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公开(公告)号：US11777047B2
公开(公告)日：2023-10-03
申请号：US17664085
申请日：2022-05-19
IPC分类号： H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
CPC分类号： H01L31/0735 , H01L31/0725 , H01L31/1892 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US11764326B2
公开(公告)日：2023-09-19
申请号：US17460829
申请日：2021-08-30
发明人： Kevin Louis Schulte , Myles Aaron Steiner , Daniel Joseph Friedman , Ryan Matthew France , Asegun Henry
IPC分类号： H01L31/18 , H01L31/0687
CPC分类号： H01L31/1844 , H01L31/06875 , H01L31/1892
摘要： The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.
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公开(公告)号：US11680476B2
公开(公告)日：2023-06-20
申请号：US16715877
申请日：2019-12-16
IPC分类号： E21B47/00 , H01L29/778 , E21B47/022 , G01D21/02 , H01L29/267 , H01L29/205 , H01L29/20
CPC分类号： E21B47/00 , E21B47/022 , G01D21/02 , H01L29/7783 , H01L29/7786 , H01L29/2003 , H01L29/205 , H01L29/267
摘要： Disclosed herein are devices, systems and methods useful for downhole sensors and electronics suitable for harsh thermal and mechanical environment associated with high-temperature geothermal drilling and high-temperature/high-pressure oil and gas drilling.
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公开(公告)号：US20180051379A1
公开(公告)日：2018-02-22
申请号：US15677282
申请日：2017-08-15
发明人： Todd Gregory Deutsch , Myles Aaron Steiner , Daniel Joseph Friedman , James Luke Young , Ryan Matthew France , John A. Turner , Henning Döscher
IPC分类号： C25B11/04 , H01L31/0216 , H01L31/0304 , H01L31/18 , C25B1/00 , C25B1/04 , C30B25/18 , C30B29/40
CPC分类号： C25B11/0405 , C25B1/003 , C25B1/04 , C25B11/0415 , C25B11/0447 , C30B25/18 , C30B29/40 , H01G9/205 , H01G9/2077 , H01L31/02167 , H01L31/03046 , H01L31/1844 , H01L31/1868 , Y02E60/366 , Y02P20/135
摘要： An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.
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公开(公告)号：US11367802B2
公开(公告)日：2022-06-21
申请号：US16269848
申请日：2019-02-07
IPC分类号： H01L31/00 , H01L31/0735 , H02S10/30 , H01L31/0725 , H01L31/18
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US20190245109A1
公开(公告)日：2019-08-08
申请号：US16269848
申请日：2019-02-07
IPC分类号： H01L31/0735 , H01L31/0725 , H02S10/30
CPC分类号： H01L31/0735 , H01L31/0725 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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公开(公告)号：US10087535B2
公开(公告)日：2018-10-02
申请号：US15078206
申请日：2016-03-23
发明人： Daniel Joseph Friedman , Todd Gregory Deutsch , John A. Turner , Henning Doscher , James Luke Young , Myles Steiner , Ryan Matthew France
摘要： The present disclosure relates to photoelectrochemical devices and systems for capturing the energy of electromagnetic radiation and utilizing the captured energy for electrolysis to produce hydrogen gas and oxygen gas.
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公开(公告)号：US10927466B2
公开(公告)日：2021-02-23
申请号：US15677282
申请日：2017-08-15
发明人： Todd Gregory Deutsch , Myles Aaron Steiner , Daniel Joseph Friedman , James Luke Young , Ryan Matthew France , John A. Turner , Henning Döscher
IPC分类号： C25B11/051 , C30B25/18 , H01L31/0216 , H01L31/0304 , H01L31/18 , C30B29/40 , C25B11/057 , C25B11/075 , C25B1/04 , H01G9/20 , C25B1/55
摘要： An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.
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公开(公告)号：US12068425B2
公开(公告)日：2024-08-20
申请号：US18454171
申请日：2023-08-23
IPC分类号： H01L31/0735 , H01L31/0725 , H01L31/18 , H02S10/30
CPC分类号： H01L31/0735 , H01L31/0725 , H01L31/1892 , H02S10/30
摘要： The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
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