公开(公告)号：US20130164882A1

公开(公告)日：2013-06-27

申请号：US13337002

申请日：2011-12-23

申请人： Ali Afzali-Ardakani ,  Ageeth A. Bol ,  Mostafa M. EI-Ashry ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan Nistor ,  George S. Tulevski

发明人： Ali Afzali-Ardakani ,  Ageeth A. Bol ,  Mostafa M. EI-Ashry ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan Nistor ,  George S. Tulevski

IPC分类号： H01L31/0352 ,  H01L31/0224

CPC分类号： H01L31/075 ,  H01L31/022466 ,  H01L51/444 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

摘要： Disclosed is a method which includes forming a bottom metallic electrode on an insulating substrate; forming a semiconductor junction on the metallic electrode; forming a transparent conducting overlayer in contact with the semiconductor junction; and forming a metallic layer in contact with the transparent conducting overlayer, wherein the metallic layer is formed by a plating process. The plating process may be an electroplating process or an electroless plating process. The transparent conducting overlayer may be carbon nanotubes or graphene. The semiconductor junction may be a p-i-n semiconductor junction, a p-n semiconductor junction, an n-p semiconductor junction or an n-i-p semiconductor junction.

摘要翻译： 公开了一种在绝缘基板上形成底部金属电极的方法， 在所述金属电极上形成半导体结; 形成与半导体结接触的透明导电覆层; 以及形成与所述透明导电覆盖层接触的金属层，其中所述金属层通过电镀工艺形成。 电镀工艺可以是电镀工艺或无电镀工艺。 透明导电覆层可以是碳纳米管或石墨烯。 半导体结可以是p-i-n半导体结，p-n半导体结，n-p半导体结或n-i-p半导体结。

公开(公告)号：US20120000516A1

公开(公告)日：2012-01-05

申请号：US12828446

申请日：2010-07-01

申请人： Ageeth A. Bol ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan A. Nistor ,  George S. Tulevski

发明人： Ageeth A. Bol ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan A. Nistor ,  George S. Tulevski

IPC分类号： H01L31/0288 ,  H01L31/18 ,  H01L31/0256

CPC分类号： H01L31/022433 ,  H01L31/022491 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.

摘要翻译： 太阳能电池包括半导体部分，设置在半导体部分的第一表面上的石墨烯层和在石墨烯层上图案化的第一导电层，第一导电层包括至少一个汇流条部分和从 所述至少一个汇流条部分。

公开(公告)号：US20120000521A1

公开(公告)日：2012-01-05

申请号：US12828449

申请日：2010-07-01

申请人： Ageeth A. Bol ,  Amal Kasry ,  Marcelo Kuroda ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan A. Nistor ,  George S. Tulevski

发明人： Ageeth A. Bol ,  Amal Kasry ,  Marcelo Kuroda ,  Ahmed Maarouf ,  Glenn J. Martyna ,  Dennis M. Newns ,  Razvan A. Nistor ,  George S. Tulevski

IPC分类号： H01L31/0232

CPC分类号： H01L31/022425 ,  H01L31/02168 ,  H01L31/022466 ,  H01L31/075 ,  H01L31/1884 ,  Y02E10/548

摘要： A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer.

摘要翻译： 太阳能电池包括半导体部分，设置在半导体部分的第一表面上的石墨烯层和在石墨烯层上图案化的第一导电层，第一导电层包括至少一个汇流条部分，多个指状物从 所述至少一个汇流条部分和设置在所述第一导电层上的折射层。

公开(公告)号：US09177688B2

公开(公告)日：2015-11-03

申请号：US13301943

申请日：2011-11-22

申请人： Ageeth A. Bol ,  Bhupesh Chandra ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  George S. Tulevski

发明人： Ageeth A. Bol ,  Bhupesh Chandra ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  George S. Tulevski

IPC分类号： B32B9/00 ,  H01B1/04 ,  C01B31/02 ,  C01B31/04 ,  C23C16/26 ,  H01L51/10 ,  H01L29/16 ,  H01L29/778 ,  H01L29/66 ,  H01L29/786 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/00 ,  H01L51/05 ,  H01L29/06

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  C01B32/182 ,  C01B32/186 ,  C01B32/192 ,  C01B2202/00 ,  C01B2204/00 ,  C23C16/26 ,  H01B1/04 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/0025 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/102 ,  H01L51/105 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/938 ,  Y10T428/30

摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。

公开(公告)号：US20130130037A1

公开(公告)日：2013-05-23

申请号：US13301943

申请日：2011-11-22

申请人： Ageeth A. Bol ,  Bhupesh Chandra ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  George S. Tulevski

发明人： Ageeth A. Bol ,  Bhupesh Chandra ,  Amal Kasry ,  Ahmed Maarouf ,  Glenn J. Martyna ,  George S. Tulevski

