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公开(公告)号：US11450469B2
公开(公告)日：2022-09-20
申请号：US16553954
申请日：2019-08-28
Applicant: Analog Devices Global Unlimited Company
Inventor： Paul Lambkin , Patrick J. Murphy , Bernard Patrick Stenson , Laurence B. O'Sullivan , Stephen O'Brien , Shane Geary , Baoxing Chen , Sombel Diaham
Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.
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公开(公告)号：US20180130867A1
公开(公告)日：2018-05-10
申请号：US15347724
申请日：2016-11-09
Applicant: Analog Devices Global
Inventor： Paul Lambkin , Michal J. Osiak , Brian Anthony Moane , Stephen O'Brien , Laurence Brendan O'Sullivan , Patrick J. Murphy , Patrick M. McGuinness , Bernard P. Stenson
CPC classification number: H01L28/10 , H01F27/2804 , H01F27/2885 , H01F27/323 , H01F41/041 , H01F41/042 , H01F41/122 , H01F2019/085 , H01F2027/2809 , H01F2027/2819 , H01L23/5227
Abstract: A magnetic isolator is described. The magnetic isolator may comprise a top conductive coil, a bottom conductive coil, and a dielectric layer separating the top conductive coil from the bottom conductive coil. The top conductive coil may comprise an outermost portion having multiple segments. The segments may be configured to reduce the peak electric field in a region of the dielectric layer near the outer edge of the top conductive coil. The top conductive coil may comprise a first lateral segment, and a second lateral segment that is laterally offset with respect to the first lateral segment. The first lateral segment may be closer to the center of the top conductive coil than the second lateral segment, and may be closer to the bottom conductive coil than the second lateral segment. The magnetic isolator may be formed using microfabrication techniques.
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公开(公告)号：US12080460B2
公开(公告)日：2024-09-03
申请号：US17890163
申请日：2022-08-17
Applicant: Analog Devices Global Unlimited Company
Inventor： Paul Lambkin , Patrick J. Murphy , Bernard Patrick Stenson , Laurence B. O'Sullivan , Stephen O'Brien , Shane Geary , Baoxing Chen , Sombel Diaham
CPC classification number: H01F19/08 , H01F2019/085 , H01G2/00 , H04B1/04 , H04B1/16
Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.
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公开(公告)号：US20210065955A1
公开(公告)日：2021-03-04
申请号：US16553954
申请日：2019-08-28
Applicant: Analog Devices Global Unlimited Company
Inventor： Paul Lambkin , Patrick J. Murphy , Bernard Patrick Stenson , Laurence B. O'Sullivan , Stephen O'Brien , Shane Geary , Baoxing Chen , Sombel Diaham
IPC: H01F19/08
Abstract: A micro-isolator is described. The micro-isolator may include a first isolator element, a second isolator element, and a first dielectric material separating the first isolator element from the second isolator element. A second dielectric material may completely or partly encapsulate the second isolator element, or may be present at outer corners of the second isolator element. The second dielectric material may have a larger bandgap than the first dielectric material, and its configuration may reduce electrostatic charge injection into the first dielectric material. The micro-isolator may be formed using microfabrication techniques.
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公开(公告)号：US20200076512A1
公开(公告)日：2020-03-05
申请号：US16287796
申请日：2019-02-27
Applicant: Analog Devices Global Unlimited Company
Inventor： Laurence B. O'Sullivan , Shane Geary , Baoxing Chen , Bernard Patrick Stenson , Paul Lambkin , Patrick M. McGuinness , Stephen O'Brien , Patrick J. Murphy
Abstract: Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single, monolithic substrate are connected in series to achieve a higher amount of electrical isolation for a single substrate than for isolators formed on separate substrates connected in series. Discrete dielectric regions positioned between isolator components forming an isolator provide electrical isolation between the isolator components as well as between the isolators formed on the substrate. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.
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Patent Agency Ranking
公开(公告)号：US10204732B2
公开(公告)日：2019-02-12
申请号：US15179741
申请日：2016-06-10
Applicant: Analog Devices Global
Inventor： Patrick J. Murphy , Stephen O'Brien , Sarah Carroll , Bernard P. Stenson , Conor John Mcloughlin , Michal J. Osiak
IPC: H01F5/00 , H01F27/28 , H01L33/44 , H01L33/62 , H01B3/12 , H01B3/30 , H01B17/62 , H01B19/04 , H01F41/04
Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.
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公开(公告)号：US20170117602A1
公开(公告)日：2017-04-27
申请号：US14922037
申请日：2015-10-23
Applicant: Analog Devices Global
Inventor： Conor John McLoughlin , Michael John Flynn , Laurence B. O'Sullivan , Shane Geary , Stephen O'Brien , Bernard P. Stenson , Baoxing Chen , Sarah Carroll , Michael Morrissey , Patrick M. McGuinness
CPC classification number: H01P1/36 , H01L2224/48137 , H01P5/187
Abstract: An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.
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公开(公告)号：US11044022B2
公开(公告)日：2021-06-22
申请号：US16287796
申请日：2019-02-27
Applicant: Analog Devices Global Unlimited Company
Inventor： Laurence B. O'Sullivan , Shane Geary , Baoxing Chen , Bernard Patrick Stenson , Paul Lambkin , Patrick M. McGuinness , Stephen O'Brien , Patrick J. Murphy
Abstract: Isolators having a back-to-back configuration for providing electrical isolation between two circuits are described, in which multiple isolators formed on a single, monolithic substrate are connected in series to achieve a higher amount of electrical isolation for a single substrate than for isolators formed on separate substrates connected in series. Discrete dielectric regions positioned between isolator components forming an isolator provide electrical isolation between the isolator components as well as between the isolators formed on the substrate. The back-to-back isolator may provide one or more communication channels for transfer of information and/or power between different circuits.
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公开(公告)号：US09941565B2
公开(公告)日：2018-04-10
申请号：US14922037
申请日：2015-10-23
Applicant: Analog Devices Global
Inventor： Conor John McLoughlin , Michael John Flynn , Laurence B. O'Sullivan , Shane Geary , Stephen O'Brien , Bernard P. Stenson , Baoxing Chen , Sarah Carroll , Michael Morrissey , Patrick M. McGuinness
CPC classification number: H01P1/36 , H01L2224/48137 , H01P5/187
Abstract: An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.
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公开(公告)号：US20170117084A1
公开(公告)日：2017-04-27
申请号：US15179741
申请日：2016-06-10
Applicant: Analog Devices Global
Inventor： Patrick J. Murphy , Stephen O'Brien , Sarah Carroll , Bernard P. Stenson , Conor John Mcloughlin , Michal J. Osiak
CPC classification number: H01F27/2804 , H01B3/12 , H01B3/306 , H01B17/62 , H01B19/04 , H01F5/00 , H01F41/041 , H01L33/44 , H01L33/62
Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.
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