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70 条记录 (耗时 0.031 秒)

    Substrate support tolerant to thermal expansion stresses
    4.
    发明授权
    Substrate support tolerant to thermal expansion stresses 失效
    基材支持耐热膨胀应力

    公开(公告)号：US06583980B1

    公开(公告)日：2003-06-24

    申请号：US09641536

    申请日：2000-08-18

    申请人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    发明人： You Wang ,  Arnold Kholodenko ,  Shamouil Shamouilian ,  Alexander M. Veytser ,  Wing L. Cheng

    IPC分类号： H01G300

    CPC分类号： H01L21/6831

    摘要： A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

    摘要翻译： 用于处理基板25的室30包括支撑件55，其包括至少部分地被电介质60覆盖的电极70，电介质60可透过电磁能。 电极70可以被充电以静电保持衬底25，以将能量耦合到腔室30中的气体，或两者。 支撑件55下方的底座90包括可适于用作热膨胀槽以减少热应力的槽95。

    Plasma chamber support having dual electrodes
    9.
    发明授权
    Plasma chamber support having dual electrodes 有权
    具有双电极的等离子体室支撑

    公开(公告)号：US06478924B1

    公开(公告)日：2002-11-12

    申请号：US09513992

    申请日：2000-03-07

    申请人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    发明人： Shamouil Shamouilian ,  Arnold Kholodenko ,  Kwok Manus Wong ,  Liang-Guo Wang ,  Alexander M. Veytser ,  Dennis S. Grimard

    IPC分类号： H05H100

    CPC分类号： H01J37/32706 ,  H01L21/6833 ,  Y10T279/23

    摘要： A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.

    摘要翻译： 能够处理等离子体中的衬底50的处理室110包括覆盖第一电极220和第二电极230的电介质210，支撑电介质210的导体250以及向第一电极提供RF电压的电压源170 220或电介质210中的第二电极230.第一电极220与处理电极225电容耦合以激励处理室110中的处理气体，并且施加到第二电极230的RF电压电容耦合到导体250并且通过 套环260或第二电极230通过套环260直接电容耦合。

    Electrostatic chuck having a unidirectionally conducting coupler layer
    10.
    发明授权
    Electrostatic chuck having a unidirectionally conducting coupler layer 失效
    静电卡盘具有单向导电的耦合器层

    公开(公告)号：US5801915A

    公开(公告)日：1998-09-01

    申请号：US829711

    申请日：1997-03-28

    申请人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    发明人： Arnold Kholodenko ,  Alexander M. Veytser ,  Shamouil Shamouilian

    IPC分类号： B23Q3/15 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/683 ,  H02N13/00

    CPC分类号： C23C16/45521 ,  C23C16/4586 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T279/23

    摘要： An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

    摘要翻译： 一种用于将衬底（45）保持在具有用于对卡盘（20）充电的电压供应端子（65）的处理室（80）中的静电吸盘（20）。 卡盘包括一个包括至少一个电极（30）的静电部件（25），用于在其上保持基板（45）的电绝缘保持表面（40）和用于向电极提供电荷的电接触表面（48）。 单向导电耦合器层（70）将静电部件的接触表面（48）电耦合到电压供应端子，以基本上仅在从端子到接触表面的单个方向上进行充电。 优选地，具有接合到电极的接触表面（55）的接合面（55）的电连接器（50）和用于电接触电压端子（65）的端子表面（60）用于电耦合 所述单向导电耦合器层（70）连接到所述电压源端子（65）。