Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes)
    4.
    发明授权
    Preparation and use of EXO-2-fluoroalkyl(bicyclo[2.2.1] hept-5-enes) 失效
    EXO-2-氟烷基(双环[2.2.1]庚-5-烯)的制备和用途

    公开(公告)号:US06875555B1

    公开(公告)日:2005-04-05

    申请号:US10664303

    申请日:2003-09-16

    摘要: There is disclosed a composition comprising a mixture of endo- and exo-2-(bicyclo[2.2.1]hept-5-en-2-yl)-2,2-fluoroalkyl-ethan-2-ol which is rich in the exo isomer, preferably the endo/exo concentration ratio is no greater than 5/95. The composition is useful for forming a repeat unit of a polymer which polymer may further comprise additional repeat units derived-from tert-butyl acrylate, hydroxyadamantyl acrylate, protected or unprotected fluorinated-olefins, 2-methyl-2-adamantyl acrylate, 2-propenoic acid, 2-hydroxy-1,1,2-trimethylpropyl ester. Polymers of this invention are useful as the binder component of a photoresist composition for microlithography.

    摘要翻译: 公开了一种组合物,其包含内 - 和外-2-(二环[2.2.1]庚-5-烯-2-基)-2,2-氟烷基 - 乙-2-醇的混合物,其富含 外异构体,优选内/外浓度比不大于5/95。 该组合物可用于形成聚合物的重复单元,该聚合物可以进一步包含衍生自丙烯酸叔丁酯,丙烯酸羟基金刚烷基酯,被保护或未保护的氟化烯烃,丙烯酸2-甲基-2-金刚烷基酯,2-丙烯酸 酸,2-羟基-1,1,2-三甲基丙酯。 本发明的聚合物可用作微光刻用光致抗蚀剂组合物的粘合剂组分。

    Photoresists, polymers and processes for microlithography
    9.
    发明授权
    Photoresists, polymers and processes for microlithography 有权
    光刻胶,聚合物和微光刻工艺

    公开(公告)号:US06593058B1

    公开(公告)日:2003-07-15

    申请号:US09806096

    申请日:2001-03-23

    IPC分类号: G03C173

    摘要: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresist comprise a fluorine-containing copolymer comprising a repeat unit derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group selected from the group consisting of fluorine atom, perfluoroalkyl group, and perfluoroalkoxy group, characterized in that the at least one atom or group is covalently attached to a carbon atom which is contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one coralently attached carbon atom. The photoresists have high transparency in the extreme/far UV as well as the near UV, high plasma etch resistance, and are useful for microlithography in the extreme, far, and near ultraviolet (UV) region, particularly at wavelengths ≦365 nm. Novel fluorine-containing copolymers are also disclosed.

    摘要翻译: 公开了在极端的,远的和近的紫外线下的微光刻的光致抗蚀剂和相关的工艺。 在一些实施方案中,光致抗蚀剂包含(a)包含衍生自至少一种烯键式不饱和化合物的重复单元的含氟共聚物,其特征在于至少一种烯属不饱和化合物是多环的,并且至少一种烯属不饱和化合物含有至少一个氟原子 共价连接到烯属不饱和碳原子上; 和(b)至少一种光活性组分。 在其它实施方案中,光致抗蚀剂包含含有共聚物的含氟共聚物,该共聚物包含衍生自至少一种具有至少一个选自氟原子,全氟烷基和全氟烷氧基的原子或基团的多环烯属不饱和化合物的重复单元,其特征在于 所述至少一个原子或基团共价连接到环结构中包含的碳原子,并且通过至少一个正确连接的碳原子与烯属不饱和化合物的每个烯属不饱和碳原子分离。 光致抗蚀剂在极端/远紫外线以及近紫外线,高等离子体蚀刻电阻方面具有高透明度,并且可用于极端,远紫外(UV)区域,特别是在波长<= 365nm处的微光刻。 还公开了新的含氟共聚物。

    Photoresists, polymers and processes for microlithography
    10.
    发明授权
    Photoresists, polymers and processes for microlithography 有权
    光刻胶,聚合物和微光刻工艺

    公开(公告)号:US07276323B2

    公开(公告)日:2007-10-02

    申请号:US10437760

    申请日:2003-05-14

    摘要: Photoresists and associated processes for microlithography in the extreme, far, and near UV are disclosed. The photoresists in some embodiments comprise (a) a fluorine-containing copolymer comprising a repeat unit derived from at least one ethylenically unsaturated compound characterized in that at least one ethylenically unsaturated compound is polycyclic and at least one ethylenically unsaturated compound contains at least one fluorine atom covalently attached to an ethylenically unsaturated carbon atom; and (b) at least one photoactive component. In other embodiments, the photoresists comprise a fluorine-containing copolymer comprising a repeat unit derived from at least one polycyclic ethylenically unsaturated compound having at least one atom or group selected from the group consisting of fluorine atom, perfluoroalkyl group, and perfluoroalkoxy group, characterized in that the at least one atom or group is covalently attached to a carbon atom which is contained within a ring structure and separated from each ethylenically unsaturated carbon atom of the ethylenically unsaturated compound by at least one covalently attached carbon atom. The photoresists have high transparency in the extreme/far UV as well as the near UV, high plasma etch resistance, and are useful for microlithography in the extreme, far, and near ultraviolet (UV) region, particularly at wavelengths ≦365 nm. Novel fluorine-containing copolymers are also disclosed.

    摘要翻译: 公开了在极端的,远的和近的紫外线下的微光刻的光致抗蚀剂和相关的工艺。 在一些实施方案中,光致抗蚀剂包含(a)包含衍生自至少一种烯键式不饱和化合物的重复单元的含氟共聚物,其特征在于至少一种烯属不饱和化合物是多环的,并且至少一种烯属不饱和化合物含有至少一个氟原子 共价连接到烯键式不饱和碳原子上; 和(b)至少一种光活性组分。 在其它实施方案中,光致抗蚀剂包括含有共聚物的含氟共聚物,该共聚物包含衍生自至少一种具有至少一个选自氟原子,全氟烷基和全氟烷氧基的原子或基团的多环烯键式不饱和化合物的重复单元,其特征在于 所述至少一个原子或基团共价连接到环状结构中包含的碳原子,并且通过至少一个共价连接的碳原子与烯属不饱和化合物的每个烯属不饱和碳原子分离。 光致抗蚀剂在极端/远紫外线以及近紫外线,高等离子体蚀刻电阻方面具有高透明度,并且可用于极端,远紫外(UV)区域,特别是在波长<= 365nm处的微光刻。 还公开了新的含氟共聚物。