公开(公告)号：US07345310B2

公开(公告)日：2008-03-18

申请号：US11315672

申请日：2005-12-22

申请人： Anant K. Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  D. Craig Capell

发明人： Anant K. Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  D. Craig Capell

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  H01L29/1004 ,  H01L29/7325

摘要： A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.

摘要翻译： 双极结型晶体管（BJT）包括第一导电类型的碳化硅（SiC）集电极层，在碳化硅集电极层上的第二导电类型的外延碳化硅基底层和第一导电类型的外延碳化硅发射极台面 在外延碳化硅基底层上。 第一导电类型的外延碳化硅钝化层设置在碳化硅发射极台面外部的外延碳化硅基底层的至少一部分上。 外延碳化硅钝化层可以被配置为在零器件偏置下完全耗尽。 还公开了相关的制造方法。

公开(公告)号：US07304334B2

公开(公告)日：2007-12-04

申请号：US11229474

申请日：2005-09-16

申请人： Anant K. Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  Edward Harold Hurt

发明人： Anant K. Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  Edward Harold Hurt

IPC分类号： H01L29/739 ,  H01L31/00

CPC分类号： H01L29/66068 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/1608 ,  H01L29/732

摘要： Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.

公开(公告)号：US20070145378A1

公开(公告)日：2007-06-28

申请号：US11315672

申请日：2005-12-22

申请人： Anant Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  D. Capell

发明人： Anant Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  D. Capell

IPC分类号： H01L31/0312

CPC分类号： H01L29/1608 ,  H01L29/1004 ,  H01L29/7325

摘要： A bipolar junction transistor (BJT) includes a silicon carbide (SiC) collector layer of first conductivity type, an epitaxial silicon carbide base layer of second conductivity type on the silicon carbide collector layer, and an epitaxial silicon carbide emitter mesa of the first conductivity type on the epitaxial silicon carbide base layer. An epitaxial silicon carbide passivation layer of the first conductivity type is provided on at least a portion of the epitaxial silicon carbide base layer outside the silicon carbide emitter mesa. The epitaxial silicon carbide passivation layer can be configured to fully deplete at zero device bias. Related fabrication methods also are disclosed.

摘要翻译： 双极结型晶体管（BJT）包括第一导电类型的碳化硅（SiC）集电极层，在碳化硅集电极层上的第二导电类型的外延碳化硅基底层和第一导电类型的外延碳化硅发射极台面 在外延碳化硅基底层上。 第一导电类型的外延碳化硅钝化层设置在碳化硅发射极台面外部的外延碳化硅基底层的至少一部分上。 外延碳化硅钝化层可以被配置为在零器件偏置下完全耗尽。 还公开了相关的制造方法。

公开(公告)号：US20070235757A1

公开(公告)日：2007-10-11

申请号：US11229474

申请日：2005-09-16

申请人： Anant Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  Edward Hurt

发明人： Anant Agarwal ,  Sumithra Krishnaswami ,  Sei-Hyung Ryu ,  Edward Hurt

IPC分类号： H01L31/00

CPC分类号： H01L29/66068 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/1608 ,  H01L29/732

摘要： Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emitter region is also provided on the SiC substrate. The epitaxial SiC emitter region has a second conductivity type, different from the first conductivity type. The epitaxial SiC emitter region has first and second portions. The first portion is provided on the SiC substrate and the second portion is provided on the first portion. The second portion has a higher carrier concentration than the first portion. Related methods of fabricating BJTs are also provided herein.

摘要翻译： 提供双极结晶体管（BJT），包括碳化硅（SiC）衬底。 在SiC衬底上设置外延SiC基区。 外延SiC基区具有第一导电类型。 外延SiC发射极区也设置在SiC衬底上。 外延SiC发射极区域具有不同于第一导电类型的第二导电类型。 外延SiC发射极区域具有第一和第二部分。 第一部分设置在SiC衬底上，第二部分设置在第一部分上。 第二部分具有比第一部分更高的载流子浓度。 本文还提供了制造BJT的相关方法。

公开(公告)号：US09515135B2

公开(公告)日：2016-12-06

申请号：US11331325

申请日：2006-01-12

申请人： Sei-Hyung Ryu ,  Anant K. Agarwal ,  Allan Ward

发明人： Sei-Hyung Ryu ,  Anant K. Agarwal ,  Allan Ward

IPC分类号： H01L31/0312 ,  H01L29/06 ,  H01L21/04 ,  H01L23/31 ,  H01L29/66 ,  H01L29/872 ,  H01L29/16

CPC分类号： H01L29/0619 ,  H01L21/0445 ,  H01L23/3192 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer is on the silicon carbide layer, and an organic protective layer is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.

摘要翻译： 用于碳化硅半导体器件的边缘终端结构包括在碳化硅层中的至少部分地围绕碳化硅基结的多个间隔开的同心浮动保护环，浮动保护环上的绝缘层和碳化硅 浮动保护环之间的表面电荷补偿区域与碳化硅层表面相邻。 氮化硅层位于碳化硅层上，有机保护层位于氮化硅层上。 氧化物层可以在氮化硅层和碳化硅层的表面之间。 还公开了形成边缘端接结构的方法。

公开(公告)号：US20130146894A1

公开(公告)日：2013-06-13

申请号：US13323297

申请日：2011-12-12

申请人： Lin Cheng ,  Anant K. Agarwal ,  Sei-Hyung Ryu

发明人： Lin Cheng ,  Anant K. Agarwal ,  Sei-Hyung Ryu

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/24

CPC分类号： H01L29/0688 ,  H01L29/1004 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/66272 ,  H01L29/732

摘要： The present disclosure relates to a bipolar junction transistor (BJT) structure that significantly reduces current crowding while improving the current gain relative to conventional BJTs. The BJT includes a collector, a base region, and an emitter. The base region is formed over the collector and includes at least one extrinsic base region and an intrinsic base region that extends above the at least one extrinsic base region to provide a mesa. The emitter is formed over the mesa. The BJT may be formed from various material systems, such as the silicon carbide (SiC) material system. In one embodiment, the emitter is formed over the mesa such that essentially none of the emitter is formed over the extrinsic base regions. Typically, but not necessarily, the intrinsic base region is directly laterally adjacent the at least one extrinsic base region.

