)号：US07135098B2

公开(公告)日：2006-11-14

申请号：US10188227

申请日：2002-07-01

申请人： Diane J. Hymes

发明人： Diane J. Hymes

IPC分类号： C25D17/00

CPC分类号： H01L21/6723 ,  C23C18/1653 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76873 ,  H01L21/76877

摘要： A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

公开(公告)号：US06358847B1

公开(公告)日：2002-03-19

申请号：US09282596

申请日：1999-03-31

申请人： Hugh Li ,  Diane J. Hymes

发明人： Hugh Li ,  Diane J. Hymes

IPC分类号： H01L2144

CPC分类号： H01L24/85 ,  B08B1/04 ,  H01L21/31111 ,  H01L21/32134 ,  H01L24/45 ,  H01L24/48 ,  H01L24/78 ,  H01L2224/0381 ,  H01L2224/05647 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85375 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.

摘要翻译： 描述了一种方法，其包括从表面除去氧化物，然后在氧化物去除的5秒内开始将钝化层施加到表面。 表面可以是可以进一步包括焊盘表面的铜表面。 除去氧化物还可以包括施加包含柠檬酸或盐酸的溶液。 施加钝化层还可以包括施加包含唑族的成员的溶液，其中唑类家族成员还可以包含BTA。 该方法还可以进一步包括在开始应用之后35秒完全施加钝化层。

公开(公告)号：US06294027B1

公开(公告)日：2001-09-25

申请号：US09227494

申请日：1999-01-07

申请人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

发明人： Xu Li ,  Yuexing Zhao ,  Diane J. Hymes ,  John M. de Larios

IPC分类号： B08B100

CPC分类号： H01L21/02074 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  C23G1/103

摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

摘要翻译： 描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。 本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。 这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。