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公开(公告)号：US09543242B1
公开(公告)日：2017-01-10
申请号：US14823689
申请日：2015-08-11
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L23/31 , H01L25/07
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/071 , H01L2221/68327 , H01L2221/6834 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2924/0002 , H01L2924/15192 , H01L2924/1531 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
摘要翻译： 半导体器件结构和制造半导体器件的方法。 作为非限制性示例，本公开的各个方面提供了包括薄细间距再分布结构的各种半导体封装结构及其制造方法。
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公开(公告)号：US10943858B2
公开(公告)日：2021-03-09
申请号：US16260674
申请日：2019-01-29
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L21/48 , H01L21/683 , H01L23/31 , H01L25/07
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US20190189552A1
公开(公告)日：2019-06-20
申请号：US16260674
申请日：2019-01-29
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L21/683 , H01L23/31 , H01L21/48 , H01L25/07
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/071 , H01L2221/68327 , H01L2221/6834 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2924/0002 , H01L2924/15192 , H01L2924/1531 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US10192816B2
公开(公告)日：2019-01-29
申请号：US15854095
申请日：2017-12-26
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L21/48 , H01L21/683 , H01L23/31 , H01L25/07
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US20180240744A1
公开(公告)日：2018-08-23
申请号：US15854095
申请日：2017-12-26
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L23/31 , H01L25/07 , H01L21/683 , H01L21/48
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/071 , H01L2221/68327 , H01L2221/6834 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2924/0002 , H01L2924/15192 , H01L2924/1531 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US09852976B2
公开(公告)日：2017-12-26
申请号：US15400041
申请日：2017-01-06
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L21/48 , H01L21/683 , H01L23/31 , H01L25/07
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/071 , H01L2221/68327 , H01L2221/6834 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2924/0002 , H01L2924/15192 , H01L2924/1531 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US20170133310A1
公开(公告)日：2017-05-11
申请号：US15400041
申请日：2017-01-06
发明人： Michael Kelly , David Hiner , Ronald Huemoeller , Roger St. Amand
IPC分类号： H01L23/498 , H01L25/07 , H01L21/48 , H01L23/31
CPC分类号： H01L23/49838 , H01L21/4853 , H01L21/486 , H01L21/6835 , H01L23/3121 , H01L23/49811 , H01L23/49816 , H01L23/49822 , H01L23/49827 , H01L25/071 , H01L2221/68327 , H01L2221/6834 , H01L2221/68345 , H01L2221/68377 , H01L2221/68381 , H01L2224/16227 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/92125 , H01L2924/0002 , H01L2924/15192 , H01L2924/1531 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105
摘要： A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
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公开(公告)号：US20150303170A1
公开(公告)日：2015-10-22
申请号：US14255726
申请日：2014-04-17
发明人： Keun Soo Kim , Byoung Jun Ahn , Choon Heung Lee , Jin Young Kim , Dae Byoung Kang , Roger St. Amand
IPC分类号： H01L23/00 , H01L21/56 , H01L21/78 , H01L23/522 , H01L23/31
CPC分类号： H01L21/78 , H01L21/56 , H01L21/561 , H01L21/568 , H01L23/3128 , H01L23/3135 , H01L23/49816 , H01L23/49827 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/95 , H01L2224/131 , H01L2224/13147 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81005 , H01L2224/83005 , H01L2224/83104 , H01L2224/92125 , H01L2224/95 , H01L2224/95001 , H01L2924/15311 , H01L2224/81 , H01L2224/83 , H01L2924/00014 , H01L2924/014
摘要： A singulated substrate for a semiconductor device may include a singulated unit substrate comprising circuit patterns on a top surface and a bottom surface of the singulated unit substrate. A semiconductor die may be bonded to the top surface of the singulated unit substrate. An encapsulation layer may encapsulate the semiconductor die and cover the top surface of the singulated unit substrate. The side surfaces of the singulated unit substrate between the top surface and bottom surface of the singulated unit substrate may be coplanar with side surfaces of the encapsulation layer. The semiconductor die may be electrically coupled to the singulated unit substrate utilizing solder bumps. Solder balls may be formed on the circuit patterns on the bottom surface of the singulated unit substrate. An underfill material may be formed between the semiconductor die and the top surface of the singulated unit substrate.
摘要翻译： 用于半导体器件的单片化衬底可以包括单片化单元衬底，其包括在单个化单元衬底的顶表面和底表面上的电路图案。 半导体管芯可以结合到单个化单元衬底的顶表面。 封装层可以封装半导体管芯并覆盖单个化单元衬底的顶表面。 单片基板的上表面和底表面之间的单个单元基板的侧表面可以与封装层的侧表面共面。 半导体管芯可以使用焊料凸块电耦合到单个化的单元衬底。 焊球可以形成在单片化单元基板的底表面上的电路图案上。 可以在半导体管芯和单个化单元衬底的顶表面之间形成底部填充材料。
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