-
公开(公告)号：US20070257191A1
公开(公告)日：2007-11-08
申请号：US11779224
申请日：2007-07-17
IPC分类号： G01N23/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译： 一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个 测试孔具有不同的相应的横向尺寸。 带电粒子的束被引导以照射测试孔。 响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。 作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。
-
公开(公告)号：US20060113471A1
公开(公告)日：2006-06-01
申请号：US11181659
申请日：2005-07-13
IPC分类号： G21K7/00
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
-
公开(公告)号：US07602197B2
公开(公告)日：2009-10-13
申请号：US10560205
申请日：2004-06-07
IPC分类号： G01R31/00 , G01R31/307
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译： 一种用于晶片检查的方法和装置。 该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束 源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。
-
公开(公告)号：US20070057687A1
公开(公告)日：2007-03-15
申请号：US10560205
申请日：2004-06-07
IPC分类号： G01R31/26
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译： 一种用于晶片检查的方法和装置。 该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束 源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。
-
公开(公告)号：US20050200841A1
公开(公告)日：2005-09-15
申请号：US11069491
申请日：2005-02-28
申请人： Christopher Talbot , Chiwoei Lo
发明人： Christopher Talbot , Chiwoei Lo
IPC分类号： G01R31/302 , G01B15/00 , G01N21/00 , G01N23/00 , G01N23/04 , G01N23/225 , G01Q30/04 , G01Q40/02 , G01R1/06 , G01R31/265 , G01R31/305 , H01J37/073 , H01J37/20 , H01J37/22 , H01J37/256 , H01J37/28 , H01L21/66
CPC分类号： H01J37/265 , G06T7/0004 , H01J37/28 , H01J2237/202 , H01J2237/221 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817
摘要： One embodiment of the present invention is a method of detecting defects in a patterned substrate, including: (a) positioning a charged-particle-beam optical column relative to a patterned substrate, the charged-particle-beam optical column having a field of view (FOV) with a substantially uniform resolution over the FOV; (b) operating the charged-particle-beam optical column to acquire images of a region of the patterned substrate lying within the FOV by scanning the charged-particle beam over the patterned substrate; and (c) comparing the acquired images to a reference to identify defects in the patterned substrate.
-
-
-
-
搜索结果
5 条记录 (耗时 0.026 秒)
