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11 条记录 (耗时 0.032 秒)

    High density plasma process chamber
    1.
    发明授权
    High density plasma process chamber 失效
    高密度等离子体处理室

    公开(公告)号：US6095084A

    公开(公告)日：2000-08-01

    申请号：US893599

    申请日：1997-07-14

    申请人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    发明人： Shamouil Shamouilian ,  Ananda H. Kumar ,  Arnold Kholodenko ,  Dennis S. Grimard ,  Jonathan D. Mohn ,  Michael G. Chafin ,  Kenneth S. Collins

    IPC分类号： C23C16/00

    CPC分类号： C23C16/00

    摘要： A process chamber 55 for processing a semiconductor substrate 60 in a plasma, comprises a process gas distributor 100 for distributing process gas into a plasma zone 65 in the chamber. An inductor antenna 135 is used to form an inductive plasma from the process gas in the plasma zone. A primary bias electrode 145 on a ceiling 140 of the chamber 55 has a conducting surface 150 exposed to the plasma zone 65. A dielectric member 155 comprising a power electrode 165 embedded therein, has a receiving surface for receiving a substrate 60. A secondary bias electrode 170 below the dielectric member 155 has a conducting surface 175 exposed to the plasma zone 65. An electrode voltage supply 180 maintains the power electrode 165, primary bias electrode 145, and secondary bias electrode 170, at different electrical potentials to provide a high density, highly directional, plasma in the plasma zone 65 of the chamber 55.

    摘要翻译： 用于处理等离子体中的半导体衬底60的处理室55包括用于将处理气体分配到室中的等离子体区65中的处理气体分配器100。 电感天线135用于从等离子体区域中的处理气体形成感应等离子体。 腔室55的天花板140上的主偏压电极145具有暴露于等离子体区域65的导电表面150.包括嵌入其中的功率电极165的电介质构件155具有用于接收衬底60的接收表面。次级偏压 在电介质构件155下方的电极170具有暴露于等离子体区65的导电表面175.电极电压源180​​将功率电极165，初级偏压电极145和次级偏置电极170保持在不同的电位以提供高密度 ，在室55的等离子体区65中的高度方向性的等离子体。

    Multi-purpose processing chamber with removable chamber liner
    3.
    发明授权
    Multi-purpose processing chamber with removable chamber liner 有权
    多用途处理室，带有可拆卸的室衬

    公开(公告)号：US07011039B1

    公开(公告)日：2006-03-14

    申请号：US09611817

    申请日：2000-07-07

    申请人： Jonathan D. Mohn ,  John J. Helmsen ,  Michael Barnes

    发明人： Jonathan D. Mohn ,  John J. Helmsen ,  Michael Barnes

    IPC分类号： H01L21/00

    CPC分类号： H01J37/32834 ,  H01J37/321 ,  H01J37/32477

    摘要： A multi-purpose chamber that can be configured for a variety of processes, including deposition processes and etch processes, for example, by installing one or more removable chamber liners. The multi-purpose chamber provides uniform plasma confinement around a substrate disposed in the chamber for various processing conditions. The multi-purpose chamber also provides efficient and uniform exhaust of processing gas from the chamber.

    摘要翻译： 可以例如通过安装一个或多个可拆卸的室衬套来配置用于各种工艺，包括沉积工艺和蚀刻工艺的多功能室。 多用途室在各种处理条件下，在设置在腔室中的基板周围提供均匀的等离子体约束。 多用途室还提供来自腔室的处理气体的高效均匀排气。

    Plasma reactor inductive coil antenna with flat surface facing the plasma
    5.
    发明授权
    Plasma reactor inductive coil antenna with flat surface facing the plasma 失效
    等离子电抗器感应线圈天线，平面面向等离子体

