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公开(公告)号：US20130171822A1
公开(公告)日：2013-07-04
申请号：US13774350
申请日：2013-02-22
申请人： Anand Chandrashekar , Esther Jeng , Raashina Humayun , Michal Danek , Juwen Gao , Deqi Wang
发明人： Anand Chandrashekar , Esther Jeng , Raashina Humayun , Michal Danek , Juwen Gao , Deqi Wang
IPC分类号： H01L21/768
CPC分类号： H01L21/76879 , C23C16/04 , C23C16/045 , C23C16/06 , H01L21/28556 , H01L21/321 , H01L21/76898 , H01L27/10891
摘要： Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. In certain embodiments, the substrate can be biased during selective inhibition. Process parameters including bias power, exposure time, plasma power, process pressure and plasma chemistry can be used to tune the inhibition profile. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate/wordline fill, and 3-D integration using through-silicon vias.
摘要翻译： 这里描述的是用钨填充特征的方法，以及涉及抑制钨成核的相关系统和装置。 在一些实施方案中，所述方法涉及沿特征轮廓的选择性抑制。 选择性地抑制钨成核的方法可以包括将特征暴露于直接或远程等离子体。 在某些实施方案中，可以在选择性抑制期间衬底被偏置。 可以使用包括偏置功率，曝光时间，等离子体功率，工艺压力和等离子体化学在内的工艺参数来调节抑制曲线。 本文描述的方法可用于填充诸如钨通孔的垂直特征，以及诸如垂直NAND（VNAND）字线的水平特征。 这些方法可以用于适形填充和自下而上/内向外填充。 应用实例包括逻辑和存储器触点填充，DRAM掩埋字线填充，垂直集成存储器栅极/字线填充以及使用硅通孔的3-D集成。
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公开(公告)号：US20130302980A1
公开(公告)日：2013-11-14
申请号：US13851885
申请日：2013-03-27
申请人： Anand Chandrashekar , Esther Jeng , Raashina Humayun , Michal Danek , Juwen Gao , Deqi Wang
发明人： Anand Chandrashekar , Esther Jeng , Raashina Humayun , Michal Danek , Juwen Gao , Deqi Wang
IPC分类号： H01L21/768
CPC分类号： H01L21/76879 , C23C16/045 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32133 , H01L21/32136 , H01L21/7685 , H01L21/76865 , H01L21/76874 , H01L21/76876 , H01L21/76877 , H01L21/76883 , H01L21/76898 , H01L27/1052 , H01L27/10891
摘要： Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).
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3.发明授权公开(公告)号：US08883637B2
公开(公告)日：2014-11-11
申请号：US13536095
申请日：2012-06-28
IPC分类号： H01L21/44 , H01L21/4763 , H01L21/768 , C23C16/04 , H01L21/3213 , H01L21/285
CPC分类号： H01L21/76877 , C23C16/045 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76879
摘要： A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
摘要翻译： 用于填充衬底的凹陷特征的方法包括：a）使用化学气相沉积（CVD）和原子层沉积（ALD）中的至少一种至少部分地用含钨膜填充衬底的凹陷特征; b）在预定温度下，使用包括活性氟物质的蚀刻剂来选择性地蚀刻含钨膜比凹陷特征的下层材料，而不去除凹陷特征底部的所有含钨膜; 以及c）使用CVD和ALD中的至少一种填充所述凹陷特征。
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4.发明申请公开(公告)号：US20130005140A1
公开(公告)日：2013-01-03
申请号：US13536095
申请日：2012-06-28
IPC分类号： H01L21/768 , H01L21/306
CPC分类号： H01L21/76877 , C23C16/045 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76879
摘要： A method for filling a recessed feature of a substrate includes a) at least partially filling a recessed feature of a substrate with tungsten-containing film using at least one of chemical vapor deposition (CVD) and atomic layer deposition (ALD); b) at a predetermined temperature, using an etchant including activated fluorine species to selectively etch the tungsten-containing film more than an underlying material of the recessed feature without removing all of the tungsten-containing film at a bottom of the recessed feature; and c) filling the recessed feature using at least one of CVD and ALD.
摘要翻译： 用于填充衬底的凹陷特征的方法包括：a）使用化学气相沉积（CVD）和原子层沉积（ALD）中的至少一种至少部分地用含钨膜填充衬底的凹陷特征; b）在预定温度下，使用包括活性氟物质的蚀刻剂来选择性地蚀刻含钨膜比凹陷特征的下层材料，而不去除凹陷特征底部的所有含钨膜; 以及c）使用CVD和ALD中的至少一种填充所述凹陷特征。
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公开(公告)号：US09034768B2
公开(公告)日：2015-05-19
申请号：US12833823
申请日：2010-07-09
IPC分类号： H01L21/302 , C23F4/00 , C23C16/04 , C23C16/06 , H01L21/768
CPC分类号： C23F4/00 , C23C16/045 , C23C16/06 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and depositing a tungsten-containing layer on the substrate surface to partially fill one or more high aspect ratio features. The method continues with selective removal of a portion of the deposited layer such that more material is removed near the feature opening than inside the feature. In certain embodiments, removal may be performed at mass-transport limited conditions with less etchant available inside the feature than near its opening. Etchant species are activated before being introduced into the processing chamber and/or while inside the chamber. In specific embodiments, recombination of the activated species is substantially limited and/or controlled during removal, e.g., operation is performed at less than about 250° C. and/or less than about 5 Torr.
