公开(公告)号：US08097524B2

公开(公告)日：2012-01-17

申请号：US12352793

申请日：2009-01-13

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： C30B15/14

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

摘要翻译： 一种碳化硅单晶的制造方法。 生长碳化硅单晶。 该晶体的硼浓度小于5×1014cm-3，过渡金属杂质浓度小于5×1014cm-3。 晶体中的固有缺陷被最小化。 内在缺陷包括硅空位或碳空位。 在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到 浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

公开(公告)号：US08803160B2

公开(公告)日：2014-08-12

申请号：US13340192

申请日：2011-12-29

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： H01L29/15

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.

摘要翻译： 一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。 第一接触电极布置在漂移区的前侧。 控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。 第二接触电极布置在漂移区的背面。 漂移区布置成在第一和第二接触电极之间承载载流子。 漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

公开(公告)号：US20090114924A1

公开(公告)日：2009-05-07

申请号：US12352793

申请日：2009-01-13

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： H01L31/0312 ,  C30B15/14 ,  H01L21/02

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

摘要翻译： 一种碳化硅单晶的制造方法。 生长碳化硅单晶。 晶体的硼浓度小于5×10 14 cm -3，过渡金属杂质浓度小于5×10 14 cm -3。 晶体中的固有缺陷被最小化。 内在缺陷包括硅空位或碳空位。 在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到 浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

公开(公告)号：US20120091471A1

公开(公告)日：2012-04-19

申请号：US13340192

申请日：2011-12-29

申请人： Alexandre ELLISON ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre ELLISON ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： H01L29/739 ,  H01L29/24

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.

摘要翻译： 一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。 第一接触电极布置在漂移区的前侧。 控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。 第二接触电极布置在漂移区的背面。 漂移区布置成在第一和第二接触电极之间承载载流子。 漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

公开(公告)号：US07482068B2

公开(公告)日：2009-01-27

申请号：US10526059

申请日：2003-08-22

申请人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Björn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： B32B18/00 ,  C30B23/00 ,  H01L31/0312 ,  H01L29/00 ,  H01L29/30 ,  H01L29/12

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.

摘要翻译： 具有n型或p型导电性的均匀碳化硅单晶。 晶体的净载流子浓度小于1015cm-3，载流子寿命在室温下至少为50ns。

公开(公告)号：US20060137600A1

公开(公告)日：2006-06-29

申请号：US10526059

申请日：2003-08-22

申请人： Alexandre Ellison ,  Bjorn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

发明人： Alexandre Ellison ,  Bjorn Magnusson ,  Asko Vehanen ,  Dietrich Stephani ,  Heinz Mitlehner ,  Peter Friedrichs

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： H01L29/7395 ,  C30B25/00 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/0455 ,  H01L29/1608 ,  H01L29/66068 ,  Y10S438/931

摘要： A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns at room temperature.

摘要翻译： 具有n型或p型导电性的均匀碳化硅单晶。 晶体的净载流子浓度小于10 15 cm -3，载流子寿命在室温下至少为50ns。

公开(公告)号：US07646026B2

公开(公告)日：2010-01-12

申请号：US12088298

申请日：2006-09-19

申请人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schörner ,  Dietrich Stephani

发明人： Peter Friedrichs ,  Dethard Peters ,  Reinhold Schörner ,  Dietrich Stephani

IPC分类号： H01L31/00 ,  H01L31/117

CPC分类号： H01L29/861 ,  H01L29/1608 ,  H01L29/36

摘要： An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.