    公开(公告)号：US06401652B1

    公开(公告)日：2002-06-11

    申请号：US09565568

    申请日：2000-05-04

    申请人： Jonathan D. Mohn ,  Arthur H. Sato ,  Kien Nai Chuc

    发明人： Jonathan D. Mohn ,  Arthur H. Sato ,  Kien Nai Chuc

    IPC分类号： C23C1600

    CPC分类号： H01J37/321 ,  H05H1/46

    摘要： The present invention is embodied in a plasma reactor with an inductive coil antenna facing the reactor chamber in which the windings of the coil antenna have a flattened cross-sectional shape, the flat portion of the winding facing toward the plasma within the reactor. Preferably, the coil antenna is located outside the reactor and faces a ceiling or wall of the reactor chamber. The coil antenna may be a single helical coil winding or multiple concentric spiral windings.

    摘要翻译： 本发明体现在具有面向反应室的电感线圈天线的等离子体反应器中，其中线圈天线的绕组具有扁平的横截面形状，线圈的平坦部分面向反应器内的等离子体。 优选地，线圈天线位于反应器外部并且面向反应室的天花板或壁。 线圈天线​​可以是单个螺旋线圈绕组或多个同心螺旋绕组。

    Treatment of etching chambers using activated cleaning gas
    6.
    发明授权
    Treatment of etching chambers using activated cleaning gas 失效
    使用活性清洁气体处理蚀刻室

    公开(公告)号：US06379575B1

    公开(公告)日：2002-04-30

    申请号：US08955181

    申请日：1997-10-21

    申请人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    发明人： Gerald Zheyao Yin ,  Xue-Yu Qian ,  Patrick L. Leahey ,  Jonathan D. Mohn ,  Waiching Chow ,  Arthur Y. Chen ,  Zhi-Wen Sun ,  Brian K. Hatcher

    IPC分类号： H01L21302

    CPC分类号： C04B41/009 ,  B08B7/0035 ,  C04B41/5346 ,  C04B41/91 ,  C23C16/4405 ,  H01J37/32862 ,  Y10S438/905 ,  C04B41/0027 ,  C04B41/0045 ,  C04B35/00

    摘要： An apparatus 20 and process for treating and conditioning an etching chamber 30, and cleaning a thin, non-homogeneous, etch residue on the walls 45 and components of the etching chamber 30. In the etching step, a substrate 25 is etched in the etching chamber 30 to deposit a thin etch residue layer on the surfaces of the walls and components in the chamber. In the cleaning step, cleaning gas is introduced into a remote chamber 40 adjacent to the etching chamber 30, and microwave or RF energy is applied inside the remote chamber to form an activated cleaning gas. A short burst of activated cleaning gas at a high flow rate is introduced into the etching chamber 30 to clean the etch residue on the walls 45 and components of the etching chamber. The method is particularly useful for cleaning etch residue that is chemically adhered to ceramic surfaces in the chamber, for example surfaces comprising aluminum nitride, boron carbide, boron nitride, diamond, silicon oxide, silicon carbide, silicon nitride, titanium oxide, titanium carbide, yttrium oxide, zirconium oxide, or mixtures thereof.

    摘要翻译： 一种用于处理和调理蚀刻室30以及清洁壁45和蚀刻室30的部件上的薄的非均匀蚀刻残余物的方法20。在蚀刻步骤中，在蚀刻中蚀刻衬底25 室30，以在室中的壁和部件的表面上沉积薄的蚀刻残留层。 在清洁步骤中，将清洁气体引入邻近蚀刻室30的远程室40中，并且在远程室内部施加微波或RF能量以形成活化的清洁气体。 将高速流动的短时间的活性清洁气体引入蚀刻室30中以清洁壁45上的蚀刻残留物和蚀刻室的部件。 该方法特别可用于清洁化学附着在室中的陶瓷表面的蚀刻残渣，例如包括氮化铝，碳化硼，氮化硼，金刚石，氧化硅，碳化硅，氮化硅，氧化钛，碳化钛， 氧化钇，氧化锆或其混合物。