IPC分类号： B32B9/04 ,  C23F1/02 ,  B05D1/02 ,  C23C16/26 ,  B05D5/12 ,  B05D3/02 ,  B82Y30/00 ,  B82Y40/00

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/158 ,  C01B32/182 ,  C01B32/186 ,  C01B32/192 ,  C01B2202/00 ,  C01B2204/00 ,  C23C16/26 ,  H01B1/04 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/78618 ,  H01L29/78684 ,  H01L29/78696 ,  H01L51/0025 ,  H01L51/0545 ,  H01L51/0562 ,  H01L51/0566 ,  H01L51/102 ,  H01L51/105 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/938 ,  Y10T428/30

摘要： A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

摘要翻译： 一种纳米管 - 石墨烯复合膜及其形成清洁的纳米管 - 石墨烯混合膜的方法。 该方法包括在衬底上沉积纳米管膜以产生纳米管膜层，从不接触衬底的纳米管膜的表面去除杂质以产生清洁的纳米管膜层，在清洁层上沉积一层石墨烯 的纳米管膜以制造纳米管 - 石墨烯混合膜，并从纳米管 - 石墨烯混合膜的表面除去杂质，以制造清洁的纳米管 - 石墨烯混合膜，其中混合膜具有改善的电性能。 另一种方法包括在金属箔上沉积纳米管膜以产生纳米管膜层，将具有沉积纳米管膜的金属箔放置在化学气相沉积炉中以在纳米管膜上生长石墨烯以形成纳米管 - 石墨烯混合膜， 并将纳米管 - 石墨烯混合膜转移到衬底上。

公开(公告)号：US08395774B2

公开(公告)日：2013-03-12

申请号：US12886908

申请日：2010-09-21

申请人： Ali Afzali ,  Ageeth A. Bol ,  Amal Kasry ,  George S. Tulevski

发明人： Ali Afzali ,  Ageeth A. Bol ,  Amal Kasry ,  George S. Tulevski

IPC分类号： G01N21/00 ,  G01J3/42

CPC分类号： G01N21/553 ,  G01N21/77 ,  G01N2021/7773 ,  G01N2021/7783

摘要： A method of using an optical sensor, the optical sensor comprising a sensing surface comprising graphene layer, the sensing surface located on a substrate, includes determining a first optical absorption spectrum for the graphene layer by a spectrophotometer; adding an analyte, the analyte selected to cause a shift in the first optical absorption spectrum, to the graphene layer; determining a second optical absorption spectrum for the modified graphene layer by a spectrophotometer; determining a shift between the first optical absorption spectrum and the second optical absorption spectrum; and determining a makeup of the analyte based on the determined shift.

摘要翻译： 一种使用光学传感器的方法，所述光学传感器包括感测表面，所述感测表面包括石墨烯层，所述感测表面位于基底上，包括通过分光光度计确定所述石墨烯层的第一光吸收光谱; 添加分析物，所述分析物被选择以引起第一光吸收光谱的偏移到石墨烯层; 通过分光光度计测定改性石墨烯层的第二光吸收光谱; 确定第一光吸收光谱和第二光吸收光谱之间的偏移; 以及基于所确定的移位来确定分析物的组成。

公开(公告)号：US20120069338A1

公开(公告)日：2012-03-22

申请号：US12886908

申请日：2010-09-21

申请人： Ali Afzali ,  Ageeth A. Bol ,  Amal Kasry ,  George S. Tulevski

发明人： Ali Afzali ,  Ageeth A. Bol ,  Amal Kasry ,  George S. Tulevski

IPC分类号： G01N21/00

CPC分类号： G01N21/553 ,  G01N21/77 ,  G01N2021/7773 ,  G01N2021/7783

摘要： A method of using an optical sensor, the optical sensor comprising a sensing surface comprising graphene layer, the sensing surface located on a substrate, includes determining a first optical absorption spectrum for the graphene layer by a spectrophotometer; adding an analyte, the analyte selected to cause a shift in the first optical absorption spectrum, to the graphene layer; determining a second optical absorption spectrum for the modified graphene layer by a spectrophotometer; determining a shift between the first optical absorption spectrum and the second optical absorption spectrum; and determining a makeup of the analyte based on the determined shift.

