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70 条记录 (耗时 0.031 秒)

    Stand-off pad for supporting a wafer on a substrate support chuck
    1.
    发明授权
    Stand-off pad for supporting a wafer on a substrate support chuck 失效
    用于在基板支撑卡盘上支撑晶片的支撑垫

    公开(公告)号：US06217655B1

    公开(公告)日：2001-04-17

    申请号：US08791941

    申请日：1997-01-31

    申请人： Ananda H. Kumar ,  Shamouil Shamouilian ,  Hyman J. Levinstein ,  Vijay Parkhe

    发明人： Ananda H. Kumar ,  Shamouil Shamouilian ,  Hyman J. Levinstein ,  Vijay Parkhe

    IPC分类号： B05C1300

    CPC分类号： H01L21/6833 ,  H01L21/6875

    摘要： A stand-off pad, and method of fabricating the same, for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer stand-off pad is fabricated of a polymeric material, such as polyimide, which is disposed upon the support surface of the chuck. The stand-off pad maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the stand-off pad. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing and the magnitude of the chucking voltage is maintained between the workpiece and the chuck.

    摘要翻译： 支撑垫及其制造方法，用于以与工件支撑卡盘间隔开的关系支撑工件。 更具体地说，晶片支座由诸如聚酰亚胺的聚合材料制成，其设置在卡盘的支撑表面上。 支座将保持晶片或其它工件与卡盘的支撑表面间隔开。 晶片的下表面和卡盘之间的距离由支座的厚度限定。 该距离应大于可能位于卡盘表面上的污染物颗粒的预期直径。 以这种方式，污染物颗粒在处理期间不粘附到晶片的下侧，并且夹持电压的幅度保持在工件和卡盘之间。

    Method of making electrostatic chuck with conformal insulator film
    2.
    发明授权
    Method of making electrostatic chuck with conformal insulator film 失效
    用保形绝缘膜制作静电卡盘的方法

    公开(公告)号：US5753132A

    公开(公告)日：1998-05-19

    申请号：US725482

    申请日：1996-10-04

    申请人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    发明人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  B44C1/22

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    摘要： A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.

    摘要翻译： 一种用于制造静电卡盘（20）的方法，包括以下步骤：（c）形成具有上表面的基部（80），其中具有冷却槽（85），所述凹槽的尺寸和分布用于将冷却剂保持在其中用于冷却基座; 和（d）通过以下步骤将电绝缘体层（45）施加到基底上的凹槽上：（i）将基底放置在压力成形设备（25）中并将电绝缘体层施加在基底中的凹槽上; 和（ii）将足够高的压力施加到绝缘体层上以使绝缘体层压到沟槽上，以形成与基底上的凹槽保形的基本上连续的电绝缘层。

    Electrostatic chuck with conformal insulator film
    4.
    发明授权
    Electrostatic chuck with conformal insulator film 失效
    带保形绝缘膜的静电吸盘

    公开(公告)号：US5745331A

    公开(公告)日：1998-04-28

    申请号：US381786

    申请日：1995-01-31

    申请人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    发明人： Shamouil Shamouilian ,  Sasson Somekh ,  Hyman J. Levinstein ,  Manoocher Birang ,  Semyon Sherstinsky ,  John F. Cameron

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6831 ,  H01L21/6833 ,  H02N13/00

    摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.

    摘要翻译： 用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂 衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。 基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。 绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中 所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。 优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

    High density plasma process chamber
    8.
    发明授权
    High density plasma process chamber 失效
    高密度等离子体处理室

    公开(公告)号：US6095084A

    公开(公告)日：2000-08-01

    申请号：US893599

    申请日：1997-07-14

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    IPC分类号： C23C16/00

    CPC分类号： C23C16/00

    摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

    摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。

    Multielectrode electrostatic chuck with fuses
    9.
    发明授权
    Multielectrode electrostatic chuck with fuses 失效
    带保险丝的多电极静电卡盘

    公开(公告)号：US5751537A

    公开(公告)日：1998-05-12

    申请号：US641938

    申请日：1996-05-02

    申请人： Ananda H. Kumar ,  Shamouil Shamouilian

    发明人： Ananda H. Kumar ,  Shamouil Shamouilian

    IPC分类号： B23Q3/15 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6833

    摘要： A failure resistant electrostatic chuck 20 for holding a substrate 35 during processing of the substrate 35, is described. The chuck 20 comprises a plurality of electrodes 25 covered by an insulator 30, the electrodes 25 capable of electrostatically holding a substrate 35 when a voltage is applied thereto. An electrical power bus 40 has a plurality of output terminals 45 that conduct voltage to the electrodes 25. Fuses 50 electrically connect the electrodes 25 to the output terminals 45 of the power bus 40, each fuse 50 connecting at least one electrode 25 in series to an output terminal from the power bus 40. The fuses 50 are capable of electrically disconnecting the electrode 25 from the output terminals 45 when the insulator 30 punctures and exposes the electrode 25 to the process environment causing a current to flow through the fuse 50. A current detector 175 and electrical counter 180 can be used to provide early detection and counting of the number of failures of the electrodes 25 by detecting the current discharges through the fuses 50.

    摘要翻译： 描述了用于在基板35的加工期间保持基板35的防破坏静电卡盘20。 卡盘20包括被绝缘体30覆盖的多个电极25，当施加电压时能够静电保持基板35的电极25。 电力总线40具有向电极25传导电压的多个输出端子45.保险丝50将电极25电连接到电力总线40的输出端子45，每个保险丝50将至少一个电极25串联连接到 来自电源总线40的输出端子。当绝缘体30刺穿并将电极25暴露于使电流流过保险丝50的处理环境时，熔断器50能够将电极25与输出端子45电断开。 电流检测器175和电计数器180可以用于通过检测通过保险丝50的电流放电来提供对电极25的故障数量的早期检测和计数。