利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.033 秒)

    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY
    3.
    发明申请
    APPLICATIONS OF SEMICONDUCTOR NANO-SIZED PARTICLES FOR PHOTOLITHOGRAPHY 审中-公开
    半导体纳米尺寸颗粒的应用于光刻机

    公开(公告)号：US20110281221A1

    公开(公告)日：2011-11-17

    申请号：US13189143

    申请日：2011-07-22

    申请人： Zhiyun Chen ,  Erin F. Fleet ,  Gregory D. Cooper

    发明人： Zhiyun Chen ,  Erin F. Fleet ,  Gregory D. Cooper

    IPC分类号： G03F7/26 ,  B82Y30/00

    CPC分类号： G03F7/2041 ,  B82Y30/00 ,  G03F1/62 ,  G03F7/004 ,  G03F7/091 ,  G03F7/2002

    摘要： Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

    摘要翻译： 半导体纳米尺寸颗粒具有独特的光学性质，使其成为UV光刻技术中各种应用的理想选择。 在该专利中，描述了包括在浸没式光刻中使用半导体纳米尺寸颗粒或含半导体纳米尺寸颗粒的材料作为高折射介质的几种这样的应用，作为光学中的抗反射涂层，光刻中的防护薄膜和在UV光致抗蚀剂中的敏化剂 。

    ADVANCED LIGHT EXTRACTION STRUCTURE
    6.
    发明申请
    ADVANCED LIGHT EXTRACTION STRUCTURE 审中-公开
    先进的光提取结构

    公开(公告)号：US20150380688A1

    公开(公告)日：2015-12-31

    申请号：US14120419

    申请日：2013-07-08

    申请人： Zhiyun Chen ,  Gregory D. Cooper

    发明人： Zhiyun Chen ,  Gregory D. Cooper

    IPC分类号： H01L51/52 ,  H01L27/32

    CPC分类号： H01L51/5275 ,  H01L27/3211 ,  H01L27/3244

    摘要： Preparation of semiconductor nanocrystals and their dispersions in solvents and other media is described. The nanocrystals described herein have small (1-10 nm) particle size with minimal aggregation and can be synthesized with high yield. The capping agents on the as-synthesized nanocrystals as well as nanocrystals which have undergone cap exchange reactions result in the formation of stable suspensions in polar and nonpolar solvents which may then result in the formation of high quality nanocomposite films.

    摘要翻译： 描述了半导体纳米晶体及其在溶剂和其它介质中的分散体的制备。 本文所述的纳米晶体具有小（1-10nm）的粒度，具有最小的聚集，并且可以高产率合成。 在合成后的纳米晶体上的封端剂以及经历了帽交换反应的纳米晶体导致在极性和非极性溶剂中形成稳定的悬浮液，这可能导致形成高质量的纳米复合膜。

    Methods for transferring a two-dimensional programmable exposure pattern for photolithography
    10.
    发明授权
    Methods for transferring a two-dimensional programmable exposure pattern for photolithography 失效
    用于转印用于光刻的二维可编程曝光图案的方法

    公开(公告)号：US06291110B1

    公开(公告)日：2001-09-18

    申请号：US09066979

    申请日：1998-04-28

    申请人： Gregory D. Cooper ,  Richard M. Mohring

    发明人： Gregory D. Cooper ,  Richard M. Mohring

    IPC分类号： G03F900

    CPC分类号： G03F7/70375 ,  G03F7/70291

    摘要： The present invention overcomes many of the disadvantages of prior lithographic microfabrication processes while providing further improvements that can significantly enhance the ability to make more complicated semiconductor chips at lower cost. A new type of programmable structure for exposing a wafer allows the lithographic pattern to be changed under electronic control. This provides great flexibility, increasing the throughput and decreasing the cost of chip manufacture and providing numerous other advantages. The programmable structure consists of an array of shutters that can be programmed to either transmit light to the wafer (referred to as its “open” state) or not transmit light to the wafer (referred to as its “closed” state). The programmable structure can comprise or include an array of selective amplifiers. Thus, each selective amplifier is programmed to either amplify light (somewhat analogous to the “open” or “transparent” state of a shutter) or be “non-amplifying” (its “closed” or “opaque” state). In the non-amplifying state, some portion of the incident light is transmitted through the amplifier material. The shutters and selective amplifiers can work in tandem to form a “programmable layer”. A programmable technique is provided for creating a pattern to be imaged onto a wafer that can be implemented as a viable production technique. Thus, the present invention also provides a technique of making integrated circuits. A diffraction limiter can be used to provide certain advantages associated with contact lithography without requiring some of the disadvantages of contact lithography.

    摘要翻译： 本发明克服了现有的平版印刷微细加工工艺的许多缺点，同时提供了可以以更低成本显着提高制造更复杂的半导体芯片的能力的进一步改进。 用于曝光晶片的新型可编程结构允许在电子控制下改变光刻图案。 这提供了极大的灵活性，增加了生产量并且降低了芯片制造的成本并且提供了许多其他优点。 可编程结构由一组快门组成，可以被编程为将光传输到晶片（称为其“打开”状态）或不将光传输到晶片（称为其“关闭”状态））。 可编程结构可以包括或包括选择放大器的阵列。 因此，每个选择放大器被编程为放大光（有点类似于快门的“打开”或“透明”状态）或者是“非放大”（其“闭合”或“不透明”状态））。 在非放大状态下，入射光的一部分透过放大器材料。 快门和选择放大器可以串联工作以形成“可编程层”。 提供了一种可编程技术，用于创建可被实现为可行的生产技术的要被成像到晶片上的图案。 因此，本发明还提供了制造集成电路的技术。 衍射限制器可以用于提供与接触光刻相关联的某些优点，而不需要接触光刻的一些缺点。