摘要翻译： 一种使用光学传感器的方法，所述光学传感器包括感测表面，所述感测表面包括石墨烯层，所述感测表面位于基底上，包括通过分光光度计确定所述石墨烯层的第一光吸收光谱; 添加分析物，所述分析物被选择以引起第一光吸收光谱的偏移到石墨烯层; 通过分光光度计测定改性石墨烯层的第二光吸收光谱; 确定第一光吸收光谱和第二光吸收光谱之间的偏移; 以及基于所确定的移位来确定分析物的组成。

公开(公告)号：US08465647B2

公开(公告)日：2013-06-18

申请号：US12636426

申请日：2009-12-11

申请人： Ageeth A. Bol ,  George S. Tulevski

发明人： Ageeth A. Bol ,  George S. Tulevski

IPC分类号： B01D11/00 ,  B01D17/038 ,  C01B31/02

CPC分类号： B01D21/262 ,  B01D17/0217 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/17 ,  C01B32/172 ,  C01B2202/02 ,  Y10S977/845

摘要： A method and system are disclosed for separating single-walled carbon nanotubes from double and multi-walled carbon nanotubes by using the difference in the buoyant density of Single-Walled versus Multi-Walled carbon nanotubes. In one embodiment, the method comprises providing a vessel with first and second solutions. The first solution comprises a quantity of carbon nanotubes, including single-walled carbon nanotubes and double and multi-walled carbon nanotubes. The single walled nanotubes have a first density, the double and multi-walled nanotubes having a second density. The second solution in the vessel has a third density between said first and second densities. The vessel is centrifuged to form first and second layers in the vessel, with the second solution between said first and second layers. The single-walled carbon nanotubes are predominantly in the first layer, and the second and multi-walled carbon nanotubes are predominantly in the second layer.

摘要翻译： 公开了通过使用单壁碳纳米管与多壁碳纳米管的浮力密度的差异来从双层和多壁碳纳米管分离单壁碳纳米管的方法和系统。 在一个实施例中，该方法包括向船舶提供第一和第二解决方案。 第一种解决方案包括一定量的碳纳米管，包括单壁碳纳米管和双层和多壁碳纳米管。 单壁纳米管具有第一密度，双壁和多壁纳米管具有第二密度。 容器中的第二溶液在所述第一和第二密度之间具有第三密度。 将容器离心以在容器中形成第一和第二层，第二溶液在所述第一和第二层之间。 单壁碳纳米管主要位于第一层中，第二层和多壁碳纳米管主要位于第二层。

公开(公告)号：US20110142743A1

公开(公告)日：2011-06-16

申请号：US12636426

申请日：2009-12-11

申请人： Ageeth A. Bol ,  George S. Tulevski

发明人： Ageeth A. Bol ,  George S. Tulevski

IPC分类号： D01F9/12 ,  B01D17/038

CPC分类号： B01D21/262 ,  B01D17/0217 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/17 ,  C01B32/172 ,  C01B2202/02 ,  Y10S977/845

摘要： A method and system are disclosed for separating single-walled carbon nanotubes from double and multi-walled carbon nanotubes by using the difference in the buoyant density of Single-Walled versus Multi-Walled carbon nanotubes. In one embodiment, the method comprises providing a vessel with first and second solutions. The first solution comprises a quantity of carbon nanotubes, including single-walled carbon nanotubes and double and multi-walled carbon nanotubes. The single walled nanotubes have a first density, the double and multi-walled nanotubes having a second density. The second solution in the vessel has a third density between said first and second densities. The vessel is centrifuged to form first and second layers in the vessel, with the second solution between said first and second layers. The single-walled carbon nanotubes are predominantly in the first layer, and the second and multi-walled carbon nanotubes are predominantly in the second layer.

摘要翻译： 公开了通过使用单壁碳纳米管与多壁碳纳米管的浮力密度的差异来从双壁和多壁碳纳米管分离单壁碳纳米管的方法和系统。 在一个实施例中，该方法包括向船舶提供第一和第二解决方案。 第一种解决方案包括一定量的碳纳米管，包括单壁碳纳米管和双层和多壁碳纳米管。 单壁纳米管具有第一密度，双壁和多壁纳米管具有第二密度。 容器中的第二溶液在所述第一和第二密度之间具有第三密度。 将容器离心以在容器中形成第一和第二层，第二溶液在所述第一和第二层之间。 单壁碳纳米管主要位于第一层中，第二层和多壁碳纳米管主要位于第二层。

公开(公告)号：US08647978B1

公开(公告)日：2014-02-11

申请号：US13551962

申请日：2012-07-18

申请人： John A. Ott ,  Ageeth A. Bol

发明人： John A. Ott ,  Ageeth A. Bol

IPC分类号： H01L21/4763

CPC分类号： H01L23/52 ,  H01L21/7682 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53276 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/0001 ,  H01L2924/00

摘要： A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

摘要翻译： 邻近的石墨烯层形成在暴露的侧壁表面和存在于基底表面上的含铜结构的最上表面。 在含铜结构上存在连续的石墨烯层可以减少铜离子的铜氧化和表面扩散，从而提高结构的电迁移能力。 这些益处可以使用石墨烯获得，而不增加含铜结构的电阻。