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公开(公告)号：US11777047B2
公开(公告)日：2023-10-03
申请号：US17664085
申请日：2022-05-19
IPC分类号： H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
CPC分类号： H01L31/0735 , H01L31/0725 , H01L31/1892 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US20180315879A1
公开(公告)日：2018-11-01
申请号：US15964852
申请日：2018-04-27
申请人： Alliance for Sustainable Energy, LLC , THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, A CALIFORNIA CORPORATION
发明人： Nikhil Jain , Myles Aaron Steiner , John Franz Geisz , Emmett Edward Perl , Ryan Matthew France
IPC分类号： H01L31/0725 , H01L31/0735 , H01L31/0352 , H01L31/036
摘要： Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
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公开(公告)号：US12068425B2
公开(公告)日：2024-08-20
申请号：US18454171
申请日：2023-08-23
IPC分类号： H01L31/0735 , H01L31/0725 , H01L31/18 , H02S10/30
CPC分类号： H01L31/0735 , H01L31/0725 , H01L31/1892 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US10991847B2
公开(公告)日：2021-04-27
申请号：US16734994
申请日：2020-01-06
IPC分类号： H01L33/06 , H01L31/0352 , H01L29/207 , H01S5/343 , H01L33/30
摘要： The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
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公开(公告)号：US11367802B2
公开(公告)日：2022-06-21
申请号：US16269848
申请日：2019-02-07
IPC分类号： H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US20190245109A1
公开(公告)日：2019-08-08
申请号：US16269848
申请日：2019-02-07
IPC分类号： H01L31/0735 , H01L31/0725 , H02S10/30
CPC分类号： H01L31/0735 , H01L31/0725 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US10087535B2
公开(公告)日：2018-10-02
申请号：US15078206
申请日：2016-03-23
发明人： Daniel Joseph Friedman , Todd Gregory Deutsch , John A. Turner , Henning Doscher , James Luke Young , Myles Steiner , Ryan Matthew France
摘要： The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.
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公开(公告)号：US11205734B2
公开(公告)日：2021-12-21
申请号：US16283375
申请日：2019-02-22
IPC分类号： H01L31/0687 , H01L31/0304 , H01L31/054
摘要： Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.
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公开(公告)号：US10927466B2
公开(公告)日：2021-02-23
申请号：US15677282
申请日：2017-08-15
发明人： Todd Gregory Deutsch , Myles Aaron Steiner , Daniel Joseph Friedman , James Luke Young , Ryan Matthew France , John A. Turner , Henning Döscher
IPC分类号： C25B11/051 , C30B25/18 , H01L31/0216 , H01L31/0304 , H01L31/18 , C30B29/40 , C25B11/057 , C25B11/075 , C25B1/04 , H01G9/20 , C25B1/55
摘要： An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.
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公开(公告)号：US20190259897A1
公开(公告)日：2019-08-22
申请号：US16283375
申请日：2019-02-22
IPC分类号： H01L31/0687 , H01L31/054 , H01L31/0304
摘要： Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.
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