摘要翻译： 提供了用含钨材料填充高纵横比特征的方法和装置。 该方法包括提供部分制造的半导体衬底并且在衬底表面上沉积含钨层以部分填充一个或多个高纵横比特征。 该方法继续选择性地去除沉积层的一部分，使得在特征开口附近更多的材料在特征内部被移除。 在某些实施方案中，可以在质量传输限制条件下进行移除，在特征内可用蚀刻剂较少，而不是靠近其开口。 在引入处理室之前和/或在室内时，蚀刻剂物质被激活。 在具体实施方案中，活化物质的重组在去除期间基本上受到限制和/或控制，例如在小于约250℃和/或小于约5托下进行操作。
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6.发明授权Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects 有权用于沉积用于小临界尺寸触点和互连的超薄低电阻率钨膜的方法公开(公告)号：US08623733B2
公开(公告)日：2014-01-07
申请号：US12755259
申请日：2010-04-06
申请人： Feng Chen , Raashina Humayun , Michal Danek , Anand Chandrashekar
发明人： Feng Chen , Raashina Humayun , Michal Danek , Anand Chandrashekar
IPC分类号： H01L21/20
CPC分类号： H01L23/535 , C23C16/0272 , C23C16/045 , C23C16/14 , C23C16/45523 , C23C16/52 , H01L21/28556 , H01L21/67017 , H01L21/76816 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L21/76895 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process.
摘要翻译： 提供了高空隙特征的无空隙钨填充的方法。 根据各种实施方案，该方法包括用钨填充特征的降温化学气相沉积（CVD）工艺。 在某些实施方案中，在化学气相沉积期间将工艺温度保持在小于约350℃以填充该特征。 降低温度的CVD钨填料提供了改进的高纵横比特征的钨填充，为氟迁移到下层提供了改进的障碍，同时获得与标准CVD填充相似的薄膜电阻率。 还提供了沉积具有低电阻率的薄钨膜的方法。 根据各种实施例，所述方法包括在沉积钨体层之前对沉积的成核层进行降低温度的低电阻率处理和/或通过降低温度的CVD工艺沉积体层，然后进行高温CVD工艺。
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公开(公告)号：US08124531B2
公开(公告)日：2012-02-28
申请号：US13016656
申请日：2011-01-28
IPC分类号： H01L21/44
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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8.发明申请METHODS FOR DEPOSITING TUNGSTEN FILMS HAVING LOW RESISTIVITY FOR GAPFILL APPLICATIONS 审中-公开用于沉积具有低电阻率的阻尼薄膜的方法公开(公告)号：US20100144140A1
公开(公告)日：2010-06-10
申请号：US12535377
申请日：2009-08-04
IPC分类号： H01L21/44
CPC分类号： H01L21/76877 , C23C16/045 , C23C16/14 , H01L21/28556
摘要： Methods of filling gaps or recessed features on substrates are provided. According to various embodiments, the methods involve bulk deposition of tungsten to partially fill the feature followed by a removing a top portion of the deposited tungsten. In particular embodiments, the top portion is removed by exposing the substrate to activated fluorine species. By selectively removing sharp and protruding peaks of the deposited tungsten grains, the removal operation polishes the tungsten along the feature sidewall. Multiple deposition-removal cycles can be used to close the feature. The filled feature is less prone to coring during CMP.
摘要翻译： 提供了在基板上填充间隙或凹陷特征的方法。 根据各种实施例，该方法涉及大量沉积钨以部分地填充特征，随后去除沉积的钨的顶部。 在具体实施方案中，通过将底物暴露于活化的氟物质来除去顶部。 通过选择性地去除沉积的钨颗粒的尖锐和突出的峰，去除操作沿着特征侧壁抛光钨。 可以使用多个沉积去除循环来关闭特征。 填充的特征在CMP期间较不容易取芯。
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公开(公告)号：US08435894B2
公开(公告)日：2013-05-07
申请号：US13351970
申请日：2012-01-17
IPC分类号： H01L21/44
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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公开(公告)号：US20120115329A1
公开(公告)日：2012-05-10
申请号：US13351970
申请日：2012-01-17
IPC分类号： H01L21/768
CPC分类号： H01L21/486 , H01L21/28556 , H01L21/32136 , H01L21/76865 , H01L21/76877
摘要： Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials in a substantially void-free manner are provided. In certain embodiments, the method involves depositing an initial layer of a tungsten-containing material followed by selectively removing a portion of the initial layer to form a remaining layer, which is differentially passivated along the depth of the high-aspect ration feature. In certain embodiments, the remaining layer is more passivated near the feature opening than inside the feature. The method may proceed with depositing an additional layer of the same or other material over the remaining layer. The deposition rate during this later deposition operation is slower near the feature opening than inside the features due to the differential passivation of the remaining layer. This deposition variation, in turn, may aid in preventing premature closing of the feature and facilitate filling of the feature in a substantially void free manner.
摘要翻译： 提供了以基本上无空隙的方式用含钨材料填充高纵横比特征的方法和装置。 在某些实施方案中，该方法包括沉积含钨材料的初始层，然后选择性地去除初始层的一部分以形成沿着高纵横比特征的深度差异钝化的剩余层。 在某些实施例中，剩余层在特征开口附近比在特征内更加钝化。 该方法可以继续在剩余层上沉积相同或其它材料的附加层。 由于剩余层的差分钝化，在该后续沉积操作期间的沉积速率在特征开口附近比在特征内部的沉积速率更慢。 这种沉积变化又可以有助于防止特征的过早闭合并且有助于以基本无空隙的方式填充特征。
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