摘要翻译： 本公开涉及一种双极结型晶体管（BJT）结构，其显着地减少了电流拥挤，同时改善了相对于传统BJT的电流增益。 BJT包括集电极，基极区和发射极。 基极区形成在集电极上，并且包括至少一个非本征基极区域和在至少一个外部基极区域上方延伸以提供台面的本征基极区域。 发射极形成在台面上。 BJT可以由诸如碳化硅（SiC）材料体系的各种材料体系形成。 在一个实施例中，发射极形成在台面之上，使得基本上在外部基极区域上不形成发射极。 通常但不一定，本征基区直接横向邻近于至少一个外在基区。

公开(公告)号：US08710510B2

公开(公告)日：2014-04-29

申请号：US11764492

申请日：2007-06-18

申请人： Qingchun Zhang ,  Sei-Hyung Ryu ,  Charlotte Jonas ,  Anant K. Agarwal

发明人： Qingchun Zhang ,  Sei-Hyung Ryu ,  Charlotte Jonas ,  Anant K. Agarwal

IPC分类号： H01L31/0312

CPC分类号： H01L29/66068 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/046 ,  H01L21/049 ,  H01L21/2254 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66333 ,  H01L29/7395

摘要： An insulated gate bipolar transistor (IGBT) includes a substrate having a first conductivity type, a drift layer having a second conductivity type opposite the first conductivity type, and a well region in the drift layer and having the first conductivity type. An epitaxial channel adjustment layer is on the drift layer and has the second conductivity type. An emitter region extends from a surface of the epitaxial channel adjustment layer through the epitaxial channel adjustment layer and into the well region. The emitter region has the second conductivity type and at least partially defines a channel region in the well region adjacent to the emitter region. A gate oxide layer is on the channel region, and a gate is on the gate oxide layer. Related methods are also disclosed.

摘要翻译： 绝缘栅双极晶体管（IGBT）包括具有第一导电类型的衬底，具有与第一导电类型相反的第二导电类型的漂移层以及漂移层中具有第一导电类型的阱区。 外延沟道调整层位于漂移层上，具有第二导电类型。 发射极区从外延沟道调节层的表面延伸穿过外延沟道调节层并进入阱区。 发射极区域具有第二导电类型，并且至少部分地限定与发射极区域相邻的阱区域中的沟道区域。 栅极氧化层位于沟道区上，栅极位于栅极氧化层上。 还公开了相关方法。

公开(公告)号：US08124480B2

公开(公告)日：2012-02-28

申请号：US12950410

申请日：2010-11-19

申请人： Sei-Hyung Ryu ,  Anant K. Agarwal

发明人： Sei-Hyung Ryu ,  Anant K. Agarwal

IPC分类号： H01L21/336

CPC分类号： H01L29/1608 ,  H01L29/0619

摘要： Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.

摘要翻译： 用于碳化硅器件的边缘终端在碳化硅层中具有与碳化硅基半导体结相邻并间隔开的多个同心浮动保护环。 在浮动保护环上设置绝缘层，例如氧化物，并且在浮动保护环之间提供碳化硅表面电荷补偿区，并且与绝缘层相邻。 还提供了制造这种边缘终止的方法。

公开(公告)号：US07842549B2

公开(公告)日：2010-11-30

申请号：US12195700

申请日：2008-08-21

申请人： Sei-Hyung Ryu ,  Anant K. Agarwal

发明人： Sei-Hyung Ryu ,  Anant K. Agarwal

IPC分类号： H01L21/00

CPC分类号： H01L29/1608 ,  H01L29/0619

摘要： Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.

摘要翻译： 用于碳化硅器件的边缘终端在碳化硅层中具有与碳化硅基半导体结相邻并间隔开的多个同心浮动保护环。 在浮动保护环上设置绝缘层，例如氧化物，并且在浮动保护环之间提供碳化硅表面电荷补偿区，并且与绝缘层相邻。 还提供了制造这种边缘终止的方法。

公开(公告)号：US07419877B2

公开(公告)日：2008-09-02

申请号：US11268789

申请日：2005-11-08

申请人： Sei-Hyung Ryu ,  Anant K. Agarwal

发明人： Sei-Hyung Ryu ,  Anant K. Agarwal

IPC分类号： H01L21/336

CPC分类号： H01L29/1608 ,  H01L29/0619

摘要： Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.

摘要翻译： 用于碳化硅器件的边缘终端在碳化硅层中具有与碳化硅基半导体结相邻并间隔开的多个同心浮动保护环。 在浮动保护环上设置绝缘层，例如氧化物，并且在浮动保护环之间提供碳化硅表面电荷补偿区，并且与绝缘层相邻。 还提供了制造这种边缘终止的方法。