摘要翻译： 集成的纵向SiC-PN功率二极管具有第一导电类型的高掺杂SiC半导体本体，第一导电类型的低掺杂漂移区，布置在发射极侧的半导体主体上方，具有第二导电性的发射极区 类型，施加到漂移区，以及至少一个第一导电类型的薄中间层。 中间层布置在漂移区内，具有比漂移区更高的掺杂浓度，并将漂移区分成至少一个第一阳极侧漂移区层和至少一个第二阴极侧漂移区层。 还公开了具有这种SiC-PN功率二极管的电路结构。

公开(公告)号：US06316791B1

公开(公告)日：2001-11-13

申请号：US09523158

申请日：2000-02-22

申请人： Reinhold Schörner ,  Dietrich Stephani ,  Dethard Peters ,  Peter Friedrichs

发明人： Reinhold Schörner ,  Dietrich Stephani ,  Dethard Peters ,  Peter Friedrichs

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7813

摘要： A semiconductor structure includes at least one &agr;-silicon carbide region and an electrically insulating region, e.g. made of an oxide layer, and an interface located between them. The selection of an &agr;-silicon carbide polytype having a smaller energy gap than that of the 6H silicon carbide polytype for at least one region near the interface results in a high charge carrier mobility in this region.

摘要翻译： 半导体结构包括至少一个α-碳化硅区域和电绝缘区域，例如， 由氧化物层制成，以及位于它们之间的界面。 对于界面附近的至少一个区域，具有比6H碳化硅多型体更小的能隙的α-碳化硅多型体的选择导致该区域中的高电荷载流子迁移率。

公开(公告)号：US20050062112A1

公开(公告)日：2005-03-24

申请号：US10950027

申请日：2004-09-24

申请人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schorner

发明人： Karl Dohnke ,  Rudolf Elpelt ,  Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schorner

IPC分类号： H01L21/337 ,  H01L21/8232 ,  H01L27/06 ,  H01L27/095 ,  H01L29/06 ,  H01L29/808 ,  H01L29/76

CPC分类号： H01L29/0619 ,  H01L29/8083

摘要： A semi-conductor structure for controlling and switching a current has a switch element and an edge element. The switch element contains a first semi-conductor area of a first conductivity type contacted by way of an anode electrode and a cathode electrode, a depletion area that is arranged inside the first semi-conductor area and that can be influenced by a control voltage applied to the control electrode for the purpose of current control, and an island area of a second conductivity type that is buried inside the first semi-conductor area. The edge element contains an edge area of the second conductivity type that is buried inside the first semi-conductive area and that is formed on a common level with the buried island area, in addition to an edge terminating area of a second conductivity type adjacent the edge area.

摘要翻译： 用于控制和切换电流的半导体结构具有开关元件和边缘元件。 开关元件包含通过阳极电极和阴极电极接触的第一导电类型的第一半导体区域，设置在第一半导体区域内部并且可受施加的控制电压影响的耗尽区域 到控制电极，以及埋在第一半导体区域内的第二导电类型的岛区。 边缘元件除了具有与第二导电类型相邻的第二导电类型的边缘终止区域之外，还包含第二导电类型的边缘区域，该边缘区域被埋在第一半导电区域内并且与掩埋岛区域形成在公共层上 边缘区域。

公开(公告)号：US06693322B2

公开(公告)日：2004-02-17

申请号：US10352731

申请日：2003-01-27

申请人： Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schörner

发明人： Peter Friedrichs ,  Heinz Mitlehner ,  Reinhold Schörner

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/8083 ,  H01L29/8122 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor configuration for current control has an n-type first semiconductor region with a first surface, a p-type covered island region, within the first semiconductor region, with a second surface, an n-type contact region arranged on the second surface within the island region and a lateral channel region, formed between the first and second surface as part of the first semiconductor region. The channel is part of a current path from or to the contact region. The current within the lateral channel region may be influenced by at least one depletion zone. A lateral edge of the lateral channel region extends as far as the contact region.

摘要翻译： 用于电流控制的半导体配置具有在第一半导体区域内具有第一表面，p型覆盖岛状区域的n型第一半导体区域，第二表面，布置在第二表面上的第二表面上的n型接触区域 所述岛区域和横向沟道区域形成在所述第一和第二表面之间，作为所述第一半导体区域的一部分。 通道是从或接触区域的当前路径的一部分。 横向通道区域内的电流可能受到至少一个耗尽区的影响。 横向通道区域的横向边缘延伸到接触区域的最远处。